JPS5619666A - Driving means of charge coupled element - Google Patents

Driving means of charge coupled element

Info

Publication number
JPS5619666A
JPS5619666A JP9576079A JP9576079A JPS5619666A JP S5619666 A JPS5619666 A JP S5619666A JP 9576079 A JP9576079 A JP 9576079A JP 9576079 A JP9576079 A JP 9576079A JP S5619666 A JPS5619666 A JP S5619666A
Authority
JP
Japan
Prior art keywords
electrode
terminal
pulse
thru
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9576079A
Other languages
Japanese (ja)
Inventor
Hiroshi Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9576079A priority Critical patent/JPS5619666A/en
Publication of JPS5619666A publication Critical patent/JPS5619666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enlarge the operation margin and to improve the yield by a method wherein a pulse amplitude value and an instantaneous value of pulse shape applied on the fixed terminals among the first thru the third electrode consisting of CCD are specified respectively. CONSTITUTION:N-type regions 2 thru 4 are diffused and formed on a P-type Si substrate 1, conductive terminal group 5 thru 11 using polycrystal Si are formed over the surface of substrate 1 via an insulating film. Among these terminals 5, 7a, 8a, 9a and 11 are used as the first electrode, terminal 6, 7b and 8b as the second electrode, and regions 2 and 4 are facilitated as the third electrode. Thus CCD is constructed and 2 phases driver. At this time pulses applied on terminal 12 provided at region 2, terminal 17a at electrode 7a, and terminal 17b at electrode 7b are prescribed as follows: That is, for a pulse applied on these electrodes, make produce the period that a pulse amplitude value is 25% or above at least 25% during one cycle of the present pulse, and make include the instantaneous value at 50% or below.
JP9576079A 1979-07-27 1979-07-27 Driving means of charge coupled element Pending JPS5619666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9576079A JPS5619666A (en) 1979-07-27 1979-07-27 Driving means of charge coupled element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9576079A JPS5619666A (en) 1979-07-27 1979-07-27 Driving means of charge coupled element

Publications (1)

Publication Number Publication Date
JPS5619666A true JPS5619666A (en) 1981-02-24

Family

ID=14146434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9576079A Pending JPS5619666A (en) 1979-07-27 1979-07-27 Driving means of charge coupled element

Country Status (1)

Country Link
JP (1) JPS5619666A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180060A (en) * 1982-04-15 1983-10-21 Nec Corp Charge coupled device
JPS59217367A (en) * 1983-05-25 1984-12-07 Nec Corp Charge transfer device and driving method thereof
US4859624A (en) * 1987-07-31 1989-08-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device having CCD and peripheral circuit
JPH0321034A (en) * 1989-06-19 1991-01-29 Hamamatsu Photonics Kk Charge transfer device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180060A (en) * 1982-04-15 1983-10-21 Nec Corp Charge coupled device
JPH024141B2 (en) * 1982-04-15 1990-01-26 Nippon Electric Co
JPS59217367A (en) * 1983-05-25 1984-12-07 Nec Corp Charge transfer device and driving method thereof
JPH0460351B2 (en) * 1983-05-25 1992-09-25 Nippon Electric Co
US4859624A (en) * 1987-07-31 1989-08-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device having CCD and peripheral circuit
JPH0321034A (en) * 1989-06-19 1991-01-29 Hamamatsu Photonics Kk Charge transfer device

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