JPH0772349B2 - 大面積化合物薄膜の作製方法および装置 - Google Patents

大面積化合物薄膜の作製方法および装置

Info

Publication number
JPH0772349B2
JPH0772349B2 JP63112101A JP11210188A JPH0772349B2 JP H0772349 B2 JPH0772349 B2 JP H0772349B2 JP 63112101 A JP63112101 A JP 63112101A JP 11210188 A JP11210188 A JP 11210188A JP H0772349 B2 JPH0772349 B2 JP H0772349B2
Authority
JP
Japan
Prior art keywords
target
sputtering
compound
thin film
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63112101A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6456868A (en
Inventor
直治 藤森
敬三 原田
修示 矢津
哲司 上代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP63112101A priority Critical patent/JPH0772349B2/ja
Priority to CA000566347A priority patent/CA1330548C/en
Priority to EP88107606A priority patent/EP0291044B1/de
Priority to DE88107606T priority patent/DE3883422T2/de
Priority to US07/192,903 priority patent/US4866032A/en
Publication of JPS6456868A publication Critical patent/JPS6456868A/ja
Publication of JPH0772349B2 publication Critical patent/JPH0772349B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
JP63112101A 1987-05-12 1988-05-09 大面積化合物薄膜の作製方法および装置 Expired - Fee Related JPH0772349B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP63112101A JPH0772349B2 (ja) 1987-05-12 1988-05-09 大面積化合物薄膜の作製方法および装置
CA000566347A CA1330548C (en) 1987-05-12 1988-05-10 Method and apparatus for producing thin film of compound having large area
EP88107606A EP0291044B1 (de) 1987-05-12 1988-05-11 Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung
DE88107606T DE3883422T2 (de) 1987-05-12 1988-05-11 Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung.
US07/192,903 US4866032A (en) 1987-05-12 1988-05-12 Method and apparatus for producing thin film of high to superconductor compound having large area

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-115340 1987-05-12
JP11534087 1987-05-12
JP63112101A JPH0772349B2 (ja) 1987-05-12 1988-05-09 大面積化合物薄膜の作製方法および装置

Publications (2)

Publication Number Publication Date
JPS6456868A JPS6456868A (en) 1989-03-03
JPH0772349B2 true JPH0772349B2 (ja) 1995-08-02

Family

ID=26451336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63112101A Expired - Fee Related JPH0772349B2 (ja) 1987-05-12 1988-05-09 大面積化合物薄膜の作製方法および装置

Country Status (5)

Country Link
US (1) US4866032A (de)
EP (1) EP0291044B1 (de)
JP (1) JPH0772349B2 (de)
CA (1) CA1330548C (de)
DE (1) DE3883422T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU598113B2 (en) * 1987-03-14 1990-06-14 Sumitomo Electric Industries, Ltd. Process for depositing a superconducting thin film
CA1336149C (en) * 1987-07-06 1995-07-04 Saburo Tanaka Superconducting thin film and a method for preparing the same
US4897969A (en) * 1988-05-02 1990-02-06 Masonry Processes, Inc. Method and means for texturizing objects
JP2664070B2 (ja) * 1988-08-29 1997-10-15 住友電気工業株式会社 複合酸化物超電導薄膜の作製方法
DE68921138T3 (de) * 1988-10-03 1998-07-16 Sumitomo Electric Industries Verfahren zur Herstellung eines Oxidverbindungssupraleiters des Bi-Sr-Ca-Cu-Systems.
EP0377073A3 (de) * 1988-12-07 1990-11-07 Mitsubishi Materials Corporation Sputter-Target für die Herstellung von Supraleitendem Oxyd aus fünf Elementen
KR950011339B1 (ko) * 1989-02-10 1995-09-30 미쓰비시 긴소꾸 가부시기가이샤 초전도 세라믹스막 형성용 타아겟재
US5017553A (en) * 1990-01-25 1991-05-21 Westinghouse Electric Corp. High temperature superconductor having a high strength thermally matched high temperature sheath
JPH06196031A (ja) * 1992-12-22 1994-07-15 Natl Res Inst For Metals 酸化物超電導線材の製造方法
BE1006967A3 (fr) * 1993-04-16 1995-02-07 Cockerill Rech & Dev Procede pour la formation d'un revetement sur un substrat par pulverisation cathodique reactive.
US5405517A (en) * 1993-12-06 1995-04-11 Curtis M. Lampkin Magnetron sputtering method and apparatus for compound thin films
DE4418906B4 (de) * 1994-05-31 2004-03-25 Unaxis Deutschland Holding Gmbh Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung
US6270861B1 (en) * 1994-07-21 2001-08-07 Ut, Battelle Llc Individually controlled environments for pulsed addition and crystallization
BE1010797A3 (fr) * 1996-12-10 1999-02-02 Cockerill Rech & Dev Procede et dispositif pour la formation d'un revetement sur un substrat, par pulverisation cathodique.
KR100301110B1 (ko) 1998-11-23 2001-09-06 오길록 스퍼터링증착장비
US6413380B1 (en) * 2000-08-14 2002-07-02 International Business Machines Corporation Method and apparatus for providing deposited layer structures and articles so produced
DE10120383B4 (de) * 2001-04-25 2007-07-26 X-Fab Semiconductor Foundries Ag Verfahren zur Metallisierung von Siliziumscheiben durch Aufsputtern
US6994775B2 (en) * 2002-07-31 2006-02-07 The Regents Of The University Of California Multilayer composites and manufacture of same
DE10359508B4 (de) 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Magnetronsputtern
EP2759619B1 (de) * 2013-01-29 2016-01-27 VOLTASOLAR Srl Anlage und Verfahren zur Herstellung einer Halbleiterschicht
CN106282923B (zh) * 2016-08-31 2017-07-18 北京埃德万斯离子束技术研究所股份有限公司 高温超导薄膜制备方法
CN114150375B (zh) * 2021-12-10 2023-11-17 福建师范大学 一种磁控共溅射制备Fe-Sn-Se-Te四元薄膜的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046666A (en) * 1976-05-07 1977-09-06 The United States Of America As Represented By The United States Energy Research And Development Administration Device for providing high-intensity ion or electron beam
GB2101638B (en) * 1981-07-16 1985-07-24 Ampex Moveable cathodes/targets for high rate sputtering system
US4434037A (en) * 1981-07-16 1984-02-28 Ampex Corporation High rate sputtering system and method
JPH0699801B2 (ja) * 1985-04-26 1994-12-07 松下電器産業株式会社 多成分薄膜の製造方法

Also Published As

Publication number Publication date
EP0291044A3 (en) 1990-05-23
EP0291044B1 (de) 1993-08-25
DE3883422T2 (de) 1994-02-17
DE3883422D1 (de) 1993-09-30
EP0291044A2 (de) 1988-11-17
CA1330548C (en) 1994-07-05
JPS6456868A (en) 1989-03-03
US4866032A (en) 1989-09-12

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Legal Events

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LAPS Cancellation because of no payment of annual fees