JPS54146982A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS54146982A
JPS54146982A JP5441278A JP5441278A JPS54146982A JP S54146982 A JPS54146982 A JP S54146982A JP 5441278 A JP5441278 A JP 5441278A JP 5441278 A JP5441278 A JP 5441278A JP S54146982 A JPS54146982 A JP S54146982A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5441278A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHO LSI GIJUTSU KENKYU KUMIAI
Priority to JP5441278A priority Critical patent/JPS54146982A/en
Publication of JPS54146982A publication Critical patent/JPS54146982A/en
Pending legal-status Critical Current

Links

JP5441278A 1978-05-10 1978-05-10 Method of fabricating semiconductor device Pending JPS54146982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5441278A JPS54146982A (en) 1978-05-10 1978-05-10 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5441278A JPS54146982A (en) 1978-05-10 1978-05-10 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS54146982A true JPS54146982A (en) 1979-11-16

Family

ID=12969978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5441278A Pending JPS54146982A (en) 1978-05-10 1978-05-10 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS54146982A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828871A (en) * 1981-08-12 1983-02-19 Toshiba Corp Manufacture of silicon thin film semiconductor device
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
JPH0521460A (en) * 1990-12-25 1993-01-29 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US6838698B1 (en) 1990-12-25 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having source/channel or drain/channel boundary regions
US7253437B2 (en) 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828871A (en) * 1981-08-12 1983-02-19 Toshiba Corp Manufacture of silicon thin film semiconductor device
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
JPH0521460A (en) * 1990-12-25 1993-01-29 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US6838698B1 (en) 1990-12-25 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having source/channel or drain/channel boundary regions
US7253437B2 (en) 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
US7375375B2 (en) 1990-12-25 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

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