DE3750127D1 - Verfahren zur Herstellung eines dünnen Filmes durch Aufstäuben und Aufstäubvorrichtung vom Typ eines gegenüberliegenden Targets. - Google Patents

Verfahren zur Herstellung eines dünnen Filmes durch Aufstäuben und Aufstäubvorrichtung vom Typ eines gegenüberliegenden Targets.

Info

Publication number
DE3750127D1
DE3750127D1 DE3750127T DE3750127T DE3750127D1 DE 3750127 D1 DE3750127 D1 DE 3750127D1 DE 3750127 T DE3750127 T DE 3750127T DE 3750127 T DE3750127 T DE 3750127T DE 3750127 D1 DE3750127 D1 DE 3750127D1
Authority
DE
Germany
Prior art keywords
sputtering
producing
thin film
target type
opposing target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750127T
Other languages
English (en)
Other versions
DE3750127T2 (de
Inventor
Sadao Kadokura
Kazuhiko Honjyo
Akio Kusuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Application granted granted Critical
Publication of DE3750127D1 publication Critical patent/DE3750127D1/de
Publication of DE3750127T2 publication Critical patent/DE3750127T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
DE3750127T 1986-12-26 1987-12-22 Verfahren zur Herstellung eines dünnen Filmes durch Aufstäuben und Aufstäubvorrichtung vom Typ eines gegenüberliegenden Targets. Expired - Fee Related DE3750127T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30851786 1986-12-26

Publications (2)

Publication Number Publication Date
DE3750127D1 true DE3750127D1 (de) 1994-07-28
DE3750127T2 DE3750127T2 (de) 1994-10-13

Family

ID=17981976

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750127T Expired - Fee Related DE3750127T2 (de) 1986-12-26 1987-12-22 Verfahren zur Herstellung eines dünnen Filmes durch Aufstäuben und Aufstäubvorrichtung vom Typ eines gegenüberliegenden Targets.

Country Status (5)

Country Link
US (1) US4784739A (de)
EP (1) EP0273685B1 (de)
JP (1) JPS63270461A (de)
CA (1) CA1325792C (de)
DE (1) DE3750127T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
KR970002340B1 (ko) * 1988-07-15 1997-03-03 미쓰비시 가세이 가부시끼가이샤 자기 기록 매체의 제조방법
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
JP2535410B2 (ja) * 1989-06-16 1996-09-18 帝人株式会社 磁気記録媒体及びその製造方法
JP2613294B2 (ja) * 1989-07-24 1997-05-21 帝人株式会社 薄膜形成方法
ATE140040T1 (de) * 1991-04-12 1996-07-15 Nissin Electric Co Ltd Verfahren zur erzeugung eines metallfilms sowie durch einen aluminiumfilm beschichtetes erzeugnis
TW271490B (de) * 1993-05-05 1996-03-01 Varian Associates
US6068742A (en) * 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
JP3886209B2 (ja) * 1997-06-02 2007-02-28 貞夫 門倉 対向ターゲット式スパッタ装置
US6545580B2 (en) 1998-09-09 2003-04-08 Veeco Instruments, Inc. Electromagnetic field generator and method of operation
US7041204B1 (en) * 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
JP4097893B2 (ja) 2000-12-05 2008-06-11 株式会社エフ・ティ・エスコーポレーション 対向ターゲット式スパッタ方法及び導電性膜の形成方法
US7294283B2 (en) * 2001-04-20 2007-11-13 Applied Process Technologies, Inc. Penning discharge plasma source
WO2002086185A1 (en) 2001-04-20 2002-10-31 Applied Process Technologies Penning discharge plasma source
JP3955744B2 (ja) 2001-05-14 2007-08-08 淳二 城戸 有機薄膜素子の製造方法
JP4563629B2 (ja) 2001-11-19 2010-10-13 株式会社エフ・ティ・エスコーポレーション 対向ターゲット式スパッタ装置
US20040129559A1 (en) * 2002-04-12 2004-07-08 Misner Josh W. Diffusion bonded assemblies and fabrication methods
US7625633B2 (en) * 2003-03-25 2009-12-01 Shin-Etsu Polymer., Ltd. Electromagnetic noise suppressor, article with electromagnetic noise suppressing function, and their manufacturing methods
JP3897724B2 (ja) * 2003-03-31 2007-03-28 独立行政法人科学技術振興機構 超小型製品用の微小、高性能焼結希土類磁石の製造方法
JP3965479B2 (ja) * 2003-07-28 2007-08-29 株式会社エフ・ティ・エスコーポレーション 箱型対向ターゲット式スパッタ装置及び化合物薄膜の製造方法
WO2005028697A1 (en) * 2003-09-12 2005-03-31 Applied Process Technologies, Inc. Magnetic mirror plasma source and method using same
US7625640B2 (en) * 2004-02-24 2009-12-01 Shin-Etsu Polymer Co., Ltd. Electromagnetic noise suppressor, structure with electromagnetic noise suppressing function, and method of manufacturing the same
US7112803B2 (en) * 2004-07-23 2006-09-26 Applied Materials, Israel, Ltd. Beam directing system and method for use in a charged particle beam column
KR100883588B1 (ko) * 2007-03-30 2009-02-18 지 . 텍 (주) 롤-투-롤 스퍼터 장치
JP6579796B2 (ja) * 2015-05-18 2019-09-25 長州産業株式会社 ミラートロンスパッタ装置
JP2020200519A (ja) * 2019-06-12 2020-12-17 株式会社アルバック 成膜装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100627A (en) * 1980-12-12 1982-06-22 Teijin Ltd Manufacture of vertical magnetic recording medium
US4395323A (en) * 1981-04-17 1983-07-26 Denton Vacuum Inc. Apparatus for improving a sputtering process
JPS58100680A (ja) * 1981-12-10 1983-06-15 Fujitsu Ltd スパツタリング装置
JPS58141433A (ja) * 1982-02-16 1983-08-22 Teijin Ltd 磁気記録媒体とその製造方法
JPS5953680A (ja) * 1982-09-21 1984-03-28 Teijin Ltd スパツタ装置
JPS5987039A (ja) * 1982-11-12 1984-05-19 Hitachi Ltd 薄膜形成装置
JPS59116376A (ja) * 1982-12-22 1984-07-05 Teijin Ltd 対向タ−ゲツト式スパツタ装置
JPS59193528A (ja) * 1983-04-18 1984-11-02 Teijin Ltd 磁気記録媒体の製造法
JPS6046369A (ja) * 1983-08-23 1985-03-13 Osaka Shinku Kiki Seisakusho:Kk 対向タ−ゲツト式スパツタ装置
JPS6046370A (ja) * 1983-08-23 1985-03-13 Osaka Shinku Kiki Seisakusho:Kk 対向タ−ゲット式スパッタ装置
JPS60101721A (ja) * 1983-11-05 1985-06-05 Konishiroku Photo Ind Co Ltd バリウムフエライト層の形成方法
JPS60106966A (ja) * 1983-11-12 1985-06-12 Konishiroku Photo Ind Co Ltd 対向タ−ゲツト式スパツタ装置
JPH0245701B2 (ja) * 1984-05-09 1990-10-11 Teijin Ltd Taikotaagetsutoshikisupatsutasochi
JPS6134176A (ja) * 1984-07-26 1986-02-18 Teijin Ltd 対向タ−ゲツト式スパツタ装置
JPS6134175A (ja) * 1984-07-26 1986-02-18 Teijin Ltd スパツタリング装置
JPS61183466A (ja) * 1985-02-12 1986-08-16 Teijin Ltd 対向タ−ゲツト式スパツタ装置
JPS61272374A (ja) * 1985-05-28 1986-12-02 Nec Corp スパツタ装置

Also Published As

Publication number Publication date
EP0273685A1 (de) 1988-07-06
DE3750127T2 (de) 1994-10-13
JPS63270461A (ja) 1988-11-08
JPH0575827B2 (de) 1993-10-21
EP0273685B1 (de) 1994-06-22
US4784739A (en) 1988-11-15
CA1325792C (en) 1994-01-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee