DE3671325D1 - Verfahren zum photochemischen aufdampfen von oxydschichten. - Google Patents
Verfahren zum photochemischen aufdampfen von oxydschichten.Info
- Publication number
- DE3671325D1 DE3671325D1 DE8686904610T DE3671325T DE3671325D1 DE 3671325 D1 DE3671325 D1 DE 3671325D1 DE 8686904610 T DE8686904610 T DE 8686904610T DE 3671325 T DE3671325 T DE 3671325T DE 3671325 D1 DE3671325 D1 DE 3671325D1
- Authority
- DE
- Germany
- Prior art keywords
- photochemically
- oxide layers
- evaporating
- evaporating oxide
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001704 evaporation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10J—PRODUCTION OF PRODUCER GAS, WATER-GAS, SYNTHESIS GAS FROM SOLID CARBONACEOUS MATERIAL, OR MIXTURES CONTAINING THESE GASES; CARBURETTING AIR OR OTHER GASES
- C10J3/00—Production of combustible gases containing carbon monoxide from solid carbonaceous fuels
- C10J3/02—Fixed-bed gasification of lump fuel
- C10J3/20—Apparatus; Plants
- C10J3/34—Grates; Mechanical ash-removing devices
- C10J3/40—Movable grates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/757,562 US4631199A (en) | 1985-07-22 | 1985-07-22 | Photochemical vapor deposition process for depositing oxide layers |
PCT/US1986/001400 WO1987000685A1 (en) | 1985-07-22 | 1986-06-27 | Photochemical vapor deposition process for depositing oxide layers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3671325D1 true DE3671325D1 (de) | 1990-06-21 |
Family
ID=25048305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686904610T Expired - Fee Related DE3671325D1 (de) | 1985-07-22 | 1986-06-27 | Verfahren zum photochemischen aufdampfen von oxydschichten. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4631199A (de) |
EP (1) | EP0231262B1 (de) |
JP (1) | JPS63500390A (de) |
KR (1) | KR930010400B1 (de) |
DE (1) | DE3671325D1 (de) |
HK (1) | HK73792A (de) |
IL (1) | IL79372A0 (de) |
WO (1) | WO1987000685A1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5037514A (en) * | 1986-01-06 | 1991-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Silicon oxide depositing method |
US4753818A (en) * | 1986-07-25 | 1988-06-28 | Hughes Aircraft Company | Process for photochemical vapor deposition of oxide layers at enhanced deposition rates |
GB2202865A (en) * | 1987-03-26 | 1988-10-05 | Plessey Co Plc | Thin film deposition process |
EP0289963A1 (de) * | 1987-05-04 | 1988-11-09 | General Signal Corporation | Vorrichtung und Verfahren zur Erzeugung der Bewegung von einer Substanz zu einem Substrat |
GB8814922D0 (en) * | 1988-06-23 | 1988-07-27 | Pilkington Plc | Coatings on glass |
US5171610A (en) * | 1990-08-28 | 1992-12-15 | The Regents Of The University Of Calif. | Low temperature photochemical vapor deposition of alloy and mixed metal oxide films |
JP2545306B2 (ja) * | 1991-03-11 | 1996-10-16 | 誠 小長井 | ZnO透明導電膜の製造方法 |
JP3670277B2 (ja) | 1991-05-17 | 2005-07-13 | ラム リサーチ コーポレーション | 低い固有応力および/または低い水素含有率をもつSiO▲X▼フィルムの堆積法 |
ES2067410B1 (es) * | 1993-06-10 | 1995-11-01 | Univ Vigo | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
US5456668A (en) * | 1994-01-14 | 1995-10-10 | F. H. Faulding & Co. Limited | Retractable venipuncture catheter needle and receptacle |
WO1996009900A1 (en) * | 1994-09-28 | 1996-04-04 | Midwest Research Institute | Application of optical processing for growth of silicon dioxide |
JP3113797B2 (ja) * | 1995-08-28 | 2000-12-04 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 感光性化学物質膜の改質方法 |
US5800880A (en) * | 1997-03-26 | 1998-09-01 | Tetra Laval Holdings & Finance, S.A. | Process for coating the interior wall of a container with a SiOx barrier layer |
WO2000073534A1 (en) * | 1999-05-28 | 2000-12-07 | Ultramet | Low temperature metal oxide coating formation |
US20040171279A1 (en) * | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America Inc. | Method of low-temperature oxidation of silicon using nitrous oxide |
US20080317974A1 (en) * | 2005-08-26 | 2008-12-25 | Fujifilm Manufacturing Europe B.V. | Method and Arrangement for Generating and Controlling a Discharge Plasma |
JP2009538989A (ja) * | 2006-05-30 | 2009-11-12 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | パルス化大気圧グロー放電を使用する堆積の方法及び装置 |
JP5543203B2 (ja) * | 2006-06-16 | 2014-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置 |
WO2008100139A1 (en) * | 2007-02-13 | 2008-08-21 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
EP2235735B1 (de) * | 2008-02-01 | 2015-09-30 | Fujifilm Manufacturing Europe B.V. | Verfahren und vorrichtung zur plasmaflächenbehandlung eines beweglichen substrats |
JP5473946B2 (ja) * | 2008-02-08 | 2014-04-16 | フジフィルム マニュファクチュアリング ヨーロッパ ビー.ヴィ. | Wvtrバリア性を改善した多層スタック構造体の製造方法 |
US10174424B2 (en) * | 2013-04-25 | 2019-01-08 | Polyvalor, Limited Partnership | Methods for the photo-initiated chemical vapor deposition (PICVD) of coatings and coatings produced by these methods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4002512A (en) * | 1974-09-16 | 1977-01-11 | Western Electric Company, Inc. | Method of forming silicon dioxide |
DE2550371A1 (de) * | 1975-11-10 | 1977-05-12 | Ibm Deutschland | Verfahren zum thermischen oxydieren von silicium |
US4371587A (en) * | 1979-12-17 | 1983-02-01 | Hughes Aircraft Company | Low temperature process for depositing oxide layers by photochemical vapor deposition |
US4419385A (en) * | 1981-09-24 | 1983-12-06 | Hughes Aircraft Company | Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby |
JPS5958819A (ja) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 薄膜形成方法 |
-
1985
- 1985-07-22 US US06/757,562 patent/US4631199A/en not_active Expired - Lifetime
-
1986
- 1986-06-27 DE DE8686904610T patent/DE3671325D1/de not_active Expired - Fee Related
- 1986-06-27 JP JP61503607A patent/JPS63500390A/ja active Pending
- 1986-06-27 WO PCT/US1986/001400 patent/WO1987000685A1/en active IP Right Grant
- 1986-06-27 KR KR1019870700254A patent/KR930010400B1/ko not_active IP Right Cessation
- 1986-06-27 EP EP86904610A patent/EP0231262B1/de not_active Expired - Lifetime
- 1986-07-09 IL IL79372A patent/IL79372A0/xx unknown
-
1992
- 1992-09-24 HK HK737/92A patent/HK73792A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR930010400B1 (ko) | 1993-10-23 |
WO1987000685A1 (en) | 1987-01-29 |
EP0231262B1 (de) | 1990-05-16 |
KR880700456A (ko) | 1988-03-15 |
JPS63500390A (ja) | 1988-02-12 |
IL79372A0 (en) | 1986-10-31 |
US4631199A (en) | 1986-12-23 |
HK73792A (en) | 1992-10-02 |
EP0231262A1 (de) | 1987-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |