FR2638899B1 - Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture - Google Patents

Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture

Info

Publication number
FR2638899B1
FR2638899B1 FR8815301A FR8815301A FR2638899B1 FR 2638899 B1 FR2638899 B1 FR 2638899B1 FR 8815301 A FR8815301 A FR 8815301A FR 8815301 A FR8815301 A FR 8815301A FR 2638899 B1 FR2638899 B1 FR 2638899B1
Authority
FR
France
Prior art keywords
opening
mos transistors
power transistor
bipolar power
transistor associated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8815301A
Other languages
English (en)
Other versions
FR2638899A1 (fr
Inventor
Jacques Mille
Antoine Pavlin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR8815301A priority Critical patent/FR2638899B1/fr
Publication of FR2638899A1 publication Critical patent/FR2638899A1/fr
Application granted granted Critical
Publication of FR2638899B1 publication Critical patent/FR2638899B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8815301A 1988-11-10 1988-11-10 Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture Expired - Lifetime FR2638899B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8815301A FR2638899B1 (fr) 1988-11-10 1988-11-10 Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8815301A FR2638899B1 (fr) 1988-11-10 1988-11-10 Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture

Publications (2)

Publication Number Publication Date
FR2638899A1 FR2638899A1 (fr) 1990-05-11
FR2638899B1 true FR2638899B1 (fr) 1991-02-01

Family

ID=9372174

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8815301A Expired - Lifetime FR2638899B1 (fr) 1988-11-10 1988-11-10 Transistor bipolaire de puissance associe a des transistors mos d'ouverture et de fermeture

Country Status (1)

Country Link
FR (1) FR2638899B1 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JPS634665A (ja) * 1986-06-25 1988-01-09 Hitachi Ltd 複合型トランジスタ

Also Published As

Publication number Publication date
FR2638899A1 (fr) 1990-05-11

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