JPS645059A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS645059A
JPS645059A JP62160512A JP16051287A JPS645059A JP S645059 A JPS645059 A JP S645059A JP 62160512 A JP62160512 A JP 62160512A JP 16051287 A JP16051287 A JP 16051287A JP S645059 A JPS645059 A JP S645059A
Authority
JP
Japan
Prior art keywords
light
tft
original
photoelectric converting
stray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62160512A
Other languages
Japanese (ja)
Other versions
JPH07107930B2 (en
Inventor
Satoru Itabashi
Kazuaki Tashiro
Tetsuya Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62160512A priority Critical patent/JPH07107930B2/en
Priority to EP88110054A priority patent/EP0296603A3/en
Publication of JPS645059A publication Critical patent/JPS645059A/en
Priority to US08/468,518 priority patent/US6069393A/en
Publication of JPH07107930B2 publication Critical patent/JPH07107930B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To decrease stray capacitance and leakage current, by providing conductor layers holding a fixed potential at interconnections between discrete output electrodes and common lines while providing a light-shielding layer on the channel section of a thin-film transistor. CONSTITUTION:Conductor layers 16 capable of holding a fixed potential are provided at intersections between discrete output electrodes 12 and common lines 18 of a photoelectric converting element 1, so that stray capacitance is eliminated. Incident light 9 from a light source passes through a glass substrate 8, a window 4 and a transparent spacer 6 and reaches an original 7. Reflected light 10 from the original 7 reaches the photoelectric converting element section 1, where the optical signal is converted into an electrical signal according to image data. A stray light 11 constituting a part of the reflected light from the original 7 is applied to a thin-film transistor (TFT), but the stray light 11 is prevented from entering into the channel of the TFT by a light-shielding layer 19 provided by a third conductor layer 18 on the TFT.
JP62160512A 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method Expired - Fee Related JPH07107930B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62160512A JPH07107930B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method
EP88110054A EP0296603A3 (en) 1987-06-26 1988-06-23 Photoelectric converter
US08/468,518 US6069393A (en) 1987-06-26 1995-06-06 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160512A JPH07107930B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method

Publications (2)

Publication Number Publication Date
JPS645059A true JPS645059A (en) 1989-01-10
JPH07107930B2 JPH07107930B2 (en) 1995-11-15

Family

ID=15716550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160512A Expired - Fee Related JPH07107930B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method

Country Status (1)

Country Link
JP (1) JPH07107930B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209768A (en) * 1990-01-11 1991-09-12 Fuji Xerox Co Ltd Manufacture of image sensor
JPH05213016A (en) * 1991-10-21 1993-08-24 Goodyear Tire & Rubber Co:The Tire with rubber side wall

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243177A (en) * 1985-08-20 1987-02-25 Nec Corp Field effect transistor
JPS6267864A (en) * 1985-09-20 1987-03-27 Fuji Xerox Co Ltd Original reader

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243177A (en) * 1985-08-20 1987-02-25 Nec Corp Field effect transistor
JPS6267864A (en) * 1985-09-20 1987-03-27 Fuji Xerox Co Ltd Original reader

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209768A (en) * 1990-01-11 1991-09-12 Fuji Xerox Co Ltd Manufacture of image sensor
JPH05213016A (en) * 1991-10-21 1993-08-24 Goodyear Tire & Rubber Co:The Tire with rubber side wall

Also Published As

Publication number Publication date
JPH07107930B2 (en) 1995-11-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees