JPS6414966A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS6414966A JPS6414966A JP17150787A JP17150787A JPS6414966A JP S6414966 A JPS6414966 A JP S6414966A JP 17150787 A JP17150787 A JP 17150787A JP 17150787 A JP17150787 A JP 17150787A JP S6414966 A JPS6414966 A JP S6414966A
- Authority
- JP
- Japan
- Prior art keywords
- transfer electrode
- electrode
- output gate
- potential
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve the sensitivity of charge detection without reducing the driving frequency by a method wherein a diffusion layer, with which stepwise potential will be formed, is provided under the transfer electrode located directly in front of an output gate electrode. CONSTITUTION:An N-type diffusion layer 24 is arranged on the region adjacent to the output gate 13 under the transfer electrode 12 located directly in front of an output gate 13. Also, a P-type diffusion layer 25 is arranged on the region adjacent to a transfer electrode 11 under the transfer electrode 12a located directly in front of the output gate 13. As a result, a stepping is generated on the potential to be formed under the transfer electrodes 12 or 12a, and by the lengthening of the electrode length L2 of the transfer electrode 12 or 12a, the gentle-sloped part generating on the potential formed under the transfer electrode 12 can be prevented, and the decrease of driving frequency of the charge transfer device can also be prevented by shortening the time required for completion of the change of potential due to signal charge on a source region 14.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17150787A JPS6414966A (en) | 1987-07-08 | 1987-07-08 | Charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17150787A JPS6414966A (en) | 1987-07-08 | 1987-07-08 | Charge transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6414966A true JPS6414966A (en) | 1989-01-19 |
Family
ID=15924393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17150787A Pending JPS6414966A (en) | 1987-07-08 | 1987-07-08 | Charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6414966A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457668A (en) * | 1987-08-27 | 1989-03-03 | Seiko Epson Corp | Charge coupled device |
US6417531B1 (en) | 1998-11-24 | 2002-07-09 | Nec Corporation | Charge transfer device with final potential well close to floating diffusion region |
-
1987
- 1987-07-08 JP JP17150787A patent/JPS6414966A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457668A (en) * | 1987-08-27 | 1989-03-03 | Seiko Epson Corp | Charge coupled device |
US6417531B1 (en) | 1998-11-24 | 2002-07-09 | Nec Corporation | Charge transfer device with final potential well close to floating diffusion region |
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