DE3689032D1 - Ätzlösung und Ätzverfahren für dotiertes Silizium. - Google Patents
Ätzlösung und Ätzverfahren für dotiertes Silizium.Info
- Publication number
- DE3689032D1 DE3689032D1 DE86114540T DE3689032T DE3689032D1 DE 3689032 D1 DE3689032 D1 DE 3689032D1 DE 86114540 T DE86114540 T DE 86114540T DE 3689032 T DE3689032 T DE 3689032T DE 3689032 D1 DE3689032 D1 DE 3689032D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- doped silicon
- etching process
- etching solution
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/793,402 US4681657A (en) | 1985-10-31 | 1985-10-31 | Preferential chemical etch for doped silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3689032D1 true DE3689032D1 (de) | 1993-10-21 |
DE3689032T2 DE3689032T2 (de) | 1994-04-14 |
Family
ID=25159844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86114540T Expired - Fee Related DE3689032T2 (de) | 1985-10-31 | 1986-10-21 | Ätzlösung und Ätzverfahren für dotiertes Silizium. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4681657A (de) |
EP (1) | EP0224022B1 (de) |
JP (1) | JPS62106631A (de) |
DE (1) | DE3689032T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63215041A (ja) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | 結晶欠陥評価用エツチング液 |
AU602114B2 (en) * | 1987-09-08 | 1990-09-27 | Ebara Solar, Inc. | Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby |
GB8813891D0 (en) * | 1988-06-11 | 1988-07-13 | Micro Image Technology Ltd | Solutions of perhalogenated compounds |
JP2787788B2 (ja) * | 1990-09-26 | 1998-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 残留物除去方法 |
JP3077304B2 (ja) * | 1991-10-09 | 2000-08-14 | 日産自動車株式会社 | エッチング装置 |
DE4305297C2 (de) * | 1993-02-20 | 1998-09-24 | Telefunken Microelectron | Strukturbeize für Halbleiter und deren Anwendung |
KR0131179B1 (ko) * | 1993-02-22 | 1998-04-14 | 슌뻬이 야마자끼 | 전자회로 제조프로세스 |
US5580800A (en) * | 1993-03-22 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of patterning aluminum containing group IIIb Element |
US5486804A (en) * | 1993-12-03 | 1996-01-23 | Hughes Aircraft Company | Integrated magnetoresistive sensor fabrication method and apparatus |
KR950019922A (ko) * | 1993-12-28 | 1995-07-24 | 김주용 | 다결정실리콘 습식식각용액 |
EP0799495A4 (de) * | 1994-11-10 | 1999-11-03 | Lawrence Semiconductor Researc | Silizium-germanium-kohlenstoff-verbindung und dazugehörende prozesse |
US6313048B1 (en) | 1997-03-03 | 2001-11-06 | Micron Technology, Inc. | Dilute cleaning composition and method for using same |
US6514875B1 (en) | 1997-04-28 | 2003-02-04 | The Regents Of The University Of California | Chemical method for producing smooth surfaces on silicon wafers |
US6849557B1 (en) | 1997-04-30 | 2005-02-01 | Micron Technology, Inc. | Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide |
US6277758B1 (en) * | 1998-07-23 | 2001-08-21 | Micron Technology, Inc. | Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher |
US6833084B2 (en) * | 1999-04-05 | 2004-12-21 | Micron Technology, Inc. | Etching compositions |
US6790785B1 (en) * | 2000-09-15 | 2004-09-14 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch porous silicon formation method |
US6762134B2 (en) | 2000-11-27 | 2004-07-13 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch to produce porous group III-V materials |
US6989108B2 (en) * | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | Etchant gas composition |
US6559058B1 (en) * | 2002-01-31 | 2003-05-06 | The Regents Of The University Of California | Method of fabricating three-dimensional components using endpoint detection |
US6770568B2 (en) * | 2002-09-12 | 2004-08-03 | Intel Corporation | Selective etching using sonication |
US6746967B2 (en) * | 2002-09-30 | 2004-06-08 | Intel Corporation | Etching metal using sonication |
US20040188387A1 (en) * | 2003-03-25 | 2004-09-30 | Brask Justin K. | Removing silicon nano-crystals |
DE10344351A1 (de) * | 2003-09-24 | 2005-05-19 | Infineon Technologies Ag | Verfahren zum anisotropen Ätzen von Silizium |
TWI236053B (en) * | 2003-11-25 | 2005-07-11 | Promos Technologies Inc | Method of selectively etching HSG layer in deep trench capacitor fabrication |
US7153734B2 (en) * | 2003-12-29 | 2006-12-26 | Intel Corporation | CMOS device with metal and silicide gate electrodes and a method for making it |
JP4442446B2 (ja) * | 2005-01-27 | 2010-03-31 | 信越半導体株式会社 | 選択エッチング方法 |
EP1872413A1 (de) * | 2005-04-14 | 2008-01-02 | Renewable Energy Corporation ASA | Oberflächenpassivierung von auf silizium basierenden wafern |
US20070207622A1 (en) * | 2006-02-23 | 2007-09-06 | Micron Technology, Inc. | Highly selective doped oxide etchant |
US20070227578A1 (en) * | 2006-03-31 | 2007-10-04 | Applied Materials, Inc. | Method for patterning a photovoltaic device comprising CIGS material using an etch process |
NO20061668L (no) * | 2006-04-12 | 2007-10-15 | Renewable Energy Corp | Solcelle og fremgangsmate for fremstilling av samme |
US7563670B2 (en) * | 2006-11-13 | 2009-07-21 | International Business Machines Corporation | Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same |
US7762152B2 (en) * | 2008-02-12 | 2010-07-27 | Honeywell International Inc. | Methods for accurately measuring the thickness of an epitaxial layer on a silicon wafer |
US8048807B2 (en) * | 2008-09-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for thinning a substrate |
KR100997669B1 (ko) * | 2008-11-04 | 2010-12-02 | 엘지전자 주식회사 | 스크린 인쇄법을 이용한 실리콘 태양전지 및 그 제조방법 |
US9419198B2 (en) | 2010-10-22 | 2016-08-16 | California Institute Of Technology | Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials |
CN102815661A (zh) * | 2011-06-07 | 2012-12-12 | 无锡华润华晶微电子有限公司 | 硅膜制备方法 |
US20130019918A1 (en) | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
CN102338758A (zh) * | 2011-08-03 | 2012-02-01 | 上海华碧检测技术有限公司 | 一种双极型晶体管器件掺杂结构的pn结染色方法 |
US9595653B2 (en) | 2011-10-20 | 2017-03-14 | California Institute Of Technology | Phononic structures and related devices and methods |
US10205080B2 (en) | 2012-01-17 | 2019-02-12 | Matrix Industries, Inc. | Systems and methods for forming thermoelectric devices |
KR20130106151A (ko) * | 2012-03-19 | 2013-09-27 | 에스케이하이닉스 주식회사 | 고종횡비 캐패시터 제조 방법 |
CN104756268B (zh) | 2012-08-17 | 2017-10-24 | 美特瑞克斯实业公司 | 用于形成热电装置的系统和方法 |
WO2014070795A1 (en) * | 2012-10-31 | 2014-05-08 | Silicium Energy, Inc. | Methods for forming thermoelectric elements |
WO2015148554A1 (en) | 2014-03-25 | 2015-10-01 | Silicium Energy, Inc. | Thermoelectric devices and systems |
US11322361B2 (en) * | 2014-06-10 | 2022-05-03 | International Business Machines Corporation | Selective etching of silicon wafer |
US9378966B2 (en) * | 2014-06-10 | 2016-06-28 | International Business Machines Corporation | Selective etching of silicon wafer |
TW201809931A (zh) | 2016-05-03 | 2018-03-16 | 麥崔克斯工業股份有限公司 | 熱電裝置及系統 |
USD819627S1 (en) | 2016-11-11 | 2018-06-05 | Matrix Industries, Inc. | Thermoelectric smartwatch |
CN111106045A (zh) * | 2019-12-31 | 2020-05-05 | 中芯集成电路(宁波)有限公司 | 半导体结构及其加工方法、刻蚀机 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS513474B1 (de) * | 1970-06-25 | 1976-02-03 | ||
NL167277C (nl) * | 1970-08-29 | 1981-11-16 | Philips Nv | Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting. |
JPS5341142B2 (de) * | 1972-09-08 | 1978-10-31 | ||
US3892606A (en) * | 1973-06-28 | 1975-07-01 | Ibm | Method for forming silicon conductive layers utilizing differential etching rates |
DE2359511A1 (de) * | 1973-11-29 | 1975-06-05 | Siemens Ag | Verfahren zum lokalisierten aetzen von siliciumkristallen |
FR2294549A1 (fr) * | 1974-12-09 | 1976-07-09 | Radiotechnique Compelec | Procede de realisation de dispositifs optoelectroniques |
US3997381A (en) * | 1975-01-10 | 1976-12-14 | Intel Corporation | Method of manufacture of an epitaxial semiconductor layer on an insulating substrate |
US4029542A (en) * | 1975-09-19 | 1977-06-14 | Rca Corporation | Method for sloping the sidewalls of multilayer P+ PN+ junction mesa structures |
US4215174A (en) * | 1978-03-24 | 1980-07-29 | General Electric Company | Insulating coating for transformer wires |
US4372803A (en) * | 1980-09-26 | 1983-02-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for etch thinning silicon devices |
US4345969A (en) * | 1981-03-23 | 1982-08-24 | Motorola, Inc. | Metal etch solution and method |
US4512875A (en) * | 1983-05-02 | 1985-04-23 | Union Carbide Corporation | Cracking of crude oils with carbon-hydrogen fragmentation compounds over non-zeolitic catalysts |
JPS6066825A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体装置の製造方法 |
-
1985
- 1985-10-31 US US06/793,402 patent/US4681657A/en not_active Expired - Fee Related
-
1986
- 1986-09-19 JP JP61219901A patent/JPS62106631A/ja active Granted
- 1986-10-21 DE DE86114540T patent/DE3689032T2/de not_active Expired - Fee Related
- 1986-10-21 EP EP86114540A patent/EP0224022B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62106631A (ja) | 1987-05-18 |
EP0224022A3 (en) | 1988-10-05 |
US4681657A (en) | 1987-07-21 |
DE3689032T2 (de) | 1994-04-14 |
EP0224022B1 (de) | 1993-09-15 |
EP0224022A2 (de) | 1987-06-03 |
JPH0311092B2 (de) | 1991-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |