DE69124582D1 - Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat - Google Patents

Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat

Info

Publication number
DE69124582D1
DE69124582D1 DE69124582T DE69124582T DE69124582D1 DE 69124582 D1 DE69124582 D1 DE 69124582D1 DE 69124582 T DE69124582 T DE 69124582T DE 69124582 T DE69124582 T DE 69124582T DE 69124582 D1 DE69124582 D1 DE 69124582D1
Authority
DE
Germany
Prior art keywords
thickness
controlling
soi substrate
crystalline film
thin single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124582T
Other languages
English (en)
Other versions
DE69124582T2 (de
Inventor
Yutaka Ohta
Masatake Katayama
Takao Abe
Yasuaki Nakazato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69124582D1 publication Critical patent/DE69124582D1/de
Publication of DE69124582T2 publication Critical patent/DE69124582T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69124582T 1990-11-28 1991-11-26 Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat Expired - Fee Related DE69124582T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2332867A JPH0834198B2 (ja) 1990-11-28 1990-11-28 Ｓｏｉ基板における単結晶薄膜層の膜厚制御方法

Publications (2)

Publication Number Publication Date
DE69124582D1 true DE69124582D1 (de) 1997-03-20
DE69124582T2 DE69124582T2 (de) 1997-09-04

Family

ID=18259691

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124582T Expired - Fee Related DE69124582T2 (de) 1990-11-28 1991-11-26 Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat

Country Status (4)

Country Link
US (1) US5223080A (de)
EP (1) EP0488642B1 (de)
JP (1) JPH0834198B2 (de)
DE (1) DE69124582T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5643472A (en) * 1988-07-08 1997-07-01 Cauldron Limited Partnership Selective removal of material by irradiation
JPH0817166B2 (ja) * 1991-04-27 1996-02-21 信越半導体株式会社 超薄膜ｓｏｉ基板の製造方法及び製造装置
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
EP0547677A3 (en) * 1991-12-17 1996-10-16 Philips Nv Use of vapor-phase etching in fabrication of semiconductor-on-insulator structure
US5282921A (en) * 1992-06-16 1994-02-01 Hughes Aircraft Company Apparatus and method for optimally scanning a two-dimensional surface of one or more objects
JPH06140365A (ja) * 1992-10-23 1994-05-20 Shin Etsu Handotai Co Ltd Ｓｏｉ基板におけるｓｏｉ膜厚均一化方法
US5360509A (en) * 1993-03-08 1994-11-01 Gi Corporation Low cost method of fabricating epitaxial semiconductor devices
JP3313840B2 (ja) 1993-09-14 2002-08-12 富士通株式会社 半導体装置の製造方法
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
IL112511A0 (en) * 1994-02-18 1995-05-26 Hughes Aircraft Co System for improving the total thickness variation of a wafer
US5571429A (en) * 1994-02-25 1996-11-05 Litel Instruments Apparatus and process for high speed laminate processing with computer generated holograms
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
US5494849A (en) * 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
US5635414A (en) * 1995-03-28 1997-06-03 Zakaluk; Gregory Low cost method of fabricating shallow junction, Schottky semiconductor devices
US5795493A (en) * 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
JPH10233375A (ja) * 1997-02-19 1998-09-02 Sony Corp 被加工物の表面加工方法及び半導体薄層の形成方法
US6014944A (en) * 1997-09-19 2000-01-18 The United States Of America As Represented By The Secretary Of The Navy Apparatus for improving crystalline thin films with a contoured beam pulsed laser
US6248651B1 (en) 1998-06-24 2001-06-19 General Semiconductor, Inc. Low cost method of fabricating transient voltage suppressor semiconductor devices or the like
TW580581B (en) * 1998-11-10 2004-03-21 Mosel Vitelic Inc Method of estimating thin-film thickness and formation conditions
JP2000173976A (ja) * 1998-12-02 2000-06-23 Mitsubishi Electric Corp 半導体装置の製造方法
US6096579A (en) * 1999-03-25 2000-08-01 Vanguard International Semiconductor Corporation Method for controlling the thickness of a passivation layer on a semiconductor device
US6380367B1 (en) 1999-11-18 2002-04-30 Basf Corporation Continuous process for the production of sucrose based polyether polyols
JP3893868B2 (ja) * 2000-10-11 2007-03-14 東京エレクトロン株式会社 電界効果トランジスタの製造方法、並びに、半導体デバイスの製造方法及びその装置
DE102004054566B4 (de) 2004-11-11 2008-04-30 Siltronic Ag Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit
DE102006022093B4 (de) * 2006-05-11 2010-04-08 Siltronic Ag Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen
KR100810633B1 (ko) * 2006-05-17 2008-03-06 삼성에스디아이 주식회사 레이저 조사장치, 레이저 결정화 장치 및 그를 이용한결정화 방법
DE102006023497B4 (de) 2006-05-18 2008-05-29 Siltronic Ag Verfahren zur Behandlung einer Halbleiterscheibe
DE102007006151B4 (de) 2007-02-07 2008-11-06 Siltronic Ag Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet
KR101484296B1 (ko) * 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작방법
US8163628B2 (en) * 2007-11-01 2012-04-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate
FR3002687B1 (fr) * 2013-02-26 2015-03-06 Soitec Silicon On Insulator Procede de traitement d une structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
JPS62245636A (ja) * 1986-04-18 1987-10-26 Hitachi Ltd 観察装置
JPH0669085B2 (ja) * 1986-09-05 1994-08-31 富士通株式会社 半導体基板の製造方法
US4717446A (en) * 1986-09-18 1988-01-05 Motorola Inc. Method of detecting the endpoint of the etch of epitaxially grown silicon
JPH02196425A (ja) * 1989-01-25 1990-08-03 Tokai Univ 紫外レーザー光によるエッチング方法
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
JPH0475337A (ja) * 1990-07-17 1992-03-10 Seiko Epson Corp 半導体基板の研磨法

Also Published As

Publication number Publication date
DE69124582T2 (de) 1997-09-04
EP0488642A3 (de) 1994-02-23
JPH04196559A (ja) 1992-07-16
US5223080A (en) 1993-06-29
JPH0834198B2 (ja) 1996-03-29
EP0488642A2 (de) 1992-06-03
EP0488642B1 (de) 1997-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee