EP0296603A3 - Photoelectric converter - Google Patents

Photoelectric converter Download PDF

Info

Publication number
EP0296603A3
EP0296603A3 EP88110054A EP88110054A EP0296603A3 EP 0296603 A3 EP0296603 A3 EP 0296603A3 EP 88110054 A EP88110054 A EP 88110054A EP 88110054 A EP88110054 A EP 88110054A EP 0296603 A3 EP0296603 A3 EP 0296603A3
Authority
EP
European Patent Office
Prior art keywords
unit
photoelectric converter
charge storage
wiring
storage unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP88110054A
Other languages
German (de)
French (fr)
Other versions
EP0296603A2 (en
Inventor
Katsunori Hatanaka
Toshihiro Saika
Takayuki Ishii
Katsuhiko Yamada
Satoshi Itabashi
Kazuaki Tashiro
Tetsuya Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62160505A external-priority patent/JPH06103743B2/en
Priority claimed from JP62160512A external-priority patent/JPH07107930B2/en
Priority claimed from JP62160509A external-priority patent/JPS645056A/en
Priority claimed from JP62160511A external-priority patent/JPS645058A/en
Priority claimed from JP62160513A external-priority patent/JPH07107931B2/en
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0296603A2 publication Critical patent/EP0296603A2/en
Publication of EP0296603A3 publication Critical patent/EP0296603A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
    • H04N1/0315—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using photodetectors and illumination means mounted on separate supports or substrates or mounted in different planes
    • H04N1/0316—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors using photodetectors and illumination means mounted on separate supports or substrates or mounted in different planes illuminating the scanned image elements through the plane of the photodetector, e.g. back-light illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
    • H04N1/0313—Direct contact pick-up heads, i.e. heads having no array of elements to project the scanned image elements onto the photodectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

An image sensor includes a photoelectric conversion unit, a charge storage unit (16), a switch unit (17,18), and a wiring unit (19), all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.
EP88110054A 1987-06-26 1988-06-23 Photoelectric converter Withdrawn EP0296603A3 (en)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP62160505A JPH06103743B2 (en) 1987-06-26 1987-06-26 Image sensor
JP62160512A JPH07107930B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method
JP62160509A JPS645056A (en) 1987-06-26 1987-06-26 Photoelectric converting device
JP160505/87 1987-06-26
JP62160511A JPS645058A (en) 1987-06-26 1987-06-26 Photoelectric converting device
JP160512/87 1987-06-26
JP160511/87 1987-06-26
JP62160513A JPH07107931B2 (en) 1987-06-26 1987-06-26 Photoelectric conversion device manufacturing method
JP160513/87 1987-06-26
JP160509/87 1987-06-26

Publications (2)

Publication Number Publication Date
EP0296603A2 EP0296603A2 (en) 1988-12-28
EP0296603A3 true EP0296603A3 (en) 1989-02-08

Family

ID=27528234

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88110054A Withdrawn EP0296603A3 (en) 1987-06-26 1988-06-23 Photoelectric converter

Country Status (1)

Country Link
EP (1) EP0296603A3 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886977A (en) * 1986-11-11 1989-12-12 Canon Kabushiki Kaisha Photoelectric converter provided with voltage dividing means
DE4005494C2 (en) * 1989-02-21 1994-10-20 Canon Kk Semiconductor device and image reader with this semiconductor device with optimized electrical properties
JPH04226079A (en) * 1990-04-17 1992-08-14 Canon Inc Semiconductor device and its manufacture and electronic circuit device using it
KR0137398B1 (en) * 1992-10-23 1998-04-29 모리시타 요이찌 Fabrication method of sensor & unit
JP3066944B2 (en) * 1993-12-27 2000-07-17 キヤノン株式会社 Photoelectric conversion device, driving method thereof, and system having the same
EP0778983B1 (en) * 1994-07-27 2000-05-31 1294339 Ontario, Inc. Radiation imaginging system
JP3984676B2 (en) * 1996-03-26 2007-10-03 キヤノン株式会社 Photoelectric conversion device and system having the device
JP5196739B2 (en) 2006-06-09 2013-05-15 キヤノン株式会社 Radiation imaging apparatus and radiation imaging system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291337A (en) * 1978-09-27 1981-09-22 Matsushita Electronics Corporation Electric charge transfer apparatus
US4349743A (en) * 1979-11-14 1982-09-14 Hitachi, Ltd. Solid-state imaging device
US4577232A (en) * 1984-08-31 1986-03-18 Texas Instruments Incorporated Line addressed charge coupled imager
US4591916A (en) * 1982-03-31 1986-05-27 Sony Corporation Solid state image pickup device
US4679088A (en) * 1984-11-28 1987-07-07 Kabushiki Kaisha Toshiba Image sensor with means to adjust capacitance of signal leads
US4691244A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including static shield

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291337A (en) * 1978-09-27 1981-09-22 Matsushita Electronics Corporation Electric charge transfer apparatus
US4349743A (en) * 1979-11-14 1982-09-14 Hitachi, Ltd. Solid-state imaging device
US4591916A (en) * 1982-03-31 1986-05-27 Sony Corporation Solid state image pickup device
US4691244A (en) * 1984-05-04 1987-09-01 Energy Conversion Devices, Inc. Contact-type document scanner including static shield
US4577232A (en) * 1984-08-31 1986-03-18 Texas Instruments Incorporated Line addressed charge coupled imager
US4679088A (en) * 1984-11-28 1987-07-07 Kabushiki Kaisha Toshiba Image sensor with means to adjust capacitance of signal leads

Also Published As

Publication number Publication date
EP0296603A2 (en) 1988-12-28

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