DE3586810T2 - Halbleiterschaltung. - Google Patents

Halbleiterschaltung.

Info

Publication number
DE3586810T2
DE3586810T2 DE8585305971T DE3586810T DE3586810T2 DE 3586810 T2 DE3586810 T2 DE 3586810T2 DE 8585305971 T DE8585305971 T DE 8585305971T DE 3586810 T DE3586810 T DE 3586810T DE 3586810 T2 DE3586810 T2 DE 3586810T2
Authority
DE
Germany
Prior art keywords
circuit
output
transistor
gate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585305971T
Other languages
German (de)
English (en)
Other versions
DE3586810D1 (de
Inventor
Atsushi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3586810D1 publication Critical patent/DE3586810D1/de
Application granted granted Critical
Publication of DE3586810T2 publication Critical patent/DE3586810T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/033—Monostable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/355—Monostable circuits

Landscapes

  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE8585305971T 1984-08-23 1985-08-22 Halbleiterschaltung. Expired - Fee Related DE3586810T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59175392A JPS6154098A (ja) 1984-08-23 1984-08-23 パルス発生回路

Publications (2)

Publication Number Publication Date
DE3586810D1 DE3586810D1 (de) 1992-12-17
DE3586810T2 true DE3586810T2 (de) 1993-03-25

Family

ID=15995292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585305971T Expired - Fee Related DE3586810T2 (de) 1984-08-23 1985-08-22 Halbleiterschaltung.

Country Status (5)

Country Link
US (1) US4710904A (enExample)
EP (1) EP0176226B1 (enExample)
JP (1) JPS6154098A (enExample)
KR (1) KR910002498B1 (enExample)
DE (1) DE3586810T2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985643A (en) * 1988-06-24 1991-01-15 National Semiconductor Corporation Speed enhancement technique for CMOS circuits
EP0347759B1 (en) * 1988-06-24 1994-08-10 National Semiconductor Corporation Speed enhancement technique for CMOS circuits
GB2226725A (en) * 1988-12-14 1990-07-04 Philips Nv Pulse generator circuit arrangement
IL96808A (en) 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
EP1022641B2 (en) * 1990-04-18 2015-07-01 Rambus Inc. System containing a plurality of DRAMS and a bus
US6751696B2 (en) 1990-04-18 2004-06-15 Rambus Inc. Memory device having a programmable register
US5371780A (en) * 1990-10-01 1994-12-06 At&T Corp. Communications resource assignment in a wireless telecommunications system
US5199002A (en) * 1990-10-01 1993-03-30 Integrated Device Technology, Inc. SRAM-address-change-detection circuit
JPH0541088A (ja) * 1991-08-06 1993-02-19 Nec Ic Microcomput Syst Ltd 半導体集積回路
JP3381938B2 (ja) * 1992-06-05 2003-03-04 株式会社東芝 入力遷移検知パルス発生回路
JP3277603B2 (ja) * 1993-05-19 2002-04-22 富士通株式会社 半導体記憶装置
US5590089A (en) * 1995-07-25 1996-12-31 Micron Quantum Devices Inc. Address transition detection (ATD) circuit
JPH11112304A (ja) * 1997-10-07 1999-04-23 Fujitsu Ltd パルス幅制御論理回路
KR100350766B1 (ko) * 1999-11-22 2002-08-28 주식회사 하이닉스반도체 펄스 발생기
US6380779B1 (en) * 2001-07-12 2002-04-30 Hewlett-Packard Company Edge-triggered, self-resetting pulse generator
US11446236B2 (en) 2015-08-05 2022-09-20 Cmpd Licensing, Llc Topical antimicrobial compositions and methods of formulating the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601636A (en) * 1969-06-23 1971-08-24 Mohawk Data Sciences Corp Single-shot device
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
US4405996A (en) * 1981-02-06 1983-09-20 Rca Corporation Precharge with power conservation
US4425514A (en) * 1981-11-10 1984-01-10 Rca Corporation Fixed pulse width, fast recovery one-shot pulse generator
JPS5958688A (ja) * 1982-09-29 1984-04-04 Fujitsu Ltd デコ−ダ回路
JPS5963094A (ja) * 1982-10-04 1984-04-10 Fujitsu Ltd メモリ装置
US4583008A (en) * 1983-02-25 1986-04-15 Harris Corporation Retriggerable edge detector for edge-actuated internally clocked parts
US4614883A (en) * 1983-12-01 1986-09-30 Motorola, Inc. Address transition pulse circuit

Also Published As

Publication number Publication date
DE3586810D1 (de) 1992-12-17
EP0176226A2 (en) 1986-04-02
JPH0453035B2 (enExample) 1992-08-25
KR870002655A (ko) 1987-04-06
JPS6154098A (ja) 1986-03-18
US4710904A (en) 1987-12-01
KR910002498B1 (ko) 1991-04-23
EP0176226A3 (en) 1988-08-24
EP0176226B1 (en) 1992-11-11

Similar Documents

Publication Publication Date Title
DE69533678T2 (de) Technik zur schnellen Übertragung in CMOS integrierte Schaltungen
DE3586810T2 (de) Halbleiterschaltung.
DE4126474C2 (enExample)
DE10322364B4 (de) Datenpuffer und Halbleiterspeicher sowie zugehöriges Verfahren zur Verzögerungszeitsteuerung
DE3853814T2 (de) Integrierte Halbleiterschaltung.
DE19549532B4 (de) Synchrone Halbleiterspeichervorrichtung mit Selbstvorladefunktion
DE69419575T2 (de) Integrierte Halbleiterschaltungsanordnung
DE3885532T2 (de) Halbleiter-Speicherschaltung mit einer Verzögerungsschaltung.
DE68910994T2 (de) Schaltung zur Einstellung des Betriebsmodus für DRAM-Speicher.
DE3007155C2 (de) Speichervorrichtung
DE69022537T2 (de) Halbleiterspeicheranordnung.
DE69126697T2 (de) Pegelumsetzschaltung
DE69523547T2 (de) Einstellbare Stromquelle
DE69411335T2 (de) Verstärkerschaltung des Flipflop-Typs
DE4207999A1 (de) Adresseingabepuffereinrichtung
DE3203825A1 (de) Signalverarbeitungsschaltung
DE4004771C2 (enExample)
DE19944727B4 (de) Integrierte Schaltung und synchrones Halbleiterspeicherbauelement mit einer Takterzeugungsschaltung
DE69131118T2 (de) Halbleitereinheit
DE3875319T2 (de) Logische schaltung mit bipolar- und cmos-halbleitern und anwendung dieser schaltung bei halbleiterspeicherschaltungen.
DE69619679T2 (de) Eine integrierte schaltung mit freigabesteuerschaltung
DE4333765A1 (de) Halbleiterspeichervorrichtung
EP0111741A2 (de) Integrierte Halbleiterschaltung mit einem dynamischen Schreib-Lese-Speicher
DE2141680A1 (de) Zeitgeberanordnung
DE4018296A1 (de) Elektrische schaltung fuer einen parallelschreibtest eines breiten mehrfachbytes in einer halbleiterspeichereinrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee