NL186416C - Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. - Google Patents

Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.

Info

Publication number
NL186416C
NL186416C NLAANVRAGE8102719,A NL8102719A NL186416C NL 186416 C NL186416 C NL 186416C NL 8102719 A NL8102719 A NL 8102719A NL 186416 C NL186416 C NL 186416C
Authority
NL
Netherlands
Prior art keywords
phase load
semiconductor device
device including
connected device
semiconductor
Prior art date
Application number
NLAANVRAGE8102719,A
Other languages
English (en)
Other versions
NL186416B (nl
NL8102719A (nl
Inventor
Teunis Johannes Dr Hazendonk
Arend Jan Ir Klinkhamer
Gerard Andre Beck
Theodorus Fernand Smit
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8102719,A priority Critical patent/NL186416C/nl
Priority to DE19823220084 priority patent/DE3220084A1/de
Priority to IT21655/82A priority patent/IT1198375B/it
Priority to FR8209570A priority patent/FR2511545B1/fr
Priority to GB08216060A priority patent/GB2101400B/en
Priority to JP57096050A priority patent/JPS58175A/ja
Publication of NL8102719A publication Critical patent/NL8102719A/nl
Priority to US06/713,582 priority patent/US4584697A/en
Publication of NL186416B publication Critical patent/NL186416B/nl
Application granted granted Critical
Publication of NL186416C publication Critical patent/NL186416C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NLAANVRAGE8102719,A 1981-06-05 1981-06-05 Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. NL186416C (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NLAANVRAGE8102719,A NL186416C (nl) 1981-06-05 1981-06-05 Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
DE19823220084 DE3220084A1 (de) 1981-06-05 1982-05-28 Halbleiteranordnung, die eine vierphasen-ccd umfasst
IT21655/82A IT1198375B (it) 1981-06-05 1982-06-02 Dispositivo semiconduttore comprendente un dispositivo ad accoppiamento di cariche,di tipo quadrifase
FR8209570A FR2511545B1 (fr) 1981-06-05 1982-06-02 Dispositif semi-conducteur comportant un dispositif a couplage de charges a quatre phases
GB08216060A GB2101400B (en) 1981-06-05 1982-06-02 Charge coupled devices
JP57096050A JPS58175A (ja) 1981-06-05 1982-06-04 半導体装置
US06/713,582 US4584697A (en) 1981-06-05 1985-03-19 Four-phase charge-coupled device having an oversized electrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE8102719,A NL186416C (nl) 1981-06-05 1981-06-05 Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
NL8102719 1981-06-05

Publications (3)

Publication Number Publication Date
NL8102719A NL8102719A (nl) 1983-01-03
NL186416B NL186416B (nl) 1990-06-18
NL186416C true NL186416C (nl) 1990-11-16

Family

ID=19837602

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8102719,A NL186416C (nl) 1981-06-05 1981-06-05 Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.

Country Status (7)

Country Link
US (1) US4584697A (nl)
JP (1) JPS58175A (nl)
DE (1) DE3220084A1 (nl)
FR (1) FR2511545B1 (nl)
GB (1) GB2101400B (nl)
IT (1) IT1198375B (nl)
NL (1) NL186416C (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500863A (nl) * 1985-03-25 1986-10-16 Philips Nv Ladingsoverdrachtinrichting.
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
JP2606225B2 (ja) * 1987-08-27 1997-04-30 セイコーエプソン株式会社 電荷結合素子
JPH03245504A (ja) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd 臨界磁場測定装置用磁石
KR930002818B1 (ko) * 1990-05-11 1993-04-10 금성일렉트론주식회사 Ccd 영상소자
DE69120773T2 (de) * 1990-11-09 1997-02-06 Matsushita Electronics Corp Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung
EP0492144A3 (en) * 1990-11-26 1992-08-12 Matsushita Electronics Corporation Charge-coupled device and solid-state imaging device
US7247892B2 (en) * 2000-04-24 2007-07-24 Taylor Geoff W Imaging array utilizing thyristor-based pixel elements
US6870207B2 (en) 2000-04-24 2005-03-22 The University Of Connecticut III-V charge coupled device suitable for visible, near and far infra-red detection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233946B2 (nl) * 1971-11-17 1977-08-31
JPS5242357B2 (nl) * 1972-06-05 1977-10-24
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices
JPS53134372A (en) * 1977-04-28 1978-11-22 Mitsubishi Electric Corp Charge transfer type semiconductor device and its driving method
GB2010010B (en) * 1977-10-19 1982-02-17 Gen Electric Co Ltd Charge coupled devices

Also Published As

Publication number Publication date
NL186416B (nl) 1990-06-18
NL8102719A (nl) 1983-01-03
IT1198375B (it) 1988-12-21
JPS58175A (ja) 1983-01-05
GB2101400B (en) 1984-11-14
DE3220084A1 (de) 1983-01-20
IT8221655A0 (it) 1982-06-02
GB2101400A (en) 1983-01-12
JPS6249748B2 (nl) 1987-10-21
FR2511545B1 (fr) 1986-07-25
US4584697A (en) 1986-04-22
DE3220084C2 (nl) 1991-03-14
FR2511545A1 (fr) 1983-02-18

Similar Documents

Publication Publication Date Title
NL190599C (nl) Afsnoerinrichting.
NO154900C (no) Elektroakustisk anordning.
IT8323850A0 (it) Dispositivo laser a semiconduttori.
IT8221608A0 (it) Dispositivo di memoria a semiconduttori.
NO863053L (no) Avledningsanordning.
DE3584799D1 (de) Halbleitervorrichtung.
ES517864A0 (es) Dispositivo fotovoltaico pindesilicio amorfo.
IT8123757A0 (it) Dispositivo raddrizzatore a semiconduttore.
ATE11392T1 (de) Verschlussvorrichtung.
NL190476C (nl) Transportinrichting.
DE3581370D1 (de) Halbleitervorrichtung.
NL193522B (nl) Vastsnoerinrichting.
ES270000Y (es) Un bramante.
DE3586568D1 (de) Halbleitereinrichtung.
IT8224845A0 (it) Dispositivo confezionatore.
ATE39913T1 (de) Oeffnungsvorrichtung.
FI73942B (fi) Med utloesare manoevrerbar foerdelningsventil foer en under tryck staoende behaollare.
NL186416C (nl) Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
IT8219677A0 (it) Dispositivo a semiconduttori.
IT8020125A0 (it) Dispositivo a semicondutture.
ES519470A0 (es) Un dispositivo semiconductor.
ES519272A0 (es) Un dispositivo semiconductor moldeado en vidrio.
NO812151L (no) Koblingsanordning.
NO156406C (no) Jekkanordning.
IT8223344A0 (it) Dispositivo di memoria a semiconduttori.

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: PHILIPS ELECTRONICS N.V.

V1 Lapsed because of non-payment of the annual fee

Effective date: 19980101