JPS56142682A - Charge coupled device - Google Patents
Charge coupled deviceInfo
- Publication number
- JPS56142682A JPS56142682A JP4549380A JP4549380A JPS56142682A JP S56142682 A JPS56142682 A JP S56142682A JP 4549380 A JP4549380 A JP 4549380A JP 4549380 A JP4549380 A JP 4549380A JP S56142682 A JPS56142682 A JP S56142682A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- charge transfer
- semiconductor substrate
- conductivity type
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005513 bias potential Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To reduce a noise current and a dark current produced due to thermal excitation or light diffraction by applying a predetermined bias potential to the periphery of a charge transfer region and forming a reverse conductivity type region to a semiconductor substrate thereon. CONSTITUTION:Charge transfer regions 13, 13' are formed through transfer gates 12, 12' at both sides of photoelectric converting regions 11-1, 11-2,...11-n. Charges converted by the regions 11-1, 11-2,...11-n are divided at every other into charge transfer regions 13, 13', transferred at the regions 13, 13', then corrected to a series of original charge row by an output amplfier 14, and produced as an electric signal. Reverse conductivity type region 15 to the semiconductor substrate to which predetermined bias 16 is applied is provided outside the regions 13, 13'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4549380A JPS56142682A (en) | 1980-04-07 | 1980-04-07 | Charge coupled device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4549380A JPS56142682A (en) | 1980-04-07 | 1980-04-07 | Charge coupled device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56142682A true JPS56142682A (en) | 1981-11-07 |
Family
ID=12720918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4549380A Pending JPS56142682A (en) | 1980-04-07 | 1980-04-07 | Charge coupled device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56142682A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5237190A (en) * | 1992-07-31 | 1993-08-17 | Hualon Microelectronics Corporation | Charge-coupled-device color image sensor |
-
1980
- 1980-04-07 JP JP4549380A patent/JPS56142682A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5237190A (en) * | 1992-07-31 | 1993-08-17 | Hualon Microelectronics Corporation | Charge-coupled-device color image sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5772370A (en) | Photoelectric converter | |
JPS55120182A (en) | Photoelectric converter | |
JPS56138967A (en) | Photoelectric converter | |
JPS5755672A (en) | Solid-state image pickup device and its driving method | |
JPS57173966A (en) | Solid state image pickup device | |
JPS57104278A (en) | Photoelectric converting device | |
JPS56142682A (en) | Charge coupled device | |
EP0377959A3 (en) | A method of driving a charge detection circuit | |
JPS57181176A (en) | High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor | |
JPS5687379A (en) | Solid image pickup device | |
JPS56125881A (en) | Optical semiconductor element | |
JPS57173969A (en) | Solid state image pickup device | |
JPS5792983A (en) | Solid-state image pickup device | |
JPS57173273A (en) | Solid-state image pickup device | |
JPS55102280A (en) | Infrared charge transfer device | |
JPS56148874A (en) | Semiconductor photoelectric converter | |
JPS5774945A (en) | Photoconductive film for image pick-up tube | |
JPS5559787A (en) | Method of manufacturing semiconductor element having photoelectric converting characteristic | |
JPS56138965A (en) | Photoelectric converter | |
JPS5311519A (en) | Buried cahnnel type solic pickup unit of frame transfer system | |
JPS5736875A (en) | Semiconductor photoelectric converter | |
JPS5655081A (en) | Charge coupled device | |
JPS5745971A (en) | Image pickup device for solid state | |
JPS5586273A (en) | Solid-state pickup unit | |
JPS5617582A (en) | Image sensor |