DE3689680D1 - Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. - Google Patents

Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.

Info

Publication number
DE3689680D1
DE3689680D1 DE86307495T DE3689680T DE3689680D1 DE 3689680 D1 DE3689680 D1 DE 3689680D1 DE 86307495 T DE86307495 T DE 86307495T DE 3689680 T DE3689680 T DE 3689680T DE 3689680 D1 DE3689680 D1 DE 3689680D1
Authority
DE
Germany
Prior art keywords
thyristor
switched
independent ignition
control electrode
extinguishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86307495T
Other languages
English (en)
Other versions
DE3689680T2 (de
Inventor
Akio Patent Division Nakagawa
Takashi Patent Divisio Shinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21457885A external-priority patent/JPS6276557A/ja
Priority claimed from JP9541886A external-priority patent/JPS62252168A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3689680D1 publication Critical patent/DE3689680D1/de
Publication of DE3689680T2 publication Critical patent/DE3689680T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE3689680T 1985-09-30 1986-09-30 Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. Expired - Lifetime DE3689680T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21457885A JPS6276557A (ja) 1985-09-30 1985-09-30 絶縁ゲ−ト型自己タ−ンオフ素子
JP9541886A JPS62252168A (ja) 1986-04-24 1986-04-24 絶縁ゲ−ト型自己タ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE3689680D1 true DE3689680D1 (de) 1994-04-07
DE3689680T2 DE3689680T2 (de) 1994-06-23

Family

ID=26436656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689680T Expired - Lifetime DE3689680T2 (de) 1985-09-30 1986-09-30 Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.

Country Status (3)

Country Link
US (2) US4760431A (de)
EP (1) EP0219995B1 (de)
DE (1) DE3689680T2 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
JP2722453B2 (ja) * 1987-06-08 1998-03-04 三菱電機株式会社 半導体装置
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
EP0321801B1 (de) * 1987-12-23 1992-04-01 BBC Brown Boveri AG Abschaltbarer Thyristor mit Überspannungsschutz
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
EP0329992A3 (de) * 1988-02-25 1990-03-21 Siemens Aktiengesellschaft Abschaltbarer Thyristor mit geringer Ansteuerleistung
EP0329993A3 (de) * 1988-02-25 1990-03-21 Siemens Aktiengesellschaft Thyristor mit geringer Ansteuerleistung
EP0340445B1 (de) * 1988-04-22 1993-08-25 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
DE3832208A1 (de) * 1988-09-22 1990-03-29 Asea Brown Boveri Steuerbares leistungshalbleiterbauelement
FR2638899B1 (fr) * 1988-11-10 1991-02-01 Sgs Thomson Microelectronics Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
EP0405200A1 (de) * 1989-06-30 1991-01-02 Asea Brown Boveri Ag MOS-gesteuertes, bipolares Leistungshalbleiter-Bauelement
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
DE69029180T2 (de) * 1989-08-30 1997-05-22 Siliconix Inc Transistor mit Spannungsbegrenzungsanordnung
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5194394A (en) * 1989-10-23 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of manufacturing the same
JPH0795596B2 (ja) * 1989-10-23 1995-10-11 三菱電機株式会社 サイリスタ及びその製造方法
DE4102099A1 (de) * 1990-02-13 1991-08-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
GB2241827B (en) * 1990-02-23 1994-01-26 Matsushita Electric Works Ltd Method for manufacturing optically triggered lateral thyristor
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor
US5151762A (en) * 1990-04-12 1992-09-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, fabricating method thereof and flash control device using the semiconductor device
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
EP0487869B1 (de) * 1990-11-29 1997-02-12 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiter-Bauelement
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
EP0507974B1 (de) * 1991-04-11 1995-12-20 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement
EP0522712B1 (de) * 1991-06-10 1999-03-24 Kabushiki Kaisha Toshiba Thyristor mit isoliertem Gate
DE4121375A1 (de) * 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
SE468731B (sv) * 1991-07-17 1993-03-08 Asea Brown Boveri Slaeckbart tyristorsystem
DE69223738T2 (de) * 1991-10-31 1998-05-14 Toshiba Kawasaki Kk MOS-Gate-kontrollierter Thyristor
DE4137840A1 (de) * 1991-11-16 1993-06-03 Asea Brown Boveri Halbleiterschalter zum sperren hoher spannungen
JP3119931B2 (ja) * 1992-03-31 2000-12-25 株式会社東芝 サイリスタ
JP2796470B2 (ja) * 1992-05-06 1998-09-10 三菱電機株式会社 自己消弧型サイリスタおよびその製造方法
JPH06169089A (ja) * 1992-05-07 1994-06-14 Nec Corp 縦型ｍｏｓｆｅｔの製造方法
GB2267996B (en) * 1992-06-01 1996-04-17 Fuji Electric Co Ltd Semiconductor device
US5294816A (en) * 1992-06-10 1994-03-15 North Carolina State University At Raleigh Unit cell arrangement for emitter switched thyristor with base resistance control
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
JP3163820B2 (ja) * 1992-07-28 2001-05-08 富士電機株式会社 半導体装置
US5426314A (en) * 1992-07-29 1995-06-20 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate control static induction thyristor
US5293054A (en) * 1992-11-23 1994-03-08 North Carolina State University At Raleigh Emitter switched thyristor without parasitic thyristor latch-up susceptibility
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
US5241194A (en) * 1992-12-14 1993-08-31 North Carolina State University At Raleigh Base resistance controlled thyristor with integrated single-polarity gate control
JPH06244430A (ja) * 1993-02-16 1994-09-02 Fuji Electric Co Ltd 半導体装置
US5412227A (en) * 1993-07-26 1995-05-02 Ixys Corporation MOS-controlled thyristor with non-planar geometry
US5606183A (en) * 1993-07-27 1997-02-25 Fuji Electric Co., Ltd. Double-gated turn-off thyristor
JP3116695B2 (ja) * 1993-12-10 2000-12-11 富士電機株式会社 半導体装置
JP3260944B2 (ja) * 1993-12-15 2002-02-25 三菱電機株式会社 電圧駆動型サイリスタおよびその製造方法
JPH07335858A (ja) * 1994-06-08 1995-12-22 Fuji Electric Co Ltd 絶縁ゲートサイリスタおよびその制御方法
JP3163910B2 (ja) * 1994-08-31 2001-05-08 富士電機株式会社 絶縁ゲート型サイリスタ
DE19534388B4 (de) * 1994-09-19 2009-03-19 International Rectifier Corp., El Segundo IGBT-Transistorbauteil
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
EP0902979B1 (de) * 1996-05-20 2010-07-14 Infineon Technologies AG Thyristor mit integriertem du/dt-schutz
US6936908B2 (en) * 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
DE10202479A1 (de) * 2002-01-23 2003-08-07 Infineon Technologies Ag Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
US8471390B2 (en) * 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) * 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US8148748B2 (en) * 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
CN109599433A (zh) * 2018-12-10 2019-04-09 泉州臻美智能科技有限公司 一种金属氧化物半导体关断晶闸管及其制作方法
JP7396000B2 (ja) * 2019-12-02 2023-12-12 富士電機株式会社 炭化珪素半導体装置

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SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS55121682A (en) * 1979-03-14 1980-09-18 Nec Corp Field effect transistor
DE2915885C2 (de) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
JPS57186833A (en) * 1981-05-13 1982-11-17 Hitachi Ltd Switching element
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
GB2128018A (en) * 1982-09-22 1984-04-18 Philips Electronic Associated Insulated-gate field-effect transistors
JPS6053078A (ja) * 1983-09-02 1985-03-26 Toshiba Corp 半導体装置
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
US4636830A (en) * 1984-06-04 1987-01-13 General Motors Corporation Insulated gate-controlled thyristor having shorted anode
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.

Also Published As

Publication number Publication date
EP0219995B1 (de) 1994-03-02
EP0219995A3 (en) 1989-11-29
EP0219995A2 (de) 1987-04-29
US4914496A (en) 1990-04-03
DE3689680T2 (de) 1994-06-23
US4760431A (en) 1988-07-26

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)