DE3689679D1 - Herstellungsverfahren für ein Halbleiterbauelement frei von Leckstrom durch eine Halbleiterschict. - Google Patents
Herstellungsverfahren für ein Halbleiterbauelement frei von Leckstrom durch eine Halbleiterschict.Info
- Publication number
- DE3689679D1 DE3689679D1 DE86306556T DE3689679T DE3689679D1 DE 3689679 D1 DE3689679 D1 DE 3689679D1 DE 86306556 T DE86306556 T DE 86306556T DE 3689679 T DE3689679 T DE 3689679T DE 3689679 D1 DE3689679 D1 DE 3689679D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- leakage current
- semiconductor device
- device free
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60186206A JPS6254479A (ja) | 1985-08-24 | 1985-08-24 | 光電変換装置作製方法 |
JP60186205A JPS6254478A (ja) | 1985-08-24 | 1985-08-24 | 光電変換装置 |
JP60248640A JPH0620148B2 (ja) | 1985-11-06 | 1985-11-06 | 半導体装置作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689679D1 true DE3689679D1 (de) | 1994-04-07 |
DE3689679T2 DE3689679T2 (de) | 1994-06-09 |
Family
ID=27325704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3689679T Expired - Fee Related DE3689679T2 (de) | 1985-08-24 | 1986-08-22 | Herstellungsverfahren für ein Halbleiterbauelement frei von Leckstrom durch eine Halbleiterschict. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4937651A (de) |
EP (1) | EP0213910B1 (de) |
AU (1) | AU594359B2 (de) |
DE (1) | DE3689679T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU583423B2 (en) * | 1985-09-21 | 1989-04-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same |
US4774193A (en) * | 1986-03-11 | 1988-09-27 | Siemens Aktiengesellschaft | Method for avoiding shorts in the manufacture of layered electrical components |
JP2680002B2 (ja) * | 1987-11-14 | 1997-11-19 | キヤノン株式会社 | 光電変換装置 |
US4981525A (en) * | 1988-02-19 | 1991-01-01 | Sanyo Electric Co., Ltd. | Photovoltaic device |
US4893171A (en) * | 1988-03-30 | 1990-01-09 | Director General, Agenty Of Industrial Science And Technology | Semiconductor device with resin bonding to support structure |
WO1990004263A1 (en) * | 1988-10-14 | 1990-04-19 | Matsushita Electric Industrial Co., Ltd. | Image sensor and method of producing the same |
US5266828A (en) * | 1988-10-14 | 1993-11-30 | Matsushita Electric Industrial Co., Ltd. | Image sensors with an optical fiber array |
US5139970A (en) * | 1989-06-01 | 1992-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electric device and manufacturing method of the same |
US5279678A (en) * | 1992-01-13 | 1994-01-18 | Photon Energy, Inc. | Photovoltaic cell with thin CS layer |
US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
US6023318A (en) * | 1996-04-15 | 2000-02-08 | Canon Kabushiki Kaisha | Electrode plate, process for producing the plate, liquid crystal device including the plate and process for producing the device |
DE19842679C2 (de) * | 1998-09-17 | 2000-12-21 | Siemens Solar Gmbh | Verfahren zur Strukturierung von transparenten Elektrodenschichten |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
FR2818442B1 (fr) * | 2000-12-20 | 2003-10-17 | Energy Systems Internat Bv | Dispositif photovoltaique formant vitrage |
US6777249B2 (en) * | 2001-06-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of repairing a light-emitting device, and method of manufacturing a light-emitting device |
US20050212000A1 (en) * | 2004-03-26 | 2005-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light emitting device, and electronic device |
US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US7276724B2 (en) * | 2005-01-20 | 2007-10-02 | Nanosolar, Inc. | Series interconnected optoelectronic device module assembly |
US7732229B2 (en) | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
EP2161760B1 (de) * | 2008-09-05 | 2017-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Photoelektrische Umwandlungsvorrichtung |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
US9059347B2 (en) | 2010-06-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
JP2012064933A (ja) | 2010-08-19 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | 光電変換モジュール及びその作製方法 |
US8557614B2 (en) | 2010-12-28 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing lighting device |
WO2012103655A1 (de) * | 2011-02-04 | 2012-08-09 | Von Roll Solar Ag | Verfahren zur füllung von defekten in einer photovoltaikvorrichtung |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3946278A (en) * | 1973-12-19 | 1976-03-23 | Westinghouse Air Brake Company | Fail-safe four leaded zener diode arrangement |
US4166918A (en) * | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
JPS5613778A (en) | 1979-07-16 | 1981-02-10 | Shunpei Yamazaki | Photoelectric converter and its preparation |
JPS5613777A (en) | 1979-07-16 | 1981-02-10 | Shunpei Yamazaki | Photoelectric converter |
JPS5613779A (en) | 1979-07-16 | 1981-02-10 | Shunpei Yamazaki | Photoelectric converter and its preparation |
JPS55124274A (en) | 1980-02-04 | 1980-09-25 | Sanyo Electric Co Ltd | Solar battery |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
DE3047383A1 (de) * | 1980-12-16 | 1982-07-15 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle mit erhoehtem wirkungsgrad |
JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
US4527179A (en) * | 1981-02-09 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystal light emitting semiconductor device |
IN158650B (de) * | 1981-03-16 | 1986-12-27 | Sohio Commercial Dev Co | |
US4420497A (en) * | 1981-08-24 | 1983-12-13 | Fairchild Camera And Instrument Corporation | Method of detecting and repairing latent defects in a semiconductor dielectric layer |
JPS5877263A (ja) * | 1981-11-02 | 1983-05-10 | Agency Of Ind Science & Technol | 光起電力素子 |
US4640002A (en) * | 1982-02-25 | 1987-02-03 | The University Of Delaware | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices |
JPS5935490A (ja) * | 1982-08-24 | 1984-02-27 | Sanyo Electric Co Ltd | 光半導体装置の製造方法 |
DE3312053C2 (de) * | 1983-04-02 | 1985-03-28 | Nukem Gmbh, 6450 Hanau | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle |
AU2042183A (en) * | 1983-08-03 | 1985-02-07 | Energy Conversion Devices Inc. | Eliminating short circuits in photovoltaic devices |
JPS6050979A (ja) * | 1983-08-30 | 1985-03-22 | Semiconductor Energy Lab Co Ltd | 発光半導体装置 |
US4633034A (en) * | 1985-02-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
US4698494A (en) * | 1985-06-06 | 1987-10-06 | Fuji Electric Co., Ltd. | Image sensor and method of making |
JPS6258685A (ja) * | 1985-09-09 | 1987-03-14 | Fuji Electric Co Ltd | 非晶質半導体太陽電池の製造方法 |
-
1986
- 1986-08-22 EP EP86306556A patent/EP0213910B1/de not_active Expired - Lifetime
- 1986-08-22 AU AU61781/86A patent/AU594359B2/en not_active Ceased
- 1986-08-22 US US06/899,160 patent/US4937651A/en not_active Expired - Lifetime
- 1986-08-22 DE DE3689679T patent/DE3689679T2/de not_active Expired - Fee Related
-
1987
- 1987-09-04 US US07/092,943 patent/US4786607A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4937651A (en) | 1990-06-26 |
DE3689679T2 (de) | 1994-06-09 |
EP0213910A2 (de) | 1987-03-11 |
EP0213910A3 (en) | 1988-10-05 |
AU594359B2 (en) | 1990-03-08 |
AU6178186A (en) | 1987-02-26 |
EP0213910B1 (de) | 1994-03-02 |
US4786607A (en) | 1988-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |