DE3871663D1 - Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis. - Google Patents

Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis.

Info

Publication number
DE3871663D1
DE3871663D1 DE8888112319T DE3871663T DE3871663D1 DE 3871663 D1 DE3871663 D1 DE 3871663D1 DE 8888112319 T DE8888112319 T DE 8888112319T DE 3871663 T DE3871663 T DE 3871663T DE 3871663 D1 DE3871663 D1 DE 3871663D1
Authority
DE
Germany
Prior art keywords
ccd
manufacturing process
peripheral circuit
semiconductor components
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888112319T
Other languages
English (en)
Other versions
DE3871663T2 (de
Inventor
Hiroshige Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3871663D1 publication Critical patent/DE3871663D1/de
Publication of DE3871663T2 publication Critical patent/DE3871663T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
DE8888112319T 1987-07-31 1988-07-29 Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis. Expired - Lifetime DE3871663T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192069A JPS6436073A (en) 1987-07-31 1987-07-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
DE3871663D1 true DE3871663D1 (de) 1992-07-09
DE3871663T2 DE3871663T2 (de) 1992-12-10

Family

ID=16285110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888112319T Expired - Lifetime DE3871663T2 (de) 1987-07-31 1988-07-29 Herstellungsverfahren von halbleiterbauelementen mit ccd- und peripherie-schaltkreis.

Country Status (4)

Country Link
US (1) US4859624A (de)
EP (1) EP0305742B1 (de)
JP (1) JPS6436073A (de)
DE (1) DE3871663T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194348A (ja) * 1988-01-28 1989-08-04 Nec Corp 半導体装置
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
US5198880A (en) * 1989-06-22 1993-03-30 Kabushiki Kaisha Toshiba Semiconductor integrated circuit and method of making the same
JPH07105458B2 (ja) * 1989-11-21 1995-11-13 株式会社東芝 複合型集積回路素子
US5260228A (en) * 1990-01-19 1993-11-09 Kabushiki Kaisha Toshiba Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors
US5021858A (en) * 1990-05-25 1991-06-04 Hall John H Compound modulated integrated transistor structure
EP0492144A3 (en) * 1990-11-26 1992-08-12 Matsushita Electronics Corporation Charge-coupled device and solid-state imaging device
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法
US6366322B1 (en) * 1991-04-15 2002-04-02 Lg Semicon Co., Ltd. Horizontal charge coupled device of CCD image sensor
US5357548A (en) * 1992-11-04 1994-10-18 Xerox Corporation Reversible charge transfer and logic utilizing them
US6456326B2 (en) 1994-01-28 2002-09-24 California Institute Of Technology Single chip camera device having double sampling operation
US6021172A (en) * 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
USRE42918E1 (en) 1994-01-28 2011-11-15 California Institute Of Technology Single substrate camera device with CMOS image sensor
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
KR0148734B1 (ko) * 1995-06-22 1998-08-01 문정환 시시디 촬상소자 제조방법
US5900654A (en) * 1995-07-17 1999-05-04 Spratt; James P. Radiation hardened charge coupled device
US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
KR100770299B1 (ko) * 2001-11-28 2007-10-25 주식회사 포스코 바코드 인식이 가능한 코일 리프터 장치
JP2006041196A (ja) * 2004-07-27 2006-02-09 Nec Electronics Corp 固体撮像素子およびその製造方法
KR100624341B1 (ko) * 2004-09-22 2006-09-15 (주)아이디에스 시시디 고체촬상소자

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
US4024563A (en) * 1975-09-02 1977-05-17 Texas Instruments Incorporated Doped oxide buried channel charge-coupled device
US4216574A (en) * 1978-06-29 1980-08-12 Raytheon Company Charge coupled device
JPS5586155A (en) * 1978-12-22 1980-06-28 Toshiba Corp Semiconductor device having protective circuit
US4285000A (en) * 1979-03-12 1981-08-18 Rockwell International Corporation Buried channel charge coupled device with semi-insulating substrate
JPS5619666A (en) * 1979-07-27 1981-02-24 Nec Corp Driving means of charge coupled element
NL186416C (nl) * 1981-06-05 1990-11-16 Philips Nv Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
US4362575A (en) * 1981-08-27 1982-12-07 Rca Corporation Method of making buried channel charge coupled device with means for controlling excess charge
JPS58128767A (ja) * 1982-01-28 1983-08-01 Toshiba Corp 電荷転送装置の製造方法
JPS58140162A (ja) * 1982-02-16 1983-08-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS6035572A (ja) * 1983-08-08 1985-02-23 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6091671A (ja) * 1983-10-26 1985-05-23 Hitachi Ltd 電荷結合装置
JPS60132367A (ja) * 1983-12-20 1985-07-15 Nec Corp 電荷転送装置
JPS60223161A (ja) * 1984-04-19 1985-11-07 Nec Corp 電荷転送素子の出力回路
US4667213A (en) * 1984-09-24 1987-05-19 Rca Corporation Charge-coupled device channel structure
JPS60143658A (ja) * 1984-12-10 1985-07-29 Hitachi Ltd 相補形絶縁ゲート電界効果トランジスタ集積回路
US4603426A (en) * 1985-04-04 1986-07-29 Rca Corporation Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage
US4642877A (en) * 1985-07-01 1987-02-17 Texas Instruments Incorporated Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices

Also Published As

Publication number Publication date
EP0305742A1 (de) 1989-03-08
DE3871663T2 (de) 1992-12-10
US4859624A (en) 1989-08-22
JPS6436073A (en) 1989-02-07
EP0305742B1 (de) 1992-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)