DE3783226D1 - Verfahren zur herstellung einer halbleitervorrichtung. - Google Patents
Verfahren zur herstellung einer halbleitervorrichtung.Info
- Publication number
- DE3783226D1 DE3783226D1 DE8787311426T DE3783226T DE3783226D1 DE 3783226 D1 DE3783226 D1 DE 3783226D1 DE 8787311426 T DE8787311426 T DE 8787311426T DE 3783226 T DE3783226 T DE 3783226T DE 3783226 D1 DE3783226 D1 DE 3783226D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61312015A JPH0738486B2 (ja) | 1986-12-26 | 1986-12-26 | 半導体レ−ザ装置の製造方法 |
JP62183986A JPS6428883A (en) | 1987-07-23 | 1987-07-23 | Manufacture of semiconductor laser device |
JP62277625A JPH01120086A (ja) | 1987-11-02 | 1987-11-02 | 半導体レーザ装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783226D1 true DE3783226D1 (de) | 1993-02-04 |
DE3783226T2 DE3783226T2 (de) | 1993-04-29 |
Family
ID=27325357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787311426T Expired - Fee Related DE3783226T2 (de) | 1986-12-26 | 1987-12-23 | Verfahren zur herstellung einer halbleitervorrichtung. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0273730B1 (de) |
DE (1) | DE3783226T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2636176B1 (fr) * | 1988-09-08 | 1990-12-07 | France Etat | Procede de realisation d'un laser a semi-conducteur a forte puissance d'emission et a grande bande passante a partir d'une structure a ruban enterre du type brs, et laser ainsi obtenu |
FR2637743B1 (fr) * | 1988-10-06 | 1994-07-29 | France Etat | Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser |
FR2647966B1 (fr) * | 1989-06-02 | 1991-08-16 | Thomson Hybrides | Laser semiconducteur a localisation de courant |
TW388144B (en) | 1997-09-30 | 2000-04-21 | Mitsui Chemicals Inc | Semiconductor laser device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
JPS59126693A (ja) * | 1983-01-10 | 1984-07-21 | Fujikura Ltd | 分布帰還型半導体レ−ザおよびその製造方法 |
JPS6037793A (ja) * | 1983-08-10 | 1985-02-27 | Nec Corp | 単一軸モ−ド半導体レ−ザ |
JPS60247985A (ja) * | 1984-05-23 | 1985-12-07 | Nec Corp | 分布帰還形半導体レ−ザ |
-
1987
- 1987-12-23 EP EP87311426A patent/EP0273730B1/de not_active Expired
- 1987-12-23 DE DE8787311426T patent/DE3783226T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0273730A3 (en) | 1989-02-15 |
EP0273730B1 (de) | 1992-12-23 |
DE3783226T2 (de) | 1993-04-29 |
EP0273730A2 (de) | 1988-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3485924T2 (de) | Verfahren zur herstellung einer halbleiterlaservorrichtung. | |
DE3686315D1 (de) | Verfahren zur herstellung einer halbleiterstruktur. | |
DE68907507D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung. | |
DE69015216T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
DE3788486D1 (de) | Verfahren zur Herstellung einer monolithischen Hochspannungshalbleiterschaltung. | |
DE68924366D1 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
DE69023558T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung. | |
DE69016955T2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung. | |
DE3582143D1 (de) | Verfahren zur herstellung einer halbleitervorrichtung. | |
DE69028397T2 (de) | Verfahren zur herstellung einer halbleitervorrichtung | |
DE3779802D1 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE3580559D1 (de) | Vorrichtung zur herstellung einer einkristallinen halbleiterverbindung. | |
DE69024731D1 (de) | Verfahren zur Herstellung einer plastikumhüllten Halbleiteranordnung | |
DE3789372T2 (de) | Verfahren zur Herstellung eines Halbleiterbauelements. | |
DE3484526D1 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE3580350D1 (de) | Verfahren zur herstellung einer frukto-oligosaccharose. | |
DE3486144T2 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE3578263D1 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE3783799T2 (de) | Verfahren zur herstellung einer halbleiteranordnung. | |
DE58903776D1 (de) | Verfahren zur herstellung einer riemenscheibe. | |
DE3783226T2 (de) | Verfahren zur herstellung einer halbleitervorrichtung. | |
DE3785287D1 (de) | Verfahren zur herstellung einer duennschicht-halbleiterdiodenanordnung. | |
DE3678191D1 (de) | Verfahren zur herstellung einer waermebehandelten prothetischen vorrichtung. | |
DE69023718T2 (de) | Verfahren zur Herstellung einer Verbindungshalbleiterschicht. | |
DE3784961D1 (de) | Verfahren zur herstellung einer verbindungsleitung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |