DE3782605D1 - Herstellungsverfahren von halbleiterschichten aus amorphem silizium durch thermische zersetzung von dihalosilanen. - Google Patents

Herstellungsverfahren von halbleiterschichten aus amorphem silizium durch thermische zersetzung von dihalosilanen.

Info

Publication number
DE3782605D1
DE3782605D1 DE8787308751T DE3782605T DE3782605D1 DE 3782605 D1 DE3782605 D1 DE 3782605D1 DE 8787308751 T DE8787308751 T DE 8787308751T DE 3782605 T DE3782605 T DE 3782605T DE 3782605 D1 DE3782605 D1 DE 3782605D1
Authority
DE
Germany
Prior art keywords
amorphemic
dihalosilanes
silicon
production method
semiconductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787308751T
Other languages
English (en)
Other versions
DE3782605T2 (de
Inventor
Kenneth George Sharp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE3782605D1 publication Critical patent/DE3782605D1/de
Publication of DE3782605T2 publication Critical patent/DE3782605T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8787308751T 1986-10-03 1987-10-02 Herstellungsverfahren von halbleiterschichten aus amorphem silizium durch thermische zersetzung von dihalosilanen. Expired - Fee Related DE3782605T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91489886A 1986-10-03 1986-10-03

Publications (2)

Publication Number Publication Date
DE3782605D1 true DE3782605D1 (de) 1992-12-17
DE3782605T2 DE3782605T2 (de) 1993-05-13

Family

ID=25434927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787308751T Expired - Fee Related DE3782605T2 (de) 1986-10-03 1987-10-02 Herstellungsverfahren von halbleiterschichten aus amorphem silizium durch thermische zersetzung von dihalosilanen.

Country Status (6)

Country Link
EP (1) EP0262980B1 (de)
JP (1) JPS6395617A (de)
KR (1) KR960006683B1 (de)
CA (1) CA1335950C (de)
DE (1) DE3782605T2 (de)
ES (1) ES2008897A6 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190283A (ja) * 1989-12-20 1991-08-20 Sanyo Electric Co Ltd 光起電力装置の形成方法
JPH1116838A (ja) * 1997-06-24 1999-01-22 Nec Corp 多結晶シリコン膜の成長方法およびｃｖｄ装置
KR100933503B1 (ko) * 2007-10-24 2009-12-23 연세대학교 산학협력단 비정질 실리콘박막의 제조방법
KR101135898B1 (ko) 2007-12-05 2012-04-13 삼성전자주식회사 리모트 컨트롤러 및 그 제어방법과 이를 가지는영상처리장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465474A (en) * 1977-11-04 1979-05-26 Kokusai Electric Co Ltd Method of growing silicon membrane in gas phase
US4409605A (en) * 1978-03-16 1983-10-11 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS58219732A (ja) * 1982-06-16 1983-12-21 Tokyo Inst Of Technol フツ素含有アモルフアス半導体の製造方法
JPS6057617A (ja) * 1984-04-16 1985-04-03 Shunpei Yamazaki 半導体装置作製方法
JPH0650727B2 (ja) * 1985-03-14 1994-06-29 三井東圧化学株式会社 半導体薄膜

Also Published As

Publication number Publication date
KR960006683B1 (ko) 1996-05-22
EP0262980B1 (de) 1992-11-11
DE3782605T2 (de) 1993-05-13
CA1335950C (en) 1995-06-20
EP0262980A3 (en) 1989-01-25
JPS6395617A (ja) 1988-04-26
EP0262980A2 (de) 1988-04-06
ES2008897A6 (es) 1989-08-16
KR880005659A (ko) 1988-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee