DE3684429D1 - Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information. - Google Patents

Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information.

Info

Publication number
DE3684429D1
DE3684429D1 DE8686402853T DE3684429T DE3684429D1 DE 3684429 D1 DE3684429 D1 DE 3684429D1 DE 8686402853 T DE8686402853 T DE 8686402853T DE 3684429 T DE3684429 T DE 3684429T DE 3684429 D1 DE3684429 D1 DE 3684429D1
Authority
DE
Germany
Prior art keywords
specific information
storing specific
semiconductor memory
memory element
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686402853T
Other languages
German (de)
English (en)
Inventor
Masanobu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3684429D1 publication Critical patent/DE3684429D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/18—Circuits for erasing optically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
DE8686402853T 1985-12-18 1986-12-18 Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information. Expired - Lifetime DE3684429D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60282739A JPS62143476A (ja) 1985-12-18 1985-12-18 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3684429D1 true DE3684429D1 (de) 1992-04-23

Family

ID=17656418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686402853T Expired - Lifetime DE3684429D1 (de) 1985-12-18 1986-12-18 Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information.

Country Status (5)

Country Link
US (1) US4758984A (enExample)
EP (1) EP0227549B1 (enExample)
JP (1) JPS62143476A (enExample)
KR (1) KR900003027B1 (enExample)
DE (1) DE3684429D1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229600A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
JPH061840B2 (ja) * 1987-07-08 1994-01-05 日本電気株式会社 光遮へい型ｕｐｒｏｍ
FR2623651B1 (fr) * 1987-11-20 1992-11-27 Sgs Thomson Microelectronics Plan memoire et procede et prototype de definition d'un circuit integre electronique comportant un tel plan memoire
US5253200A (en) * 1987-12-15 1993-10-12 Sony Corporation Electrically erasable and programmable read only memory using stacked-gate cell
JP2567025B2 (ja) * 1988-03-31 1996-12-25 株式会社東芝 半導体集積回路
EP0357333B1 (en) * 1988-09-01 1994-12-28 Atmel Corporation Sealed charge storage structure
JPH0777239B2 (ja) * 1988-09-22 1995-08-16 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
JP2704534B2 (ja) * 1988-12-16 1998-01-26 日本電信電話株式会社 アナログ・デジタル混在ｌｓｉ
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
GB2229575B (en) * 1989-03-22 1993-05-12 Intel Corp Method of reducing hot-electron degradation in semiconductor devices
IT1229168B (it) * 1989-04-10 1991-07-22 Sgs Thomson Microelecyronics S Cella di memoria uprom con struttura compatibile con la fabbricazione di matrici di celle eprom a tovaglia con linee di source e drain autoallineate, e processo per la sua fabbricazione
JPH02295171A (ja) * 1989-05-09 1990-12-06 Fujitsu Ltd 半導体装置及びその製造方法
JPH02308572A (ja) * 1989-05-23 1990-12-21 Toshiba Corp 半導体記憶装置のプログラム方法
EP0409107B1 (en) * 1989-07-18 1996-09-25 Sony Corporation A nonvolatile semiconductor memory device and a method of manufacturing thereof
FR2656156A1 (fr) * 1989-12-16 1991-06-21 Sgs Thomson Microelectronics Circuit integre entierement protege des rayons ultra-violets.
US5053992A (en) * 1990-10-04 1991-10-01 General Instrument Corporation Prevention of inspection of secret data stored in encapsulated integrated circuit chip
US5050123A (en) * 1990-11-13 1991-09-17 Intel Corporation Radiation shield for EPROM cells
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
US5338969A (en) * 1991-06-27 1994-08-16 Texas Instruments, Incorporated Unerasable programmable read-only memory
JPH05243581A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 不揮発性メモリ装置
EP0576773B1 (en) * 1992-06-30 1995-09-13 STMicroelectronics S.r.l. Integrated circuit entirely protected against ultraviolet rays
US5703808A (en) * 1996-02-21 1997-12-30 Motorola, Inc. Non-volatile memory cell and method of programming
JP3037191B2 (ja) * 1997-04-22 2000-04-24 日本電気アイシーマイコンシステム株式会社 半導体装置
US6774432B1 (en) 2003-02-05 2004-08-10 Advanced Micro Devices, Inc. UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
US7311385B2 (en) * 2003-11-12 2007-12-25 Lexmark International, Inc. Micro-fluid ejecting device having embedded memory device
DE102004047663B4 (de) * 2004-09-30 2007-07-19 Infineon Technologies Ag Speicherschaltung mit einer Initialisierungseinheit, sowie Verfahren zum Optimieren von Datenempfangsparametern in einem Speichercontroller
JP4952954B2 (ja) * 2008-11-27 2012-06-13 セイコーエプソン株式会社 半導体装置
US9406621B2 (en) 2010-06-10 2016-08-02 Texas Instruments Incorporated Ultraviolet energy shield for non-volatile charge storage memory
CN102314036A (zh) * 2010-06-29 2012-01-11 普诚科技股份有限公司 抗紫外光的电子装置及其制法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582439B2 (ja) * 1978-11-27 1983-01-17 富士通株式会社 ブ−トストラツプ回路
JPS58197777A (ja) * 1982-05-12 1983-11-17 Mitsubishi Electric Corp 半導体不揮発性記憶装置
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
US4530074A (en) * 1982-06-17 1985-07-16 Intel Corporation Radiation shield for a portion of a radiation sensitive integrated circuit
JPS596581A (ja) * 1982-07-02 1984-01-13 Mitsubishi Electric Corp 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
US4758984A (en) 1988-07-19
KR900003027B1 (ko) 1990-05-04
EP0227549A3 (en) 1988-04-27
JPS62143476A (ja) 1987-06-26
KR870006578A (ko) 1987-07-13
JPS6366071B2 (enExample) 1988-12-19
EP0227549A2 (en) 1987-07-01
EP0227549B1 (en) 1992-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee