NL186416B - Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. - Google Patents
Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.Info
- Publication number
- NL186416B NL186416B NLAANVRAGE8102719,A NL8102719A NL186416B NL 186416 B NL186416 B NL 186416B NL 8102719 A NL8102719 A NL 8102719A NL 186416 B NL186416 B NL 186416B
- Authority
- NL
- Netherlands
- Prior art keywords
- phase load
- semiconductor device
- device including
- connected device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8102719,A NL186416C (nl) | 1981-06-05 | 1981-06-05 | Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. |
DE19823220084 DE3220084A1 (de) | 1981-06-05 | 1982-05-28 | Halbleiteranordnung, die eine vierphasen-ccd umfasst |
FR8209570A FR2511545B1 (fr) | 1981-06-05 | 1982-06-02 | Dispositif semi-conducteur comportant un dispositif a couplage de charges a quatre phases |
GB08216060A GB2101400B (en) | 1981-06-05 | 1982-06-02 | Charge coupled devices |
IT21655/82A IT1198375B (it) | 1981-06-05 | 1982-06-02 | Dispositivo semiconduttore comprendente un dispositivo ad accoppiamento di cariche,di tipo quadrifase |
JP57096050A JPS58175A (ja) | 1981-06-05 | 1982-06-04 | 半導体装置 |
US06/713,582 US4584697A (en) | 1981-06-05 | 1985-03-19 | Four-phase charge-coupled device having an oversized electrode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8102719,A NL186416C (nl) | 1981-06-05 | 1981-06-05 | Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. |
NL8102719 | 1981-06-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8102719A NL8102719A (nl) | 1983-01-03 |
NL186416B true NL186416B (nl) | 1990-06-18 |
NL186416C NL186416C (nl) | 1990-11-16 |
Family
ID=19837602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8102719,A NL186416C (nl) | 1981-06-05 | 1981-06-05 | Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4584697A (nl) |
JP (1) | JPS58175A (nl) |
DE (1) | DE3220084A1 (nl) |
FR (1) | FR2511545B1 (nl) |
GB (1) | GB2101400B (nl) |
IT (1) | IT1198375B (nl) |
NL (1) | NL186416C (nl) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
JPS6436073A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Manufacture of semiconductor device |
JP2606225B2 (ja) * | 1987-08-27 | 1997-04-30 | セイコーエプソン株式会社 | 電荷結合素子 |
JPH03245504A (ja) * | 1990-02-23 | 1991-11-01 | Sumitomo Heavy Ind Ltd | 臨界磁場測定装置用磁石 |
KR930002818B1 (ko) * | 1990-05-11 | 1993-04-10 | 금성일렉트론주식회사 | Ccd 영상소자 |
DE69120773T2 (de) * | 1990-11-09 | 1997-02-06 | Matsushita Electronics Corp | Ladungsträgeranordnung, Verfahren zu ihrer Herstellung und Verfahren zu ihrer Steuerung |
EP0492144A3 (en) * | 1990-11-26 | 1992-08-12 | Matsushita Electronics Corporation | Charge-coupled device and solid-state imaging device |
US6870207B2 (en) | 2000-04-24 | 2005-03-22 | The University Of Connecticut | III-V charge coupled device suitable for visible, near and far infra-red detection |
US7247892B2 (en) * | 2000-04-24 | 2007-07-24 | Taylor Geoff W | Imaging array utilizing thyristor-based pixel elements |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5233946B2 (nl) * | 1971-11-17 | 1977-08-31 | ||
JPS5242357B2 (nl) * | 1972-06-05 | 1977-10-24 | ||
US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
US3986059A (en) * | 1975-04-18 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Electrically pulsed charge regenerator for semiconductor charge coupled devices |
JPS53134372A (en) * | 1977-04-28 | 1978-11-22 | Mitsubishi Electric Corp | Charge transfer type semiconductor device and its driving method |
GB2010010B (en) * | 1977-10-19 | 1982-02-17 | Gen Electric Co Ltd | Charge coupled devices |
-
1981
- 1981-06-05 NL NLAANVRAGE8102719,A patent/NL186416C/nl not_active IP Right Cessation
-
1982
- 1982-05-28 DE DE19823220084 patent/DE3220084A1/de active Granted
- 1982-06-02 IT IT21655/82A patent/IT1198375B/it active
- 1982-06-02 FR FR8209570A patent/FR2511545B1/fr not_active Expired
- 1982-06-02 GB GB08216060A patent/GB2101400B/en not_active Expired
- 1982-06-04 JP JP57096050A patent/JPS58175A/ja active Granted
-
1985
- 1985-03-19 US US06/713,582 patent/US4584697A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2511545A1 (fr) | 1983-02-18 |
FR2511545B1 (fr) | 1986-07-25 |
GB2101400A (en) | 1983-01-12 |
JPS6249748B2 (nl) | 1987-10-21 |
JPS58175A (ja) | 1983-01-05 |
NL186416C (nl) | 1990-11-16 |
US4584697A (en) | 1986-04-22 |
GB2101400B (en) | 1984-11-14 |
IT8221655A0 (it) | 1982-06-02 |
NL8102719A (nl) | 1983-01-03 |
DE3220084A1 (de) | 1983-01-20 |
DE3220084C2 (nl) | 1991-03-14 |
IT1198375B (it) | 1988-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
TNT | Modifications of names of proprietors of patents or applicants of examined patent applications |
Owner name: PHILIPS ELECTRONICS N.V. |
|
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 19980101 |