DE3875319T2 - Logische schaltung mit bipolar- und cmos-halbleitern und anwendung dieser schaltung bei halbleiterspeicherschaltungen. - Google Patents
Logische schaltung mit bipolar- und cmos-halbleitern und anwendung dieser schaltung bei halbleiterspeicherschaltungen.Info
- Publication number
- DE3875319T2 DE3875319T2 DE8888402879T DE3875319T DE3875319T2 DE 3875319 T2 DE3875319 T2 DE 3875319T2 DE 8888402879 T DE8888402879 T DE 8888402879T DE 3875319 T DE3875319 T DE 3875319T DE 3875319 T2 DE3875319 T2 DE 3875319T2
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- bipolar
- application
- semiconductor memory
- memory circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0021—Modifications of threshold
- H03K19/0027—Modifications of threshold in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62288730A JP2593894B2 (ja) | 1987-11-16 | 1987-11-16 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3875319D1 DE3875319D1 (de) | 1992-11-19 |
DE3875319T2 true DE3875319T2 (de) | 1993-02-25 |
Family
ID=17733943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888402879T Expired - Fee Related DE3875319T2 (de) | 1987-11-16 | 1988-11-16 | Logische schaltung mit bipolar- und cmos-halbleitern und anwendung dieser schaltung bei halbleiterspeicherschaltungen. |
Country Status (5)
Country | Link |
---|---|
US (2) | US4906868A (de) |
EP (1) | EP0317430B1 (de) |
JP (1) | JP2593894B2 (de) |
KR (1) | KR910009443B1 (de) |
DE (1) | DE3875319T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2593894B2 (ja) * | 1987-11-16 | 1997-03-26 | 富士通株式会社 | 半導体記憶装置 |
JPH0239719A (ja) * | 1988-07-29 | 1990-02-08 | Fujitsu Ltd | 半導体回路 |
JPH07120937B2 (ja) * | 1988-11-08 | 1995-12-20 | 日本電気株式会社 | インバータ回路 |
JPH02246151A (ja) * | 1989-03-20 | 1990-10-01 | Hitachi Ltd | 抵抗手段と論理回路、入力回路、ヒューズ切断回路、駆動回路、電源回路、静電保護回路及びこれらを含む半導体記憶装置ならびにそのレイアウト方式及びテスト方式 |
EP0403075B1 (de) * | 1989-05-15 | 1996-04-17 | Texas Instruments Incorporated | BICMOS-Hochleistungsschaltkreis mit voller Ausgangsspannungsschwingung |
JPH02303216A (ja) * | 1989-05-17 | 1990-12-17 | Fujitsu Ltd | 半導体集積回路 |
US5006736A (en) * | 1989-06-13 | 1991-04-09 | Motorola, Inc. | Control circuit for rapid gate discharge |
US4970414A (en) * | 1989-07-07 | 1990-11-13 | Silicon Connections Corporation | TTL-level-output interface circuit |
JP2546904B2 (ja) * | 1990-01-31 | 1996-10-23 | 三菱電機株式会社 | 半導体論理回路 |
US5047980A (en) * | 1990-08-17 | 1991-09-10 | Unisys Corporation | BiCMOS memory having memory cells connected directly to address decoders |
JP2569986B2 (ja) * | 1991-03-20 | 1997-01-08 | 富士通株式会社 | 半導体記憶装置 |
US5257226A (en) * | 1991-12-17 | 1993-10-26 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit with self-biased differential data lines |
JP3193218B2 (ja) * | 1993-12-21 | 2001-07-30 | 株式会社東芝 | 半導体論理回路 |
US5563543A (en) * | 1994-12-14 | 1996-10-08 | Philips Electronics North America Corporation | Low-voltage BiCMOS digital delay chain suitable for operation over a wide power supply range |
US5777510A (en) * | 1996-02-21 | 1998-07-07 | Integrated Device Technology, Inc. | High voltage tolerable pull-up driver and method for operating same |
US5933034A (en) * | 1996-03-01 | 1999-08-03 | Texas Instruments Incorporated | High speed biCMOS gate driver for MOSFETs incorporating improved injection immunity |
JP6993572B2 (ja) * | 2018-01-25 | 2022-01-13 | 富士通株式会社 | 電子回路、半導体装置及びスイッチング電源装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60125015A (ja) * | 1983-12-12 | 1985-07-04 | Hitachi Ltd | インバ−タ回路 |
JPH0616585B2 (ja) * | 1983-12-16 | 1994-03-02 | 株式会社日立製作所 | バツフア回路 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
EP0433271A3 (en) * | 1985-07-22 | 1991-11-06 | Hitachi, Ltd. | Semiconductor device |
JPS62221219A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 論理回路 |
JPS6362411A (ja) * | 1986-09-02 | 1988-03-18 | Nec Corp | 半導体回路 |
JP2585599B2 (ja) * | 1987-06-05 | 1997-02-26 | 株式会社日立製作所 | 出力インタ−フエ−ス回路 |
JP2593894B2 (ja) * | 1987-11-16 | 1997-03-26 | 富士通株式会社 | 半導体記憶装置 |
-
1987
- 1987-11-16 JP JP62288730A patent/JP2593894B2/ja not_active Expired - Fee Related
-
1988
- 1988-11-10 US US07/269,413 patent/US4906868A/en not_active Expired - Lifetime
- 1988-11-16 KR KR1019880015061A patent/KR910009443B1/ko not_active IP Right Cessation
- 1988-11-16 EP EP88402879A patent/EP0317430B1/de not_active Expired - Lifetime
- 1988-11-16 DE DE8888402879T patent/DE3875319T2/de not_active Expired - Fee Related
-
1989
- 1989-12-19 US US07/452,421 patent/US4961170A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR890008837A (ko) | 1989-07-12 |
EP0317430A3 (en) | 1990-02-07 |
US4961170A (en) | 1990-10-02 |
DE3875319D1 (de) | 1992-11-19 |
EP0317430B1 (de) | 1992-10-14 |
JP2593894B2 (ja) | 1997-03-26 |
EP0317430A2 (de) | 1989-05-24 |
JPH01130387A (ja) | 1989-05-23 |
US4906868A (en) | 1990-03-06 |
KR910009443B1 (ko) | 1991-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |