GB2034972B - Method of controlling penetration of dopant into semiconductor devices - Google Patents

Method of controlling penetration of dopant into semiconductor devices

Info

Publication number
GB2034972B
GB2034972B GB7935143A GB7935143A GB2034972B GB 2034972 B GB2034972 B GB 2034972B GB 7935143 A GB7935143 A GB 7935143A GB 7935143 A GB7935143 A GB 7935143A GB 2034972 B GB2034972 B GB 2034972B
Authority
GB
United Kingdom
Prior art keywords
dopant
semiconductor devices
controlling penetration
penetration
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7935143A
Other versions
GB2034972A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB7935143A priority Critical patent/GB2034972B/en
Publication of GB2034972A publication Critical patent/GB2034972A/en
Application granted granted Critical
Publication of GB2034972B publication Critical patent/GB2034972B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB7935143A 1978-10-11 1979-10-10 Method of controlling penetration of dopant into semiconductor devices Expired GB2034972B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7935143A GB2034972B (en) 1978-10-11 1979-10-10 Method of controlling penetration of dopant into semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7840117 1978-10-11
GB7935143A GB2034972B (en) 1978-10-11 1979-10-10 Method of controlling penetration of dopant into semiconductor devices

Publications (2)

Publication Number Publication Date
GB2034972A GB2034972A (en) 1980-06-11
GB2034972B true GB2034972B (en) 1982-12-22

Family

ID=26269147

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7935143A Expired GB2034972B (en) 1978-10-11 1979-10-10 Method of controlling penetration of dopant into semiconductor devices

Country Status (1)

Country Link
GB (1) GB2034972B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024967A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Doping procedures for semiconductor devices

Also Published As

Publication number Publication date
GB2034972A (en) 1980-06-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee