JPS5655081A - Charge coupled device - Google Patents
Charge coupled deviceInfo
- Publication number
- JPS5655081A JPS5655081A JP13233879A JP13233879A JPS5655081A JP S5655081 A JPS5655081 A JP S5655081A JP 13233879 A JP13233879 A JP 13233879A JP 13233879 A JP13233879 A JP 13233879A JP S5655081 A JPS5655081 A JP S5655081A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- electrode
- transfer
- voltage
- feeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 108091008695 photoreceptors Proteins 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve the yield of a charge coupled device by forming an electrode for transferring a signal charge to a charge transfer device of the transfer electrode of the charge transfer device, making the feeding voltage and the transfer voltage different from each other, thereby eliminating the crossover of the electrode. CONSTITUTION:An electrode for feeding the signal charge obtained from the photoreceptor on a semiconductor substrate 1 to a charge transfer device of the transfer electrode 3 of the charge transfer device so that the voltage for feeding the signal charge and the voltage for feeding in the charge transfer device are differentiated. For instance, an N<+> type layer of diffused high density is formed on the P type substrate 1 to thereby form a photodiode 2, an N-channel element is formed, and a P type layer 7 is formed as a potential barrier in the transfer channel 6. Then, the clock pulse of the amplitude A is applied to the electrode 3, the light signal voltage read at previous operation is dispatched to an output device, a pulse having a width B is applied at the time of completing the operation, and a charge is fed from the photodiode 2 to the transfer channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13233879A JPS5655081A (en) | 1979-10-12 | 1979-10-12 | Charge coupled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13233879A JPS5655081A (en) | 1979-10-12 | 1979-10-12 | Charge coupled device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5655081A true JPS5655081A (en) | 1981-05-15 |
Family
ID=15078990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13233879A Pending JPS5655081A (en) | 1979-10-12 | 1979-10-12 | Charge coupled device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5655081A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62265758A (en) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | Solid state image pickup element |
-
1979
- 1979-10-12 JP JP13233879A patent/JPS5655081A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62265758A (en) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | Solid state image pickup element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5655081A (en) | Charge coupled device | |
| JPS54148464A (en) | Pulse generating circuit | |
| DE3377603D1 (en) | Basic cell for integrated-circuit gate arrays | |
| JPS56138964A (en) | Photoelectric converter | |
| JPS51139789A (en) | Photo-electric conversion semiconductor device | |
| IE34899B1 (en) | Improvements in or relating to semiconductor devices | |
| JPS5658280A (en) | Solar cell | |
| JPS56138965A (en) | Photoelectric converter | |
| JPS533074A (en) | Production of schottkey barrier gate field effect transistor | |
| JPS56142682A (en) | Charge coupled device | |
| JPS5387188A (en) | Semiconductor device | |
| JPS5745971A (en) | Image pickup device for solid state | |
| JPS56138963A (en) | Photoelectric converter | |
| JPS5378177A (en) | Field effect transistor | |
| JPS54158176A (en) | Charge transfer device | |
| JPS53121562A (en) | Mos integrated circuit device | |
| JPS5556659A (en) | Charge coupled device | |
| JPS5247380A (en) | Sos cmos inverter | |
| JPS5374893A (en) | Driving method for semiconductor photosensitive device | |
| JPS645060A (en) | Photoelectric converting device | |
| JPS5249786A (en) | Semiconductor light coupling device | |
| JPS5384691A (en) | Production of semiconductor device | |
| JPS5469086A (en) | Charge transfer type semiconductor device | |
| JPS5732667A (en) | Pickup element for solid | |
| JPS5672585A (en) | Solid-state image pickup device |