DE3785287D1 - Verfahren zur herstellung einer duennschicht-halbleiterdiodenanordnung. - Google Patents

Verfahren zur herstellung einer duennschicht-halbleiterdiodenanordnung.

Info

Publication number
DE3785287D1
DE3785287D1 DE8787308923T DE3785287T DE3785287D1 DE 3785287 D1 DE3785287 D1 DE 3785287D1 DE 8787308923 T DE8787308923 T DE 8787308923T DE 3785287 T DE3785287 T DE 3785287T DE 3785287 D1 DE3785287 D1 DE 3785287D1
Authority
DE
Germany
Prior art keywords
thin
producing
semiconductor diode
layer semiconductor
diode arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787308923T
Other languages
English (en)
Other versions
DE3785287T2 (de
Inventor
Aza Bishamon Tsuzuki
Masami Yamaoka
Hiroshi Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of DE3785287D1 publication Critical patent/DE3785287D1/de
Application granted granted Critical
Publication of DE3785287T2 publication Critical patent/DE3785287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19873785287 1986-10-08 1987-10-08 Verfahren zur herstellung einer duennschicht-halbleiterdiodenanordnung. Expired - Lifetime DE3785287T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23965886 1986-10-08

Publications (2)

Publication Number Publication Date
DE3785287D1 true DE3785287D1 (de) 1993-05-13
DE3785287T2 DE3785287T2 (de) 1993-11-04

Family

ID=17047974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873785287 Expired - Lifetime DE3785287T2 (de) 1986-10-08 1987-10-08 Verfahren zur herstellung einer duennschicht-halbleiterdiodenanordnung.

Country Status (3)

Country Link
EP (1) EP0263711B1 (de)
JP (1) JP2649359B2 (de)
DE (1) DE3785287T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136348A (en) * 1986-10-08 1992-08-04 Nippondenso Co., Ltd. Structure and manufacturing method for thin-film semiconductor diode device
FR2789226B1 (fr) * 1999-01-29 2002-06-14 Commissariat Energie Atomique Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
JP4329829B2 (ja) 2007-02-27 2009-09-09 株式会社デンソー 半導体装置
JP5309497B2 (ja) * 2007-08-09 2013-10-09 富士電機株式会社 半導体装置
JP2011003588A (ja) * 2009-06-16 2011-01-06 Hamamatsu Photonics Kk 赤外線検出素子及びその製造方法
JP5729371B2 (ja) * 2012-12-27 2015-06-03 富士電機株式会社 半導体装置
JP7454454B2 (ja) * 2020-06-18 2024-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988769A (en) * 1973-10-30 1976-10-26 General Electric Company High voltage diodes
JPS50134774A (de) * 1974-04-15 1975-10-25
JPS5841659B2 (ja) * 1977-08-30 1983-09-13 株式会社東芝 絶縁膜の形成方法
US4236831A (en) * 1979-07-27 1980-12-02 Honeywell Inc. Semiconductor apparatus
JPS56114381A (en) * 1980-02-15 1981-09-08 Toshiba Corp Semiconductor device
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
US4616404A (en) * 1984-11-30 1986-10-14 Advanced Micro Devices, Inc. Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects

Also Published As

Publication number Publication date
JP2649359B2 (ja) 1997-09-03
EP0263711A3 (en) 1988-08-31
EP0263711A2 (de) 1988-04-13
EP0263711B1 (de) 1993-04-07
JPS63226075A (ja) 1988-09-20
DE3785287T2 (de) 1993-11-04

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Legal Events

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