DE3684429D1 - Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information. - Google Patents
Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information.Info
- Publication number
- DE3684429D1 DE3684429D1 DE8686402853T DE3684429T DE3684429D1 DE 3684429 D1 DE3684429 D1 DE 3684429D1 DE 8686402853 T DE8686402853 T DE 8686402853T DE 3684429 T DE3684429 T DE 3684429T DE 3684429 D1 DE3684429 D1 DE 3684429D1
- Authority
- DE
- Germany
- Prior art keywords
- specific information
- storing specific
- semiconductor memory
- memory element
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/18—Circuits for erasing optically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60282739A JPS62143476A (ja) | 1985-12-18 | 1985-12-18 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3684429D1 true DE3684429D1 (de) | 1992-04-23 |
Family
ID=17656418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686402853T Expired - Fee Related DE3684429D1 (de) | 1985-12-18 | 1986-12-18 | Halbleiterspeicheranordnung mit einem nurlesespeicherelement zum speichern von bestimmter information. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4758984A (de) |
EP (1) | EP0227549B1 (de) |
JP (1) | JPS62143476A (de) |
KR (1) | KR900003027B1 (de) |
DE (1) | DE3684429D1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229600A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
US5448517A (en) * | 1987-06-29 | 1995-09-05 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
JPH061840B2 (ja) * | 1987-07-08 | 1994-01-05 | 日本電気株式会社 | 光遮へい型uprom |
FR2623651B1 (fr) * | 1987-11-20 | 1992-11-27 | Sgs Thomson Microelectronics | Plan memoire et procede et prototype de definition d'un circuit integre electronique comportant un tel plan memoire |
US5253200A (en) * | 1987-12-15 | 1993-10-12 | Sony Corporation | Electrically erasable and programmable read only memory using stacked-gate cell |
JP2567025B2 (ja) * | 1988-03-31 | 1996-12-25 | 株式会社東芝 | 半導体集積回路 |
DE68920236T2 (de) * | 1988-09-01 | 1995-05-04 | Atmel Corp | Versiegelte Ladungsspeicheranordnung. |
JPH0777239B2 (ja) * | 1988-09-22 | 1995-08-16 | 日本電気株式会社 | 浮遊ゲート型不揮発性半導体記憶装置 |
JPH02168666A (ja) * | 1988-09-29 | 1990-06-28 | Mitsubishi Electric Corp | 相補型半導体装置とその製造方法 |
KR910007434B1 (ko) * | 1988-12-15 | 1991-09-26 | 삼성전자 주식회사 | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 |
JP2704534B2 (ja) * | 1988-12-16 | 1998-01-26 | 日本電信電話株式会社 | アナログ・デジタル混在lsi |
GB2229575B (en) * | 1989-03-22 | 1993-05-12 | Intel Corp | Method of reducing hot-electron degradation in semiconductor devices |
US5229311A (en) * | 1989-03-22 | 1993-07-20 | Intel Corporation | Method of reducing hot-electron degradation in semiconductor devices |
IT1229168B (it) * | 1989-04-10 | 1991-07-22 | Sgs Thomson Microelecyronics S | Cella di memoria uprom con struttura compatibile con la fabbricazione di matrici di celle eprom a tovaglia con linee di source e drain autoallineate, e processo per la sua fabbricazione |
JPH02295171A (ja) * | 1989-05-09 | 1990-12-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH02308572A (ja) * | 1989-05-23 | 1990-12-21 | Toshiba Corp | 半導体記憶装置のプログラム方法 |
EP0642168B1 (de) * | 1989-07-18 | 1998-09-23 | Sony Corporation | Nichtflüchtige Halbleiterspeicheranordnung |
FR2656156A1 (fr) * | 1989-12-16 | 1991-06-21 | Sgs Thomson Microelectronics | Circuit integre entierement protege des rayons ultra-violets. |
US5053992A (en) * | 1990-10-04 | 1991-10-01 | General Instrument Corporation | Prevention of inspection of secret data stored in encapsulated integrated circuit chip |
US5050123A (en) * | 1990-11-13 | 1991-09-17 | Intel Corporation | Radiation shield for EPROM cells |
US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
US5338969A (en) * | 1991-06-27 | 1994-08-16 | Texas Instruments, Incorporated | Unerasable programmable read-only memory |
JPH05243581A (ja) * | 1992-02-28 | 1993-09-21 | Mitsubishi Electric Corp | 不揮発性メモリ装置 |
DE69204829T2 (de) * | 1992-06-30 | 1996-02-22 | Sgs Thomson Microelectronics | Integrierte Schaltung mit vollständigem Schutz gegen Ultraviolettstrahlen. |
US5703808A (en) * | 1996-02-21 | 1997-12-30 | Motorola, Inc. | Non-volatile memory cell and method of programming |
JP3037191B2 (ja) * | 1997-04-22 | 2000-04-24 | 日本電気アイシーマイコンシステム株式会社 | 半導体装置 |
US6774432B1 (en) | 2003-02-05 | 2004-08-10 | Advanced Micro Devices, Inc. | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL |
US7311385B2 (en) * | 2003-11-12 | 2007-12-25 | Lexmark International, Inc. | Micro-fluid ejecting device having embedded memory device |
DE102004047663B4 (de) * | 2004-09-30 | 2007-07-19 | Infineon Technologies Ag | Speicherschaltung mit einer Initialisierungseinheit, sowie Verfahren zum Optimieren von Datenempfangsparametern in einem Speichercontroller |
JP4952954B2 (ja) * | 2008-11-27 | 2012-06-13 | セイコーエプソン株式会社 | 半導体装置 |
US9406621B2 (en) | 2010-06-10 | 2016-08-02 | Texas Instruments Incorporated | Ultraviolet energy shield for non-volatile charge storage memory |
CN102314036A (zh) * | 2010-06-29 | 2012-01-11 | 普诚科技股份有限公司 | 抗紫外光的电子装置及其制法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582439B2 (ja) * | 1978-11-27 | 1983-01-17 | 富士通株式会社 | ブ−トストラツプ回路 |
JPS58197777A (ja) * | 1982-05-12 | 1983-11-17 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
US4519050A (en) * | 1982-06-17 | 1985-05-21 | Intel Corporation | Radiation shield for an integrated circuit memory with redundant elements |
US4530074A (en) * | 1982-06-17 | 1985-07-16 | Intel Corporation | Radiation shield for a portion of a radiation sensitive integrated circuit |
JPS596581A (ja) * | 1982-07-02 | 1984-01-13 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
-
1985
- 1985-12-18 JP JP60282739A patent/JPS62143476A/ja active Granted
-
1986
- 1986-12-15 US US06/941,865 patent/US4758984A/en not_active Expired - Lifetime
- 1986-12-17 KR KR1019860010831A patent/KR900003027B1/ko not_active IP Right Cessation
- 1986-12-18 DE DE8686402853T patent/DE3684429D1/de not_active Expired - Fee Related
- 1986-12-18 EP EP86402853A patent/EP0227549B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0227549A3 (en) | 1988-04-27 |
KR870006578A (ko) | 1987-07-13 |
JPS6366071B2 (de) | 1988-12-19 |
EP0227549B1 (de) | 1992-03-18 |
EP0227549A2 (de) | 1987-07-01 |
JPS62143476A (ja) | 1987-06-26 |
KR900003027B1 (ko) | 1990-05-04 |
US4758984A (en) | 1988-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |