DE3871663T2 - Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis. - Google Patents
Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis.Info
- Publication number
- DE3871663T2 DE3871663T2 DE8888112319T DE3871663T DE3871663T2 DE 3871663 T2 DE3871663 T2 DE 3871663T2 DE 8888112319 T DE8888112319 T DE 8888112319T DE 3871663 T DE3871663 T DE 3871663T DE 3871663 T2 DE3871663 T2 DE 3871663T2
- Authority
- DE
- Germany
- Prior art keywords
- ccd
- manufacturing process
- peripheral circuit
- semiconductor components
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192069A JPS6436073A (en) | 1987-07-31 | 1987-07-31 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3871663D1 DE3871663D1 (de) | 1992-07-09 |
DE3871663T2 true DE3871663T2 (de) | 1992-12-10 |
Family
ID=16285110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888112319T Expired - Lifetime DE3871663T2 (de) | 1987-07-31 | 1988-07-29 | Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4859624A (de) |
EP (1) | EP0305742B1 (de) |
JP (1) | JPS6436073A (de) |
DE (1) | DE3871663T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01194348A (ja) * | 1988-01-28 | 1989-08-04 | Nec Corp | 半導体装置 |
US5286986A (en) * | 1989-04-13 | 1994-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device having CCD and its peripheral bipolar transistors |
JPH0770703B2 (ja) * | 1989-05-22 | 1995-07-31 | 株式会社東芝 | 電荷転送デバイスを含む半導体装置およびその製造方法 |
US5198880A (en) * | 1989-06-22 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit and method of making the same |
JPH07105458B2 (ja) * | 1989-11-21 | 1995-11-13 | 株式会社東芝 | 複合型集積回路素子 |
US5260228A (en) * | 1990-01-19 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors |
US5021858A (en) * | 1990-05-25 | 1991-06-04 | Hall John H | Compound modulated integrated transistor structure |
US5241198A (en) * | 1990-11-26 | 1993-08-31 | Matsushita Electronics Corporation | Charge-coupled device and solid-state imaging device |
JP2642523B2 (ja) * | 1991-03-19 | 1997-08-20 | 株式会社東芝 | 電荷結合素子を持つ半導体集積回路装置の製造方法 |
US6366322B1 (en) * | 1991-04-15 | 2002-04-02 | Lg Semicon Co., Ltd. | Horizontal charge coupled device of CCD image sensor |
US5357548A (en) * | 1992-11-04 | 1994-10-18 | Xerox Corporation | Reversible charge transfer and logic utilizing them |
US5471515A (en) * | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
USRE42918E1 (en) | 1994-01-28 | 2011-11-15 | California Institute Of Technology | Single substrate camera device with CMOS image sensor |
US6021172A (en) * | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
US6570617B2 (en) | 1994-01-28 | 2003-05-27 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
JP3031815B2 (ja) * | 1994-04-01 | 2000-04-10 | シャープ株式会社 | 電荷検出素子及びその製造方法並びに電荷転送検出装置 |
KR0148734B1 (ko) * | 1995-06-22 | 1998-08-01 | 문정환 | 시시디 촬상소자 제조방법 |
US5900654A (en) * | 1995-07-17 | 1999-05-04 | Spratt; James P. | Radiation hardened charge coupled device |
US6147366A (en) * | 1999-02-08 | 2000-11-14 | Intel Corporation | On chip CMOS optical element |
US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
KR100770299B1 (ko) * | 2001-11-28 | 2007-10-25 | 주식회사 포스코 | 바코드 인식이 가능한 코일 리프터 장치 |
JP2006041196A (ja) * | 2004-07-27 | 2006-02-09 | Nec Electronics Corp | 固体撮像素子およびその製造方法 |
KR100624341B1 (ko) * | 2004-09-22 | 2006-09-15 | (주)아이디에스 | 시시디 고체촬상소자 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047215A (en) * | 1975-01-31 | 1977-09-06 | Texas Instruments Incorporated | Uniphase charge coupled devices |
US4024563A (en) * | 1975-09-02 | 1977-05-17 | Texas Instruments Incorporated | Doped oxide buried channel charge-coupled device |
US4216574A (en) * | 1978-06-29 | 1980-08-12 | Raytheon Company | Charge coupled device |
JPS5586155A (en) * | 1978-12-22 | 1980-06-28 | Toshiba Corp | Semiconductor device having protective circuit |
US4285000A (en) * | 1979-03-12 | 1981-08-18 | Rockwell International Corporation | Buried channel charge coupled device with semi-insulating substrate |
JPS5619666A (en) * | 1979-07-27 | 1981-02-24 | Nec Corp | Driving means of charge coupled element |
NL186416C (nl) * | 1981-06-05 | 1990-11-16 | Philips Nv | Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. |
US4362575A (en) * | 1981-08-27 | 1982-12-07 | Rca Corporation | Method of making buried channel charge coupled device with means for controlling excess charge |
JPS58128767A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Corp | 電荷転送装置の製造方法 |
JPS58140162A (ja) * | 1982-02-16 | 1983-08-19 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS6035572A (ja) * | 1983-08-08 | 1985-02-23 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6091671A (ja) * | 1983-10-26 | 1985-05-23 | Hitachi Ltd | 電荷結合装置 |
JPS60132367A (ja) * | 1983-12-20 | 1985-07-15 | Nec Corp | 電荷転送装置 |
JPS60223161A (ja) * | 1984-04-19 | 1985-11-07 | Nec Corp | 電荷転送素子の出力回路 |
US4667213A (en) * | 1984-09-24 | 1987-05-19 | Rca Corporation | Charge-coupled device channel structure |
JPS60143658A (ja) * | 1984-12-10 | 1985-07-29 | Hitachi Ltd | 相補形絶縁ゲート電界効果トランジスタ集積回路 |
US4603426A (en) * | 1985-04-04 | 1986-07-29 | Rca Corporation | Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage |
US4642877A (en) * | 1985-07-01 | 1987-02-17 | Texas Instruments Incorporated | Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices |
-
1987
- 1987-07-31 JP JP62192069A patent/JPS6436073A/ja active Pending
-
1988
- 1988-07-29 US US07/226,032 patent/US4859624A/en not_active Expired - Lifetime
- 1988-07-29 EP EP88112319A patent/EP0305742B1/de not_active Expired
- 1988-07-29 DE DE8888112319T patent/DE3871663T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0305742A1 (de) | 1989-03-08 |
EP0305742B1 (de) | 1992-06-03 |
JPS6436073A (en) | 1989-02-07 |
DE3871663D1 (de) | 1992-07-09 |
US4859624A (en) | 1989-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |