JPS54146982A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS54146982A JPS54146982A JP5441278A JP5441278A JPS54146982A JP S54146982 A JPS54146982 A JP S54146982A JP 5441278 A JP5441278 A JP 5441278A JP 5441278 A JP5441278 A JP 5441278A JP S54146982 A JPS54146982 A JP S54146982A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fabricating semiconductor
- fabricating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5441278A JPS54146982A (en) | 1978-05-10 | 1978-05-10 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5441278A JPS54146982A (en) | 1978-05-10 | 1978-05-10 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54146982A true JPS54146982A (en) | 1979-11-16 |
Family
ID=12969978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5441278A Pending JPS54146982A (en) | 1978-05-10 | 1978-05-10 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54146982A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5828871A (en) * | 1981-08-12 | 1983-02-19 | Toshiba Corp | Manufacture of silicon thin film semiconductor device |
US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
JPH0521460A (en) * | 1990-12-25 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
US6838698B1 (en) | 1990-12-25 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having source/channel or drain/channel boundary regions |
US7253437B2 (en) | 1990-12-25 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a thin film transistor |
-
1978
- 1978-05-10 JP JP5441278A patent/JPS54146982A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5828871A (en) * | 1981-08-12 | 1983-02-19 | Toshiba Corp | Manufacture of silicon thin film semiconductor device |
US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
JPH0521460A (en) * | 1990-12-25 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
US6838698B1 (en) | 1990-12-25 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having source/channel or drain/channel boundary regions |
US7253437B2 (en) | 1990-12-25 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a thin film transistor |
US7375375B2 (en) | 1990-12-25 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
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