DE68912351T2 - Ätzlösung für metallschicht mit photolackstruktur. - Google Patents

Ätzlösung für metallschicht mit photolackstruktur.

Info

Publication number
DE68912351T2
DE68912351T2 DE90901235T DE68912351T DE68912351T2 DE 68912351 T2 DE68912351 T2 DE 68912351T2 DE 90901235 T DE90901235 T DE 90901235T DE 68912351 T DE68912351 T DE 68912351T DE 68912351 T2 DE68912351 T2 DE 68912351T2
Authority
DE
Germany
Prior art keywords
metal layer
etch solution
paint structure
photo paint
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90901235T
Other languages
English (en)
Other versions
DE68912351D1 (de
Inventor
Thomas S Roche
Maureen E Preuss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olin Corp
Original Assignee
Olin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olin Corp filed Critical Olin Corp
Publication of DE68912351D1 publication Critical patent/DE68912351D1/de
Application granted granted Critical
Publication of DE68912351T2 publication Critical patent/DE68912351T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE90901235T 1989-05-04 1989-11-27 Ätzlösung für metallschicht mit photolackstruktur. Expired - Fee Related DE68912351T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/347,128 US4895617A (en) 1989-05-04 1989-05-04 Etchant solution for photoresist-patterned metal layers
PCT/US1989/005264 WO1990013443A1 (en) 1989-05-04 1989-11-27 Etchant solution for photoresist-patterned metal layers

Publications (2)

Publication Number Publication Date
DE68912351D1 DE68912351D1 (de) 1994-02-24
DE68912351T2 true DE68912351T2 (de) 1994-05-05

Family

ID=23362450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90901235T Expired - Fee Related DE68912351T2 (de) 1989-05-04 1989-11-27 Ätzlösung für metallschicht mit photolackstruktur.

Country Status (7)

Country Link
US (1) US4895617A (de)
EP (1) EP0470957B1 (de)
JP (1) JP2919959B2 (de)
KR (1) KR920700939A (de)
AU (1) AU4663289A (de)
DE (1) DE68912351T2 (de)
WO (1) WO1990013443A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4101564A1 (de) * 1991-01-21 1992-07-23 Riedel De Haen Ag Aetzloesung fuer nasschemische prozesse der halbleiterherstellung
JP2734839B2 (ja) * 1991-10-09 1998-04-02 シャープ株式会社 アルミニウム用エッチング液およびエッチング方法並びにアルミニウムエッチング製品
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
US6384001B2 (en) 1997-03-03 2002-05-07 Micron Technology, Inc. Dilute cleaning composition
US6313048B1 (en) 1997-03-03 2001-11-06 Micron Technology, Inc. Dilute cleaning composition and method for using same
US5922123A (en) * 1997-12-17 1999-07-13 Bayer Corporation Method for conditioning organic pigments
US6486108B1 (en) * 2000-05-31 2002-11-26 Micron Technology, Inc. Cleaning composition useful in semiconductor integrated circuit fabrication
KR100420100B1 (ko) * 2001-07-12 2004-03-04 삼성전자주식회사 알루미늄 에천트 조성물
TWI245071B (en) * 2002-04-24 2005-12-11 Mitsubishi Chem Corp Etchant and method of etching
TW200510570A (en) * 2003-08-22 2005-03-16 Arch Spec Chem Inc Novel aqueous based metal etchant
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
JP4283098B2 (ja) * 2003-12-04 2009-06-24 花王株式会社 金属成分の処理液
JP4459857B2 (ja) * 2004-12-09 2010-04-28 東京応化工業株式会社 リソグラフィー用洗浄液及びそれを用いたレジストパターン形成方法
KR101160829B1 (ko) * 2005-02-15 2012-06-29 삼성전자주식회사 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법
KR100688533B1 (ko) * 2005-02-15 2007-03-02 삼성전자주식회사 공정산포,전압 및 온도에 덜민감한 저항-커패시터 발진회로
KR101299131B1 (ko) * 2006-05-10 2013-08-22 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각 조성물
JP4969147B2 (ja) * 2006-05-16 2012-07-04 日本製箔株式会社 フレキシブルプリント配線板の製造方法
JP5363713B2 (ja) * 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
JP5685845B2 (ja) * 2010-07-20 2015-03-18 東ソー株式会社 エッチング用組成物
WO2014171054A1 (ja) * 2013-04-19 2014-10-23 パナソニック株式会社 酸化アルミニウム膜用のエッチング液と、当該エッチング液を用いた薄膜半導体装置の製造方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
WO2016111036A1 (ja) * 2015-01-07 2016-07-14 太陽インキ製造株式会社 金属基材用表面処理剤
KR102460330B1 (ko) * 2017-10-23 2022-10-27 멕크 가부시키가이샤 막형성 기재의 제조 방법, 막형성 기재 및 표면 처리제

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE25953E (en) * 1966-02-22 Process and composition for brightening aluminum
US3715250A (en) * 1971-03-29 1973-02-06 Gen Instrument Corp Aluminum etching solution
US4230522A (en) * 1978-12-26 1980-10-28 Rockwell International Corporation PNAF Etchant for aluminum and silicon
JPS60169583A (ja) * 1984-02-10 1985-09-03 Toyota Motor Corp アルカリ脱脂液およびアルカリ脱脂剤

Also Published As

Publication number Publication date
KR920700939A (ko) 1992-08-10
DE68912351D1 (de) 1994-02-24
AU4663289A (en) 1990-11-29
JPH04506528A (ja) 1992-11-12
JP2919959B2 (ja) 1999-07-19
EP0470957A4 (en) 1992-06-03
WO1990013443A1 (en) 1990-11-15
EP0470957B1 (de) 1994-01-12
US4895617A (en) 1990-01-23
EP0470957A1 (de) 1992-02-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee