FR2637743B1 - Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser - Google Patents

Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Info

Publication number
FR2637743B1
FR2637743B1 FR8813106A FR8813106A FR2637743B1 FR 2637743 B1 FR2637743 B1 FR 2637743B1 FR 8813106 A FR8813106 A FR 8813106A FR 8813106 A FR8813106 A FR 8813106A FR 2637743 B1 FR2637743 B1 FR 2637743B1
Authority
FR
France
Prior art keywords
production
semiconductor laser
locking layer
buried tape
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8813106A
Other languages
English (en)
Other versions
FR2637743A1 (fr
Inventor
Jean-Claude Bouley
Christophe Kazmierski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etat Francais
Original Assignee
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etat Francais filed Critical Etat Francais
Priority to FR8813106A priority Critical patent/FR2637743B1/fr
Publication of FR2637743A1 publication Critical patent/FR2637743A1/fr
Application granted granted Critical
Publication of FR2637743B1 publication Critical patent/FR2637743B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8813106A 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser Expired - Fee Related FR2637743B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8813106A FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8813106A FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Publications (2)

Publication Number Publication Date
FR2637743A1 FR2637743A1 (fr) 1990-04-13
FR2637743B1 true FR2637743B1 (fr) 1994-07-29

Family

ID=9370744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8813106A Expired - Fee Related FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Country Status (1)

Country Link
FR (1) FR2637743B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2673330B1 (fr) * 1991-02-26 1997-06-20 France Telecom Procede de realisation d'un laser a semiconducteur a ruban enterre, utilisant une gravure seche pour former ce ruban, et laser obtenu par ce procede.
US6891665B2 (en) * 2001-11-02 2005-05-10 T-Networks, Inc. Semiconductor optical amplifier with reduced effects of gain saturation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052577B2 (ja) * 1979-03-26 1985-11-20 富士通株式会社 光半導体装置
JPS5712588A (en) * 1980-06-26 1982-01-22 Nec Corp Manufacture of buried type heterojunction laser element
FR2587852B1 (fr) * 1985-09-24 1989-04-07 Chaminant Guy Procede de realisation d'un laser a semiconducteur a ruban enterre avec ou sans reseau de diffraction et laser obtenu par ce procede
EP0273730B1 (fr) * 1986-12-26 1992-12-23 Matsushita Electric Industrial Co., Ltd. Méthode de fabrication d'un dispositif à semi-conducteur

Also Published As

Publication number Publication date
FR2637743A1 (fr) 1990-04-13

Similar Documents

Publication Publication Date Title
FR2567684B1 (fr) Module ayant un substrat ceramique multicouche et un circuit multicouche sur ce substrat et procede pour sa fabrication
IT1168243B (it) Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato per densita' di difetti
KR890015366A (ko) 반도체 박막형성법
KR860002135A (ko) 반도체기판의 주표면에 凹형 도랑이 형성된 반도체장치 및 그 제조방법
FR2543741B1 (fr) Procede de fabrication de supraconducteurs
FR2537607B1 (fr) Procede de fabrication d'une couche semi-conductrice monocristalline sur une couche isolante
FR2606223B1 (fr) Laser a semiconducteur et son procede de fabrication
KR930703807A (ko) 캐리어 테이프 및 그 제조방법
FR2574601B1 (fr) Procede de fabrication d'un laser a semi-conducteur a ruban enterre
KR890701803A (ko) 초전도체의 제조법
DE3855551D1 (de) Halbleiter-Laservorrichtung und deren Herstellungsverfahren
FR2575332B1 (fr) Dispositif semi-conducteur ayant une couche metallisee de plusieurs epaisseurs et procede pour sa fabrication
DE3780327T2 (de) Herstellungsverfahren einer halbleiter-kristallschicht.
FR2609576B1 (fr) Element a magnetoresistance et procede de fabrication
FR2630617B1 (fr) Procede de fabrication d'un substrat conducteur multicouche
FR2637743B1 (fr) Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser
KR890015347A (ko) 변형 초격자 구조층을 포함하는 반도체 기판
FR2589281B1 (fr) Dispositif a laser semiconducteur et son procede de fabrication
KR880700698A (ko) 메모리 디스크용 기판의 제조 방법
DE69117628T2 (de) Supraleitende Einrichtung mit einer reduzierten Dicke der supraleitenden Schicht und Methode zu deren Herstellung
DE59010851D1 (de) Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
NO830313L (no) Fremgangsmaate for fremstilling av et isolervindu med metalliske reflekterende sjikt
IT8367378A0 (it) Procedimento per la fabbricazione di superconduttori a 15 intrinseca mente multifilamentari e superconduttori ottenuti con tale procedimento
EP0416574A3 (en) E2prom with a floating gate formed in a semiconductor substrate and method of fabricating the same
ES535734A0 (es) Metodo para fijar una pluralidad de capas de material laminar sobre una superficie.

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse