DE3689680D1 - Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. - Google Patents
Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.Info
- Publication number
- DE3689680D1 DE3689680D1 DE86307495T DE3689680T DE3689680D1 DE 3689680 D1 DE3689680 D1 DE 3689680D1 DE 86307495 T DE86307495 T DE 86307495T DE 3689680 T DE3689680 T DE 3689680T DE 3689680 D1 DE3689680 D1 DE 3689680D1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- switched
- independent ignition
- control electrode
- extinguishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21457885A JPS6276557A (ja) | 1985-09-30 | 1985-09-30 | 絶縁ゲ−ト型自己タ−ンオフ素子 |
JP9541886A JPS62252168A (ja) | 1986-04-24 | 1986-04-24 | 絶縁ゲ−ト型自己タ−ンオフサイリスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689680D1 true DE3689680D1 (de) | 1994-04-07 |
DE3689680T2 DE3689680T2 (de) | 1994-06-23 |
Family
ID=26436656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3689680T Expired - Lifetime DE3689680T2 (de) | 1985-09-30 | 1986-09-30 | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
Country Status (3)
Country | Link |
---|---|
US (2) | US4760431A (de) |
EP (1) | EP0219995B1 (de) |
DE (1) | DE3689680T2 (de) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3689680T2 (de) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
EP0280536B1 (de) * | 1987-02-26 | 1997-05-28 | Kabushiki Kaisha Toshiba | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
US5144401A (en) * | 1987-02-26 | 1992-09-01 | Kabushiki Kaisha Toshiba | Turn-on/off driving technique for insulated gate thyristor |
JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
JP2722453B2 (ja) * | 1987-06-08 | 1998-03-04 | 三菱電機株式会社 | 半導体装置 |
US5055417A (en) * | 1987-06-11 | 1991-10-08 | National Semiconductor Corporation | Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells |
DE3869752D1 (de) * | 1987-12-23 | 1992-05-07 | Bbc Brown Boveri & Cie | Abschaltbarer thyristor mit ueberspannungsschutz. |
DE3902300C3 (de) * | 1988-01-30 | 1995-02-09 | Toshiba Kawasaki Kk | Abschaltthyristor |
EP0329992A3 (de) * | 1988-02-25 | 1990-03-21 | Siemens Aktiengesellschaft | Abschaltbarer Thyristor mit geringer Ansteuerleistung |
EP0329993A3 (de) * | 1988-02-25 | 1990-03-21 | Siemens Aktiengesellschaft | Thyristor mit geringer Ansteuerleistung |
EP0340445B1 (de) * | 1988-04-22 | 1993-08-25 | Asea Brown Boveri Ag | Abschaltbares Leistungshalbleiterbauelement |
DE3832208A1 (de) * | 1988-09-22 | 1990-03-29 | Asea Brown Boveri | Steuerbares leistungshalbleiterbauelement |
FR2638899B1 (fr) * | 1988-11-10 | 1991-02-01 | Sgs Thomson Microelectronics | Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture |
EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
EP0405200A1 (de) * | 1989-06-30 | 1991-01-02 | Asea Brown Boveri Ag | MOS-gesteuertes, bipolares Leistungshalbleiter-Bauelement |
WO1991003078A1 (en) * | 1989-08-17 | 1991-03-07 | Ixys Corporation | Insulated gate thyristor with gate turn on and turn off |
EP0416805B1 (de) * | 1989-08-30 | 1996-11-20 | Siliconix, Inc. | Transistor mit Spannungsbegrenzungsanordnung |
US5182626A (en) * | 1989-09-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor and method of manufacturing the same |
JPH0795596B2 (ja) * | 1989-10-23 | 1995-10-11 | 三菱電機株式会社 | サイリスタ及びその製造方法 |
US5194394A (en) * | 1989-10-23 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Thyristor and method of manufacturing the same |
DE4102099A1 (de) * | 1990-02-13 | 1991-08-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement |
GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
US5278076A (en) * | 1990-02-28 | 1994-01-11 | At&T Bell Laboratories | Method of marking a lateral mos controlled thyristor |
US5151762A (en) * | 1990-04-12 | 1992-09-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device, fabricating method thereof and flash control device using the semiconductor device |
JP3190057B2 (ja) * | 1990-07-02 | 2001-07-16 | 株式会社東芝 | 複合集積回路装置 |
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
DE59108541D1 (de) * | 1990-11-29 | 1997-03-27 | Asea Brown Boveri | Abschaltbares Leistungshalbleiter-Bauelement |
JPH04284669A (ja) * | 1991-03-14 | 1992-10-09 | Fuji Electric Co Ltd | 絶縁ゲート制御サイリスタ |
EP0507974B1 (de) * | 1991-04-11 | 1995-12-20 | Asea Brown Boveri Ag | Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement |
DE69228721T2 (de) * | 1991-06-10 | 1999-10-21 | Toshiba Kawasaki Kk | Thyristor mit isoliertem Gate |
DE4121375A1 (de) * | 1991-06-28 | 1993-01-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
SE468731B (sv) * | 1991-07-17 | 1993-03-08 | Asea Brown Boveri | Slaeckbart tyristorsystem |
KR930009112A (ko) * | 1991-10-31 | 1993-05-22 | 사토 후미오 | 반도체장치 |
DE4137840A1 (de) * | 1991-11-16 | 1993-06-03 | Asea Brown Boveri | Halbleiterschalter zum sperren hoher spannungen |
JP3119931B2 (ja) * | 1992-03-31 | 2000-12-25 | 株式会社東芝 | サイリスタ |
JP2796470B2 (ja) * | 1992-05-06 | 1998-09-10 | 三菱電機株式会社 | 自己消弧型サイリスタおよびその製造方法 |
JPH06169089A (ja) * | 1992-05-07 | 1994-06-14 | Nec Corp | 縦型mosfetの製造方法 |
US5349212A (en) * | 1992-06-01 | 1994-09-20 | Fuji Electric Co., Ltd. | Semiconductor device having thyristor structure |
US5294816A (en) * | 1992-06-10 | 1994-03-15 | North Carolina State University At Raleigh | Unit cell arrangement for emitter switched thyristor with base resistance control |
US5198687A (en) * | 1992-07-23 | 1993-03-30 | Baliga Bantval J | Base resistance controlled thyristor with single-polarity turn-on and turn-off control |
JP3163820B2 (ja) * | 1992-07-28 | 2001-05-08 | 富士電機株式会社 | 半導体装置 |
US5426314A (en) * | 1992-07-29 | 1995-06-20 | Zaidan Hojin Handotai Kenkyu Shinkokai | Insulated gate control static induction thyristor |
US5293054A (en) * | 1992-11-23 | 1994-03-08 | North Carolina State University At Raleigh | Emitter switched thyristor without parasitic thyristor latch-up susceptibility |
US5241194A (en) * | 1992-12-14 | 1993-08-31 | North Carolina State University At Raleigh | Base resistance controlled thyristor with integrated single-polarity gate control |
US5396087A (en) * | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
US5306930A (en) * | 1992-12-14 | 1994-04-26 | North Carolina State University At Raleigh | Emitter switched thyristor with buried dielectric layer |
JPH06244430A (ja) * | 1993-02-16 | 1994-09-02 | Fuji Electric Co Ltd | 半導体装置 |
US5412227A (en) * | 1993-07-26 | 1995-05-02 | Ixys Corporation | MOS-controlled thyristor with non-planar geometry |
US5606183A (en) * | 1993-07-27 | 1997-02-25 | Fuji Electric Co., Ltd. | Double-gated turn-off thyristor |
JP3116695B2 (ja) * | 1993-12-10 | 2000-12-11 | 富士電機株式会社 | 半導体装置 |
JP3260944B2 (ja) * | 1993-12-15 | 2002-02-25 | 三菱電機株式会社 | 電圧駆動型サイリスタおよびその製造方法 |
JPH07335858A (ja) * | 1994-06-08 | 1995-12-22 | Fuji Electric Co Ltd | 絶縁ゲートサイリスタおよびその制御方法 |
JP3163910B2 (ja) * | 1994-08-31 | 2001-05-08 | 富士電機株式会社 | 絶縁ゲート型サイリスタ |
DE19534388B4 (de) * | 1994-09-19 | 2009-03-19 | International Rectifier Corp., El Segundo | IGBT-Transistorbauteil |
US6727527B1 (en) | 1995-07-31 | 2004-04-27 | Ixys Corporation | Reverse blocking IGBT |
US20040061170A1 (en) * | 1995-07-31 | 2004-04-01 | Ixys Corporation | Reverse blocking IGBT |
US5698454A (en) * | 1995-07-31 | 1997-12-16 | Ixys Corporation | Method of making a reverse blocking IGBT |
DE59713039D1 (de) * | 1996-05-20 | 2010-08-26 | Infineon Technologies Ag | Thyristor mit integriertem du/dt-schutz |
US6936908B2 (en) * | 2001-05-03 | 2005-08-30 | Ixys Corporation | Forward and reverse blocking devices |
DE10202479A1 (de) * | 2002-01-23 | 2003-08-07 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes |
US7279743B2 (en) | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
US8471390B2 (en) | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
US8368126B2 (en) * | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
US8148748B2 (en) * | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
CN109599433A (zh) * | 2018-12-10 | 2019-04-09 | 泉州臻美智能科技有限公司 | 一种金属氧化物半导体关断晶闸管及其制作方法 |
JP7396000B2 (ja) * | 2019-12-02 | 2023-12-12 | 富士電機株式会社 | 炭化珪素半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
JPS55121682A (en) * | 1979-03-14 | 1980-09-18 | Nec Corp | Field effect transistor |
DE2915885C2 (de) * | 1979-04-19 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
FR2505102B1 (fr) * | 1981-04-29 | 1986-01-24 | Radiotechnique Compelec | Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree |
JPS57186833A (en) * | 1981-05-13 | 1982-11-17 | Hitachi Ltd | Switching element |
US4441117A (en) * | 1981-07-27 | 1984-04-03 | Intersil, Inc. | Monolithically merged field effect transistor and bipolar junction transistor |
US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
US4443931A (en) * | 1982-06-28 | 1984-04-24 | General Electric Company | Method of fabricating a semiconductor device with a base region having a deep portion |
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
GB2128018A (en) * | 1982-09-22 | 1984-04-18 | Philips Electronic Associated | Insulated-gate field-effect transistors |
US4604638A (en) * | 1983-05-17 | 1986-08-05 | Kabushiki Kaisha Toshiba | Five layer semiconductor device with separate insulated turn-on and turn-off gates |
JPS6053078A (ja) * | 1983-09-02 | 1985-03-26 | Toshiba Corp | 半導体装置 |
US4636830A (en) * | 1984-06-04 | 1987-01-13 | General Motors Corporation | Insulated gate-controlled thyristor having shorted anode |
DE3689680T2 (de) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
-
1986
- 1986-09-30 DE DE3689680T patent/DE3689680T2/de not_active Expired - Lifetime
- 1986-09-30 US US06/913,753 patent/US4760431A/en not_active Expired - Lifetime
- 1986-09-30 EP EP86307495A patent/EP0219995B1/de not_active Expired - Lifetime
-
1988
- 1988-02-19 US US07/157,584 patent/US4914496A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0219995A2 (de) | 1987-04-29 |
EP0219995A3 (en) | 1989-11-29 |
DE3689680T2 (de) | 1994-06-23 |
US4914496A (en) | 1990-04-03 |
US4760431A (en) | 1988-07-26 |
EP0219995B1 (de) | 1994-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |