DE3585685D1 - Verfahren zur herstellung einer halbleiteranordnung unter verwendung eines implantationsschritts. - Google Patents

Verfahren zur herstellung einer halbleiteranordnung unter verwendung eines implantationsschritts.

Info

Publication number
DE3585685D1
DE3585685D1 DE8585308503T DE3585685T DE3585685D1 DE 3585685 D1 DE3585685 D1 DE 3585685D1 DE 8585308503 T DE8585308503 T DE 8585308503T DE 3585685 T DE3585685 T DE 3585685T DE 3585685 D1 DE3585685 D1 DE 3585685D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
implantation step
implantation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585308503T
Other languages
English (en)
Inventor
Hitoshi Patent Div K K Mikami
Katsuyoshi Patent Div K Fukuda
Shigeru Patent Div K K Yasuami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3585685D1 publication Critical patent/DE3585685D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/083—Ion implantation, general

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8585308503T 1985-03-27 1985-11-22 Verfahren zur herstellung einer halbleiteranordnung unter verwendung eines implantationsschritts. Expired - Lifetime DE3585685D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062306A JP2597976B2 (ja) 1985-03-27 1985-03-27 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE3585685D1 true DE3585685D1 (de) 1992-04-23

Family

ID=13196318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585308503T Expired - Lifetime DE3585685D1 (de) 1985-03-27 1985-11-22 Verfahren zur herstellung einer halbleiteranordnung unter verwendung eines implantationsschritts.

Country Status (4)

Country Link
US (1) US4670968A (de)
EP (1) EP0195867B1 (de)
JP (1) JP2597976B2 (de)
DE (1) DE3585685D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174108B (en) * 1985-04-04 1989-07-19 Sharp Kk Method for forming a polycrystalline silicon thin film
JPS6433924A (en) * 1987-07-29 1989-02-03 Sony Corp Semiconductor wafer
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JP3549227B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜
JP3755904B2 (ja) * 1993-05-14 2006-03-15 株式会社神戸製鋼所 ダイヤモンド整流素子
JPH0794805A (ja) * 1993-05-14 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置
JPH06326548A (ja) * 1993-05-14 1994-11-25 Kobe Steel Ltd 高配向性ダイヤモンド薄膜を使用した表面弾性波素子
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
JPH0786311A (ja) * 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
JP3145851B2 (ja) * 1993-12-20 2001-03-12 日本電気株式会社 半導体基板及び半導体装置
US5998294A (en) * 1998-04-29 1999-12-07 The United States Of America As Represented By The Secretary Of The Navy Method for forming improved electrical contacts on non-planar structures
WO2001052675A2 (en) * 2000-01-18 2001-07-26 Stryker Instruments Air filtration system including a helmet assembly
JP4789463B2 (ja) * 2004-12-28 2011-10-12 キヤノン株式会社 光電変換装置とその製造方法，及び撮像システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JPS5834931B2 (ja) * 1975-10-28 1983-07-29 ソニー株式会社 ハンドウタイヘノフジユンブツドウニユウホウ
JPS5449063A (en) * 1977-09-27 1979-04-18 Nec Corp Semiconductor device and its manufacture
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
JPS5911988B2 (ja) * 1980-01-23 1984-03-19 株式会社日立製作所 イオン打込み方法
JPS58106823A (ja) * 1981-12-18 1983-06-25 Toshiba Corp イオン注入方法
JPS60733A (ja) * 1983-06-17 1985-01-05 Nec Corp 半導体装置とその製造方法
US4558509A (en) * 1984-06-29 1985-12-17 International Business Machines Corporation Method for fabricating a gallium arsenide semiconductor device
US4575922A (en) * 1984-11-05 1986-03-18 Burroughs Corporation Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites

Also Published As

Publication number Publication date
EP0195867B1 (de) 1992-03-18
US4670968A (en) 1987-06-09
EP0195867A2 (de) 1986-10-01
JPS61220424A (ja) 1986-09-30
JP2597976B2 (ja) 1997-04-09
EP0195867A3 (en) 1988-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)