JP7454454B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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Description
<半導体装置の構造について>
本発明の一実施の形態の半導体装置を図面を参照して説明する。図1は、本実施の形態の半導体装置(半導体チップ)CPの平面図であり、図1には、半導体装置CPの上面側の全体平面図が示されている。図2および図3は、本実施の形態の半導体装置CPの要部平面図であり、ダイオード形成領域RG1の平面図が示されている。なお、図2と図3には、同じ平面領域が示されている。図2には、シリコン膜SFを示し、シリコン膜SFにおけるn型シリコン領域NSとp型シリコン領域PSとにそれぞれハッチングを付してある。図3は、図2に、更にコンタクトホールCTA,CTCと配線M1A,M1Cを追加した図であり、コンタクトホールCTA,CTCを点線で示し、配線M1A,M1Cを二点鎖線で示しており、図3ではハッチングは用いていない。図1~図3などに示されるX方向およびY方向は、半導体装置CPを構成する半導体基板SUBの主面に略平行な方向であり、かつ、X方向とY方向とは、互いに交差する方向(より特定的には互いに直交する方向)である。図4~図6は、本実施の形態の半導体装置CPの要部断面図である。
図7は、本発明者が検討した検討例の半導体装置の要部平面図であり、図8は、本発明者が検討した検討例の半導体装置の要部断面図である。図7および図8には、検討例の半導体装置におけるダイオード形成領域が示されており、図7のB1-B1線の位置での断面図が、図8に対応している。
本実施の形態の半導体装置CPは、ダイオードDDを備える半導体装置である。半導体装置CPは、半導体基板SUBと、半導体基板SUB上に絶縁膜ZM(第1絶縁膜)を介して形成された、ダイオードDD用のシリコン膜SFと、シリコン膜SFよりも上層に形成された、配線M1A(第1電極)および配線M1C(第2電極)と、を有している。シリコン膜SFは、p型シリコン領域PS(第1シリコン領域)と複数のn型シリコン領域NS(第2シリコン領域)とを有し、複数のn型シリコン領域NSのそれぞれは、平面視においてp型シリコン領域PSにより囲まれている。シリコン膜SFのp型シリコン領域PSは、配線M1Aと電気的に接続され、シリコン膜SFの複数のn型シリコン領域NSは、配線M1Cと電気的に接続されている。
次に、本実施の形態の半導体装置の製造工程の一例について、図11~図32を参照して説明する。図11~図32は、本実施の形態の半導体装置の製造工程中の要部断面図である。なお、図11~図32のうち、図11、図13、図15、図17、図19、図21、図23、図25、図27、図29および図31には、上記図4に相当する断面(従ってダイオード形成領域RG1の断面)が示されている。また、図11~図32のうち、図12、図14、図16、図18、図20、図22、図24、図26、図28、図30および図32には、上記図6に相当する断面(従ってMOSFET形成領域RG2の断面)が示されている。
図33および図34は、本実施の形態の半導体装置の変形例の要部平面図であり、図35は、本実施の形態の半導体装置の変形例の要部断面図である。図33~図35は、上記実施の形態1の上記図2~図4にそれぞれ対応するものである。図33および図34のC1-C1線の位置での断面図が、図35にほぼ対応している。
図36および図37は、本実施の形態2の半導体装置の要部平面図であり、図38および図39は、本実施の形態2の半導体装置の要部断面図である。図36~図39は、上記実施の形態1の上記図2~図5にそれぞれ対応するものである。図36および図37のD1-D1線の位置での断面図が、図38にほぼ対応し、図36および図37のD2-D2線の位置での断面図が、図39にほぼ対応している。
図50および図51は、本実施の形態3の半導体装置の要部平面図であり、図52および図53は、本実施の形態3の半導体装置の要部断面図である。図50~図53は、上記実施の形態1の上記図2~図5にそれぞれ対応するものである。図50および図51のE1-E1線の位置での断面図が、図52にほぼ対応し、図50および図51のE2-E2線の位置での断面図が、図53にほぼ対応している。
DD,DD10 ダイオード
EP エピタキシャル層
GF ゲート絶縁膜
IL 絶縁膜
M1,M1A,M1A10,M1C,M1C10,M1S 配線
NR n+型半導体領域
NS,NS10 n型シリコン領域
OP1 開口部
PG,PGA,PGA10,PGC,PGC10,PGS プラグ
PR p型半導体領域
PS,PS10 p型シリコン領域
RG1 ダイオード形成領域
RG2 MOSFET形成領域
RP1,RP2 フォトレジストパターン
SB 基板本体
SF,SF10 シリコン膜
SUB 半導体基板
TG トレンチゲート電極
TR 溝
ZM,ZM10 絶縁膜
Claims (17)
- ダイオードを備える半導体装置であって、
半導体基板と、
前記半導体基板上に第1絶縁膜を介して形成された、前記ダイオード用のシリコン膜と、
前記シリコン膜よりも上層に形成された、前記ダイオード用の第1電極および第2電極と、
を有し、
前記シリコン膜は、第1導電型の第1シリコン領域と、前記第1導電型とは反対の第2導電型の複数の第2シリコン領域と、を有し、
前記複数の第2シリコン領域のそれぞれは、平面視において前記第1シリコン領域により囲まれており、
前記第1シリコン領域は、前記第1電極と電気的に接続され、
前記複数の第2シリコン領域は、前記第2電極と電気的に接続されている、半導体装置。 - 請求項1記載の半導体装置において、
前記複数の第2シリコン領域のそれぞれは、前記シリコン膜の上面に露出している、半導体装置。 - 請求項2記載の半導体装置において、
前記複数の第2シリコン領域のそれぞれの下には、前記第1シリコン領域が存在している、半導体装置。 - 請求項3記載の半導体装置において、
前記第1導電型はp型であり、
前記第2導電型はn型であり、
前記複数の第2シリコン領域のそれぞれの側面および底面に、PN接合が形成されている、半導体装置。 - 請求項2記載の半導体装置において、
前記複数の第2シリコン領域のそれぞれは、前記シリコン膜の下面に露出している、半導体装置。 - 請求項5記載の半導体装置において、
前記第1導電型はp型であり、
前記第2導電型はn型であり、
前記複数の第2シリコン領域のそれぞれの側面に、PN接合が形成されている、半導体装置。 - 請求項1記載の半導体装置において、
平面視において、前記複数の第2シリコン領域は、それぞれ第1方向に延在し、かつ、前記第1方向と交差する第2方向に互いに離間して並んでいる、半導体装置。 - 請求項7記載の半導体装置において、
平面視において、前記複数の第2シリコン領域は、それぞれ、前記第1方向を長手方向とする矩形状の平面形状を有する、半導体装置。 - 請求項8記載の半導体装置において、
前記複数の第2シリコン領域のそれぞれの平面形状の前記第1方向における長さは、2~40μmである、半導体装置。 - 請求項1記載の半導体装置において、
前記第1シリコン領域は、第1コンタクトプラグを介して前記第1電極と電気的に接続され、
前記複数の第2シリコン領域は、複数の第2コンタクトプラグを介して、前記第2電極と電気的に接続されている、半導体装置。 - 請求項10記載の半導体装置において、
前記シリコン膜と前記第1および第2電極との間に形成された層間絶縁膜を更に有し、
前記第1コンタクトプラグおよび複数の第2コンタクトプラグは、それぞれ、前記層間絶縁膜を貫通している、半導体装置。 - 請求項11記載の半導体装置において、
前記第1コンタクトプラグは、平面視において前記第1電極と重なり、かつ、平面視において前記第1シリコン領域と重なっており、
前記複数の第2コンタクトプラグは、平面視において前記複数の第2シリコン領域とそれぞれ重なり、かつ、平面視において前記第2電極と重なっている、半導体装置。 - 請求項1記載の半導体装置において、
前記第1導電型はp型であり、
前記第2導電型はn型であり、
前記第1シリコン領域と前記複数の第2シリコン領域との間に、PN接合が形成されている、半導体装置。 - 請求項1記載の半導体装置において、
前記半導体基板の第1領域に形成された電界効果トランジスタを更に有し、
前記シリコン膜は、前記半導体基板の第2領域上に前記第1絶縁膜を介して形成されている、半導体装置。 - 請求項1記載の半導体装置において、
前記ダイオードは、温度検知用ダイオードである、半導体装置。 - ダイオードを備える半導体装置の製造方法であって、
(a)半導体基板上に第1絶縁膜を介して前記ダイオード用の第1導電型のシリコン膜を形成する工程、
(b)前記シリコン膜を部分的に露出する開口部を有するマスク層を形成する工程、
(c)前記開口部から露出する前記シリコン膜に、前記第1導電型とは反対の第2導電型の不純物をイオン注入することにより、前記シリコン膜に前記第2導電型のシリコン領域を形成する工程、
(d)前記(c)工程後に、前記マスク層の前記開口部内にコンタクトプラグを形成する工程、
を有し、
前記マスク層は、層間絶縁膜であり、
前記(c)工程で形成された前記シリコン領域の厚さは、前記シリコン膜の厚さよりも小さく、
前記シリコン領域の側面および底面に、PN接合が形成される、半導体装置の製造方法。 - 請求項16記載の半導体装置の製造方法において、
(e)前記半導体基板に電界効果トランジスタ用のトレンチゲート電極を形成する工程、
(f)前記半導体基板に前記電界効果トランジスタ用のソース領域をイオン注入により形成する工程、
を更に有し、
前記(c)工程のイオン注入と、前記(f)工程のイオン注入とは、同じイオン注入工程により行われる、半導体装置の製造方法。
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