JPS645060A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS645060A
JPS645060A JP62160513A JP16051387A JPS645060A JP S645060 A JPS645060 A JP S645060A JP 62160513 A JP62160513 A JP 62160513A JP 16051387 A JP16051387 A JP 16051387A JP S645060 A JPS645060 A JP S645060A
Authority
JP
Japan
Prior art keywords
electrodes
common lines
intersections
holding
discrete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62160513A
Other languages
Japanese (ja)
Other versions
JPH07107931B2 (en
Inventor
Kazuaki Tashiro
Satoru Itabashi
Tetsuya Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62160513A priority Critical patent/JPH07107931B2/en
Priority to EP88110054A priority patent/EP0296603A3/en
Publication of JPS645060A publication Critical patent/JPS645060A/en
Priority to US08/468,518 priority patent/US6069393A/en
Publication of JPH07107931B2 publication Critical patent/JPH07107931B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To provide a photoelectric converting apparatus having decreased stray capacitance and hence improved characteristics, by providing a conductor layer holding a fixed potential at intersections between discrete output electrodes and common lines while forming first and second gates of a thin-film transistor of the same material. CONSTITUTION:A conductor layer 206 capable of holding a fixed potential is provided at intersections between discrete output electrodes 202 and common lines 208, so that no stray capacitance is produced at the insulated intersections between the discrete electrodes 202 and the common lines 208. Further, interconnections capable of holding a fixed potential are provided between the discrete electrodes 202 and between the common lines 208, so that no capacitance is produced between the electrodes or between the lines. Further and second gate electrodes of a thin-film transistor 111 are formed of the same material, so that reflected or scattered light from the surface of an original are prevented from being incident to the channel section of the transistor.
JP62160513A 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method Expired - Fee Related JPH07107931B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62160513A JPH07107931B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method
EP88110054A EP0296603A3 (en) 1987-06-26 1988-06-23 Photoelectric converter
US08/468,518 US6069393A (en) 1987-06-26 1995-06-06 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160513A JPH07107931B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method

Publications (2)

Publication Number Publication Date
JPS645060A true JPS645060A (en) 1989-01-10
JPH07107931B2 JPH07107931B2 (en) 1995-11-15

Family

ID=15716574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160513A Expired - Fee Related JPH07107931B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method

Country Status (1)

Country Link
JP (1) JPH07107931B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06200076A (en) * 1992-10-08 1994-07-19 Sumitomo Rubber Ind Ltd Tire
WO2004069785A1 (en) * 2003-02-10 2004-08-19 Idemitsu Kosan Co., Ltd. Method for producing aromatic diamine derivative

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081869A (en) * 1983-10-12 1985-05-09 Seiko Epson Corp Driving method of thin film transistor
JPS6267864A (en) * 1985-09-20 1987-03-27 Fuji Xerox Co Ltd Original reader

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081869A (en) * 1983-10-12 1985-05-09 Seiko Epson Corp Driving method of thin film transistor
JPS6267864A (en) * 1985-09-20 1987-03-27 Fuji Xerox Co Ltd Original reader

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06200076A (en) * 1992-10-08 1994-07-19 Sumitomo Rubber Ind Ltd Tire
WO2004069785A1 (en) * 2003-02-10 2004-08-19 Idemitsu Kosan Co., Ltd. Method for producing aromatic diamine derivative

Also Published As

Publication number Publication date
JPH07107931B2 (en) 1995-11-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees