DE69029687T2 - Dotierungsverfahren für Halbleiterbauelemente - Google Patents
Dotierungsverfahren für HalbleiterbauelementeInfo
- Publication number
- DE69029687T2 DE69029687T2 DE69029687T DE69029687T DE69029687T2 DE 69029687 T2 DE69029687 T2 DE 69029687T2 DE 69029687 T DE69029687 T DE 69029687T DE 69029687 T DE69029687 T DE 69029687T DE 69029687 T2 DE69029687 T2 DE 69029687T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor devices
- doping process
- doping
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/048—Energy beam assisted EPI growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/094—Laser beam treatment of compound devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/374,336 US5024967A (en) | 1989-06-30 | 1989-06-30 | Doping procedures for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69029687D1 DE69029687D1 (de) | 1997-02-27 |
DE69029687T2 true DE69029687T2 (de) | 1997-05-07 |
Family
ID=23476343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69029687T Expired - Fee Related DE69029687T2 (de) | 1989-06-30 | 1990-06-20 | Dotierungsverfahren für Halbleiterbauelemente |
Country Status (5)
Country | Link |
---|---|
US (1) | US5024967A (de) |
EP (1) | EP0405832B1 (de) |
JP (1) | JPH0828327B2 (de) |
CA (1) | CA2018976C (de) |
DE (1) | DE69029687T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2560562B2 (ja) * | 1991-04-30 | 1996-12-04 | 住友化学工業株式会社 | エピタキシャル成長化合物半導体結晶 |
JPH081955B2 (ja) * | 1991-08-21 | 1996-01-10 | ヒューズ・エアクラフト・カンパニー | 反転変調ドープされたヘテロ構造の製造方法 |
US5533072A (en) * | 1993-11-12 | 1996-07-02 | International Business Machines Corporation | Digital phase alignment and integrated multichannel transceiver employing same |
JP3347002B2 (ja) * | 1996-11-08 | 2002-11-20 | 株式会社東芝 | 半導体発光素子の製造方法 |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
JP4865047B2 (ja) | 2010-02-24 | 2012-02-01 | 株式会社東芝 | 結晶成長方法 |
JP5238867B2 (ja) * | 2011-11-08 | 2013-07-17 | 株式会社東芝 | 半導体発光素子の製造方法 |
EP3781284A4 (de) | 2018-04-17 | 2022-01-05 | Smartflow Technologies, Inc. | Filterkassettenartikel und filter damit |
CN112924075A (zh) * | 2021-02-26 | 2021-06-08 | 云和县瑞灵玩具有限公司 | 一种木材固定栓松动时的提醒装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1446860A (en) * | 1972-09-09 | 1976-08-18 | Ranco Controls Ltd | Control switch unit |
US3941624A (en) * | 1975-03-28 | 1976-03-02 | Bell Telephone Laboratories, Incorporated | Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy |
JPS5814644B2 (ja) * | 1975-05-14 | 1983-03-22 | 松下電器産業株式会社 | ヒカリデンソウロノセイゾウホウホウ |
JPS5372A (en) * | 1976-06-24 | 1978-01-05 | Agency Of Ind Science & Technol | Selective doping crystal growing method |
FR2388413A1 (fr) * | 1977-04-18 | 1978-11-17 | Commissariat Energie Atomique | Procede de commande de la migration d'une espece chimique dans un substrat solide |
GB2034972B (en) * | 1978-10-11 | 1982-12-22 | Secr Defence | Method of controlling penetration of dopant into semiconductor devices |
US4447276A (en) * | 1981-06-15 | 1984-05-08 | The Post Office | Molecular beam epitaxy electrolytic dopant source |
JPS5958878A (ja) * | 1982-09-28 | 1984-04-04 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
US4766087A (en) * | 1983-08-01 | 1988-08-23 | Union Oil Company Of California | Electrical contacts containing thallium (III) oxide prepared at relatively low temperature |
US4645687A (en) * | 1983-11-10 | 1987-02-24 | At&T Laboratories | Deposition of III-V semiconductor materials |
US4581248A (en) * | 1984-03-07 | 1986-04-08 | Roche Gregory A | Apparatus and method for laser-induced chemical vapor deposition |
US4583110A (en) * | 1984-06-14 | 1986-04-15 | International Business Machines Corporation | Intermetallic semiconductor ohmic contact |
JPH0669025B2 (ja) * | 1984-12-07 | 1994-08-31 | シャープ株式会社 | 半導体結晶成長装置 |
IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
FR2578095B1 (fr) * | 1985-02-28 | 1988-04-15 | Avitaya Francois D | Procede et dispositif de depot par croissance epitaxiale d'un materiau dope |
US4659401A (en) * | 1985-06-10 | 1987-04-21 | Massachusetts Institute Of Technology | Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD) |
JPS62196815A (ja) * | 1986-02-24 | 1987-08-31 | Tadatsugu Ito | 薄膜成長装置 |
JPH0691009B2 (ja) * | 1986-06-24 | 1994-11-14 | 日本電気株式会社 | 半導体薄膜製造方法 |
JPS63138765A (ja) * | 1986-12-01 | 1988-06-10 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
US4829021A (en) * | 1986-12-12 | 1989-05-09 | Daido Sanso K.K. | Process for vacuum chemical epitaxy |
JPS63318784A (ja) * | 1987-06-22 | 1988-12-27 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
US4843031A (en) * | 1987-03-17 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating compound semiconductor laser using selective irradiation |
GB2204066A (en) * | 1987-04-06 | 1988-11-02 | Philips Electronic Associated | A method for manufacturing a semiconductor device having a layered structure |
US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
US4871692A (en) * | 1988-09-30 | 1989-10-03 | Lee Hong H | Passivation of group III-V surfaces |
-
1989
- 1989-06-30 US US07/374,336 patent/US5024967A/en not_active Expired - Lifetime
-
1990
- 1990-06-14 CA CA002018976A patent/CA2018976C/en not_active Expired - Fee Related
- 1990-06-20 DE DE69029687T patent/DE69029687T2/de not_active Expired - Fee Related
- 1990-06-20 EP EP90306751A patent/EP0405832B1/de not_active Expired - Lifetime
- 1990-06-29 JP JP17041090A patent/JPH0828327B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0405832B1 (de) | 1997-01-15 |
CA2018976C (en) | 1994-06-28 |
US5024967A (en) | 1991-06-18 |
JPH0344919A (ja) | 1991-02-26 |
DE69029687D1 (de) | 1997-02-27 |
EP0405832A1 (de) | 1991-01-02 |
CA2018976A1 (en) | 1990-12-31 |
JPH0828327B2 (ja) | 1996-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |