DE69122578D1 - Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern - Google Patents

Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern

Info

Publication number
DE69122578D1
DE69122578D1 DE69122578T DE69122578T DE69122578D1 DE 69122578 D1 DE69122578 D1 DE 69122578D1 DE 69122578 T DE69122578 T DE 69122578T DE 69122578 T DE69122578 T DE 69122578T DE 69122578 D1 DE69122578 D1 DE 69122578D1
Authority
DE
Germany
Prior art keywords
sputtering
improvement
substrate
layer formation
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122578T
Other languages
English (en)
Other versions
DE69122578T2 (de
Inventor
Meguru Kashida
Yoshihiko Nagata
Hitoshi Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69122578D1 publication Critical patent/DE69122578D1/de
Publication of DE69122578T2 publication Critical patent/DE69122578T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69122578T 1990-08-08 1991-07-09 Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern Expired - Fee Related DE69122578T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2209767A JPH07116588B2 (ja) 1990-08-08 1990-08-08 Ｘ線リソグラフィ用マスクの透過体の製造方法

Publications (2)

Publication Number Publication Date
DE69122578D1 true DE69122578D1 (de) 1996-11-14
DE69122578T2 DE69122578T2 (de) 1997-05-15

Family

ID=16578282

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122578T Expired - Fee Related DE69122578T2 (de) 1990-08-08 1991-07-09 Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern

Country Status (4)

Country Link
US (1) US5139633A (de)
EP (1) EP0470379B1 (de)
JP (1) JPH07116588B2 (de)
DE (1) DE69122578T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063246A (en) * 1997-05-23 2000-05-16 University Of Houston Method for depositing a carbon film on a membrane
US6660365B1 (en) 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6964731B1 (en) * 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6974629B1 (en) 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
DE19919010A1 (de) * 1999-04-27 2000-11-02 Mettler Toledo Gmbh Verfahren zum Beschichten und danach hergestellte Keramikbeschichtung
ATE253533T1 (de) * 1999-05-18 2003-11-15 Cardinal Cg Co Harte kratzfeste beschichtungen für substrate
WO2005063646A1 (en) 2003-12-22 2005-07-14 Cardinal Cg Company Graded photocatalytic coatings
US7713632B2 (en) 2004-07-12 2010-05-11 Cardinal Cg Company Low-maintenance coatings
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US7989094B2 (en) 2006-04-19 2011-08-02 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
JP5066967B2 (ja) * 2007-03-23 2012-11-07 セイコーエプソン株式会社 光学物品の製造方法
US20090104462A1 (en) * 2007-08-16 2009-04-23 Reflective X-Ray Optics Llc X-ray multilayer films and smoothing layers for x-ray optics having improved stress and roughness properties and method of making same
EP2066594B1 (de) 2007-09-14 2016-12-07 Cardinal CG Company Pflegeleichte beschichtungen und verfahren zur herstellung pflegeleichter beschichtungen
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology
CN115411099B (zh) * 2022-09-28 2024-07-02 桑德斯微电子器件（南京）有限公司 一种纯铂金势垒肖特基二极管的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE142568C (de) *
DE228421C (de) *
US4132624A (en) * 1971-02-05 1979-01-02 Triplex Safety Glass Company Limited Apparatus for producing metal oxide films
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
US4437966A (en) * 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
DD228421A3 (de) * 1983-10-27 1985-10-09 Hermsdorf Keramik Veb Einrichtung zum reaktionsgaseinlass beim partiellen reaktiven plasmatronsputtern
JPS619837A (ja) * 1984-06-25 1986-01-17 Hitachi Metals Ltd 磁気記録媒体の製造方法
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US4988424A (en) * 1989-06-07 1991-01-29 Ppg Industries, Inc. Mask and method for making gradient sputtered coatings

Also Published As

Publication number Publication date
JPH07116588B2 (ja) 1995-12-13
US5139633A (en) 1992-08-18
EP0470379B1 (de) 1996-10-09
EP0470379A1 (de) 1992-02-12
DE69122578T2 (de) 1997-05-15
JPH0499277A (ja) 1992-03-31

Similar Documents

Publication Publication Date Title
DE69122578D1 (de) Verbesserung zur Schichtbildung auf einem Substrat durch Sputtern
DE69110763D1 (de) Anzeigen mit einem durchsichtigen Substrat.
DE69123802D1 (de) Verfahren zum Auftragen einer Dünnschicht auf ein Substrat durch Sputtern
DE69421467D1 (de) Verfahren zum Ablegen einer Dünnschicht auf Basis von einem Titannitrid auf einem transparenten Substrat
DE68913077D1 (de) Sputterverfahren zur Erzeugung einer Dünnschicht.
DE68928402D1 (de) Verfahren zur Entfernung einer Oxidschicht auf einem Substrat
DE69210886D1 (de) Substrat mit Dünnfilmelementen
DE3586099D1 (de) Abscheiden eines ueberzugs auf einem poroesen substrat.
FR2641272B1 (fr) Substrat portant un revetement multi-couches et procede de depot d'un tel revetement
DE69209896D1 (de) Verfahren zur Herstellung degradierter Beschichtung auf einem Substrat
DE69123870D1 (de) Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer
FR2641271B1 (fr) Substrat portant un revetement et procede de depot d'un tel revetement
DE69219300D1 (de) Ein transparentes Filmbeschichtetes Substrat
DE69833192D1 (de) Zusammensetzung geeignet zur bereitstellung einer abriebfesten beschichtung auf einem substrat
DE69328257D1 (de) Vorrichtung zur herstellung von koextrudierten mehrschichtartikeln mit einer grenzschutzschicht
DE69031087D1 (de) Korrosionsbeständiges Substrat aus Sinterkarbid
DE3883422D1 (de) Verfahren und Vorrichtung eines dünnen Films mit einer grossen Oberfläche durch Zerstäubung aus einer Verbindung.
DE69225881D1 (de) Verfahren zur Herstellung eines Substrates vom SOI-Typ mit einer uniformen dünnen Silizium-Schicht
DE69218276D1 (de) Verfahren zur Herstellung eines zusammengesetzten Films auf einem metallischen Substrat
DE69114595D1 (de) Verfahren zur Bestimmung der vollständigen Abtragung einer Dünnschicht auf einem nichtplanaren Substrat.
DE59202154D1 (de) Verfahren zur herstellung einer leuchtstoffschicht auf einem substrat.
DE69123807D1 (de) Verfahren zum Verbessern der Eigenschaften einer Dünnschicht auf einem Substrat
DE59406868D1 (de) Verfahren zur Abscheidung einer Schicht auf einer Substratscheibe durch Sputtern durch Verwendung eines Kollimators
DE69128295D1 (de) Verfahren zur Herstellung eines Dünnschicht-Halbleiterbauteils auf einem transparenten, isolierenden Substrat
DE3865738D1 (de) Verteilvorrichtung zur bildung einer duennen schicht auf einer oberflaeche.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee