DE3689032T2 - Ätzlösung und Ätzverfahren für dotiertes Silizium. - Google Patents

Ätzlösung und Ätzverfahren für dotiertes Silizium.

Info

Publication number
DE3689032T2
DE3689032T2 DE86114540T DE3689032T DE3689032T2 DE 3689032 T2 DE3689032 T2 DE 3689032T2 DE 86114540 T DE86114540 T DE 86114540T DE 3689032 T DE3689032 T DE 3689032T DE 3689032 T2 DE3689032 T2 DE 3689032T2
Authority
DE
Germany
Prior art keywords
etching
silicon
doped
etching solution
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86114540T
Other languages
German (de)
English (en)
Other versions
DE3689032D1 (de
Inventor
Reinhard Glang
Bao Tai Hwang
Wendy Ann Orr-Arienzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3689032D1 publication Critical patent/DE3689032D1/de
Publication of DE3689032T2 publication Critical patent/DE3689032T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P50/642—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H10P50/692—
    • H10P50/694—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
DE86114540T 1985-10-31 1986-10-21 Ätzlösung und Ätzverfahren für dotiertes Silizium. Expired - Fee Related DE3689032T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/793,402 US4681657A (en) 1985-10-31 1985-10-31 Preferential chemical etch for doped silicon

Publications (2)

Publication Number Publication Date
DE3689032D1 DE3689032D1 (de) 1993-10-21
DE3689032T2 true DE3689032T2 (de) 1994-04-14

Family

ID=25159844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86114540T Expired - Fee Related DE3689032T2 (de) 1985-10-31 1986-10-21 Ätzlösung und Ätzverfahren für dotiertes Silizium.

Country Status (4)

Country Link
US (1) US4681657A (enExample)
EP (1) EP0224022B1 (enExample)
JP (1) JPS62106631A (enExample)
DE (1) DE3689032T2 (enExample)

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US6790785B1 (en) * 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
WO2002103752A2 (en) 2000-11-27 2002-12-27 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
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US7153734B2 (en) * 2003-12-29 2006-12-26 Intel Corporation CMOS device with metal and silicide gate electrodes and a method for making it
JP4442446B2 (ja) * 2005-01-27 2010-03-31 信越半導体株式会社 選択エッチング方法
EP1872413A1 (en) * 2005-04-14 2008-01-02 Renewable Energy Corporation ASA Surface passivation of silicon based wafers
US20070207622A1 (en) * 2006-02-23 2007-09-06 Micron Technology, Inc. Highly selective doped oxide etchant
US20070227578A1 (en) * 2006-03-31 2007-10-04 Applied Materials, Inc. Method for patterning a photovoltaic device comprising CIGS material using an etch process
NO20061668L (no) * 2006-04-12 2007-10-15 Renewable Energy Corp Solcelle og fremgangsmate for fremstilling av samme
US7563670B2 (en) * 2006-11-13 2009-07-21 International Business Machines Corporation Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same
US7762152B2 (en) * 2008-02-12 2010-07-27 Honeywell International Inc. Methods for accurately measuring the thickness of an epitaxial layer on a silicon wafer
RU2376676C1 (ru) * 2008-07-17 2009-12-20 Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ обработки кристаллов кремния
US8048807B2 (en) * 2008-09-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for thinning a substrate
KR100997669B1 (ko) 2008-11-04 2010-12-02 엘지전자 주식회사 스크린 인쇄법을 이용한 실리콘 태양전지 및 그 제조방법
JP2014501031A (ja) 2010-10-22 2014-01-16 カリフォルニア インスティチュート オブ テクノロジー 低熱伝導率および熱電性エネルギー転換材料のためのナノメッシュのフォノン性構造
CN102815661A (zh) * 2011-06-07 2012-12-12 无锡华润华晶微电子有限公司 硅膜制备方法
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
CN102338758A (zh) * 2011-08-03 2012-02-01 上海华碧检测技术有限公司 一种双极型晶体管器件掺杂结构的pn结染色方法
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WO2014070795A1 (en) * 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
KR20170026323A (ko) 2014-03-25 2017-03-08 실리시움 에너지, 인크. 열전 디바이스들 및 시스템들
US11322361B2 (en) * 2014-06-10 2022-05-03 International Business Machines Corporation Selective etching of silicon wafer
US9378966B2 (en) * 2014-06-10 2016-06-28 International Business Machines Corporation Selective etching of silicon wafer
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USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
CN111106045A (zh) * 2019-12-31 2020-05-05 中芯集成电路（宁波）有限公司 半导体结构及其加工方法、刻蚀机

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Also Published As

Publication number Publication date
EP0224022A3 (en) 1988-10-05
JPH0311092B2 (enExample) 1991-02-15
JPS62106631A (ja) 1987-05-18
US4681657A (en) 1987-07-21
DE3689032D1 (de) 1993-10-21
EP0224022A2 (en) 1987-06-03
EP0224022B1 (en) 1993-09-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee