DE3883422T2 - Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung. - Google Patents

Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung.

Info

Publication number
DE3883422T2
DE3883422T2 DE88107606T DE3883422T DE3883422T2 DE 3883422 T2 DE3883422 T2 DE 3883422T2 DE 88107606 T DE88107606 T DE 88107606T DE 3883422 T DE3883422 T DE 3883422T DE 3883422 T2 DE3883422 T2 DE 3883422T2
Authority
DE
Germany
Prior art keywords
sputtering
compound
thin film
large surface
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88107606T
Other languages
English (en)
Other versions
DE3883422D1 (de
Inventor
Naoji C O Itami Works Fujimori
Keizo C O Itami Works O Harada
Shuji C O Itami Works Of Yazu
Tetsuji C O Itami Works Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3883422D1 publication Critical patent/DE3883422D1/de
Application granted granted Critical
Publication of DE3883422T2 publication Critical patent/DE3883422T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE88107606T 1987-05-12 1988-05-11 Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung. Expired - Fee Related DE3883422T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11534087 1987-05-12
JP63112101A JPH0772349B2 (ja) 1987-05-12 1988-05-09 大面積化合物薄膜の作製方法および装置

Publications (2)

Publication Number Publication Date
DE3883422D1 DE3883422D1 (de) 1993-09-30
DE3883422T2 true DE3883422T2 (de) 1994-02-17

Family

ID=26451336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88107606T Expired - Fee Related DE3883422T2 (de) 1987-05-12 1988-05-11 Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung.

Country Status (5)

Country Link
US (1) US4866032A (de)
EP (1) EP0291044B1 (de)
JP (1) JPH0772349B2 (de)
CA (1) CA1330548C (de)
DE (1) DE3883422T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0284489B2 (de) * 1987-03-14 2002-04-10 Sumitomo Electric Industries Limited Verfahren zur Abscheidung eines supraleitenden dünnen Filmes
DE3855246T2 (de) * 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
US4897969A (en) * 1988-05-02 1990-02-06 Masonry Processes, Inc. Method and means for texturizing objects
JP2664070B2 (ja) * 1988-08-29 1997-10-15 住友電気工業株式会社 複合酸化物超電導薄膜の作製方法
DE68921138T3 (de) * 1988-10-03 1998-07-16 Sumitomo Electric Industries Verfahren zur Herstellung eines Oxidverbindungssupraleiters des Bi-Sr-Ca-Cu-Systems.
EP0377073A3 (de) * 1988-12-07 1990-11-07 Mitsubishi Materials Corporation Sputter-Target für die Herstellung von Supraleitendem Oxyd aus fünf Elementen
JPH02212351A (ja) * 1989-02-10 1990-08-23 Mitsubishi Metal Corp 超電導セラミックス膜形成用ターゲット材
US5017553A (en) * 1990-01-25 1991-05-21 Westinghouse Electric Corp. High temperature superconductor having a high strength thermally matched high temperature sheath
JPH06196031A (ja) * 1992-12-22 1994-07-15 Natl Res Inst For Metals 酸化物超電導線材の製造方法
BE1006967A3 (fr) * 1993-04-16 1995-02-07 Cockerill Rech & Dev Procede pour la formation d'un revetement sur un substrat par pulverisation cathodique reactive.
US5405517A (en) * 1993-12-06 1995-04-11 Curtis M. Lampkin Magnetron sputtering method and apparatus for compound thin films
DE4418906B4 (de) * 1994-05-31 2004-03-25 Unaxis Deutschland Holding Gmbh Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung
US6270861B1 (en) * 1994-07-21 2001-08-07 Ut, Battelle Llc Individually controlled environments for pulsed addition and crystallization
BE1010797A3 (fr) * 1996-12-10 1999-02-02 Cockerill Rech & Dev Procede et dispositif pour la formation d'un revetement sur un substrat, par pulverisation cathodique.
KR100301110B1 (ko) 1998-11-23 2001-09-06 오길록 스퍼터링증착장비
US6413380B1 (en) * 2000-08-14 2002-07-02 International Business Machines Corporation Method and apparatus for providing deposited layer structures and articles so produced
DE10120383B4 (de) * 2001-04-25 2007-07-26 X-Fab Semiconductor Foundries Ag Verfahren zur Metallisierung von Siliziumscheiben durch Aufsputtern
US6994775B2 (en) * 2002-07-31 2006-02-07 The Regents Of The University Of California Multilayer composites and manufacture of same
DE10359508B4 (de) * 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Magnetronsputtern
EP2759619B1 (de) * 2013-01-29 2016-01-27 VOLTASOLAR Srl Anlage und Verfahren zur Herstellung einer Halbleiterschicht
CN106282923B (zh) * 2016-08-31 2017-07-18 北京埃德万斯离子束技术研究所股份有限公司 高温超导薄膜制备方法
CN114150375B (zh) * 2021-12-10 2023-11-17 福建师范大学 一种磁控共溅射制备Fe-Sn-Se-Te四元薄膜的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046666A (en) * 1976-05-07 1977-09-06 The United States Of America As Represented By The United States Energy Research And Development Administration Device for providing high-intensity ion or electron beam
GB2101638B (en) * 1981-07-16 1985-07-24 Ampex Moveable cathodes/targets for high rate sputtering system
US4434037A (en) * 1981-07-16 1984-02-28 Ampex Corporation High rate sputtering system and method
JPH0699801B2 (ja) * 1985-04-26 1994-12-07 松下電器産業株式会社 多成分薄膜の製造方法

Also Published As

Publication number Publication date
EP0291044A2 (de) 1988-11-17
DE3883422D1 (de) 1993-09-30
CA1330548C (en) 1994-07-05
EP0291044B1 (de) 1993-08-25
JPH0772349B2 (ja) 1995-08-02
US4866032A (en) 1989-09-12
JPS6456868A (en) 1989-03-03
EP0291044A3 (en) 1990-05-23

Similar Documents

Publication Publication Date Title
DE3883422T2 (de) Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung.
DE69106091D1 (de) Verfahren zur Abscheidung eines dünnen Films.
DE69216747D1 (de) Verfahren zur Bildung eines dünnen Films
DE68909395T2 (de) Verfahren zur Ablagerung eines dünnen Oxydfilms.
DE3750127T2 (de) Verfahren zur Herstellung eines dünnen Filmes durch Aufstäuben und Aufstäubvorrichtung vom Typ eines gegenüberliegenden Targets.
DE69124582D1 (de) Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat
DE3785737T2 (de) Geraet zur ausbesserung eines gemusterten films.
DE69133487D1 (de) Verfahren zur Herstellung eines dünnen metallischen Films
DE3854977T3 (de) Verfahren zur Abscheidung eines supraleitenden dünnen Filmes
DE69218276T2 (de) Verfahren zur Herstellung eines zusammengesetzten Films auf einem metallischen Substrat
DE69122578D1 (de) Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern
DE69123807T2 (de) Verfahren zum Verbessern der Eigenschaften einer Dünnschicht auf einem Substrat
DE68909618D1 (de) Verfahren zur Herstellung eines mit einer Dünnschicht aus Metalloxid überzogenen durchsichtigen leitenden Films.
DE69223792T2 (de) Vorrichtung zum bilden eines dünnen films
DE69118313D1 (de) Verfahren und Anlage zur Bildung eines dünnen Films
DE3864056D1 (de) Verfahren zur herstellung eines supraleitenden duennen films und vorrichtung hierfuer.
DE3785295D1 (de) Verfahren zur herstellung eines films aus ultrafeinen teilchen.
DE69019065D1 (de) Verfahren zum Abtrennen eines durch Bonden angehefteten Films von einer Leiterplatte.
DE69319937T2 (de) Vorrichtung zum geradlinigen Aufbringen eines dünnen Metalldrahtes auf der Oberfläche des thermoplastischen Films einer Verbundglasscheibe
DE69029729T2 (de) Verfahren zur Abscheidung aus der Gasphase eines Diamantfilmes
DE3787038T2 (de) Verfahren zur Ausbildung eines abgeschiedenen Films.
DE3585048D1 (de) Verfahren und vorrichtung zur herstellung eines duennfilmes.
DE3678960D1 (de) Verfahren zur ausbildung eines abgeschiedenen films.
DE68907295T2 (de) Verfahren zum Herstellen einer supraleitenden Dünnschicht vom Wismut-Typ.
DE69125915D1 (de) Verfahren zum Herstellen einer Dünnschicht aus einem Oxid-Supraleiter vom Wismuth-Typ

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee