DE3582024D1 - Hochleistungstransistor hoher geschwindigkeit. - Google Patents

Hochleistungstransistor hoher geschwindigkeit.

Info

Publication number
DE3582024D1
DE3582024D1 DE8585115751T DE3582024T DE3582024D1 DE 3582024 D1 DE3582024 D1 DE 3582024D1 DE 8585115751 T DE8585115751 T DE 8585115751T DE 3582024 T DE3582024 T DE 3582024T DE 3582024 D1 DE3582024 D1 DE 3582024D1
Authority
DE
Germany
Prior art keywords
speed
transistor
speed transistor
speed high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585115751T
Other languages
English (en)
Inventor
Keiichi Ohata
Hikaru Hida
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3582024D1 publication Critical patent/DE3582024D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE8585115751T 1984-12-12 1985-12-11 Hochleistungstransistor hoher geschwindigkeit. Expired - Fee Related DE3582024D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59262043A JP2604349B2 (ja) 1984-12-12 1984-12-12 半導体装置

Publications (1)

Publication Number Publication Date
DE3582024D1 true DE3582024D1 (de) 1991-04-11

Family

ID=17370232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585115751T Expired - Fee Related DE3582024D1 (de) 1984-12-12 1985-12-11 Hochleistungstransistor hoher geschwindigkeit.

Country Status (4)

Country Link
US (1) US4839703A (de)
EP (1) EP0184827B1 (de)
JP (1) JP2604349B2 (de)
DE (1) DE3582024D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150372A (ja) * 1984-12-25 1986-07-09 Sony Corp 半導体装置
US4729000A (en) * 1985-06-21 1988-03-01 Honeywell Inc. Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
US4866491A (en) * 1987-02-06 1989-09-12 International Business Machines Corporation Heterojunction field effect transistor having gate threshold voltage capability
JP2527775B2 (ja) * 1987-12-28 1996-08-28 三菱電機株式会社 電界効果トランジスタ及びその製造方法
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
JP2503616B2 (ja) * 1988-12-27 1996-06-05 日本電気株式会社 半導体装置
US5225895A (en) * 1989-12-20 1993-07-06 Sanyo Electric Co., Ltd. Velocity-modulation transistor with quantum well wire layer
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
US5180681A (en) * 1990-03-15 1993-01-19 North Carolina State University Method of making high current, high voltage breakdown field effect transistor
JP3147009B2 (ja) 1996-10-30 2001-03-19 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3127874B2 (ja) * 1998-02-12 2001-01-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP2000036591A (ja) * 1998-07-21 2000-02-02 Fujitsu Quantum Device Kk 半導体装置
KR100416442B1 (ko) * 1999-06-02 2004-01-31 아리조나 스테이트 유니버시티 전류제어 전계효과 트랜지스터
US6864131B2 (en) 1999-06-02 2005-03-08 Arizona State University Complementary Schottky junction transistors and methods of forming the same
US7589007B2 (en) 1999-06-02 2009-09-15 Arizona Board Of Regents For And On Behalf Of Arizona State University MESFETs integrated with MOSFETs on common substrate and methods of forming the same
AU2002235802B2 (en) 2000-12-23 2006-06-22 Aloys Wobben Rotor blade for a wind power installation
JP4224588B2 (ja) * 2002-05-24 2009-02-18 独立行政法人産業技術総合研究所 電気信号伝送線路
BR0311208B1 (pt) 2002-06-05 2012-06-26 lámina de rotor de uma instalação de energia eólica, e, instalação de energia eólica.
JP4712459B2 (ja) * 2005-07-08 2011-06-29 パナソニック株式会社 トランジスタ及びその動作方法
DE102017124861A1 (de) 2017-10-24 2019-04-25 Wobben Properties Gmbh Rotorblatt einer Windenergieanlage und Verfahren zu dessen Auslegung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911558A (en) * 1971-12-17 1975-10-14 Ibm Microampere space charge limited transistor
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
JPS5893380A (ja) * 1981-11-30 1983-06-03 Fujitsu Ltd 半導体装置
JPH0665216B2 (ja) * 1981-12-28 1994-08-22 日本電気株式会社 半導体装置
JPS58147169A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 高電子移動度トランジスタの製造方法
US4538165A (en) * 1982-03-08 1985-08-27 International Business Machines Corporation FET With heterojunction induced channel
JPS5932174A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions

Also Published As

Publication number Publication date
EP0184827B1 (de) 1991-03-06
JPS61140181A (ja) 1986-06-27
US4839703A (en) 1989-06-13
EP0184827A2 (de) 1986-06-18
EP0184827A3 (en) 1986-11-26
JP2604349B2 (ja) 1997-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee