DE3543937A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE3543937A1 DE3543937A1 DE19853543937 DE3543937A DE3543937A1 DE 3543937 A1 DE3543937 A1 DE 3543937A1 DE 19853543937 DE19853543937 DE 19853543937 DE 3543937 A DE3543937 A DE 3543937A DE 3543937 A1 DE3543937 A1 DE 3543937A1
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- semiconductor substrate
- layer
- trench
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59262207A JPS61140168A (ja) | 1984-12-12 | 1984-12-12 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3543937A1 true DE3543937A1 (de) | 1986-06-12 |
| DE3543937C2 DE3543937C2 (US06826419-20041130-M00005.png) | 1989-05-24 |
Family
ID=17372561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853543937 Granted DE3543937A1 (de) | 1984-12-12 | 1985-12-12 | Halbleitervorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS61140168A (US06826419-20041130-M00005.png) |
| KR (1) | KR900000635B1 (US06826419-20041130-M00005.png) |
| DE (1) | DE3543937A1 (US06826419-20041130-M00005.png) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223616A2 (en) * | 1985-11-20 | 1987-05-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device and manufacturing method |
| EP0294840A2 (en) * | 1987-06-12 | 1988-12-14 | Nec Corporation | Semiconductor memory device |
| DE3920646A1 (de) * | 1988-08-26 | 1990-03-08 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung |
| US5300800A (en) * | 1991-05-07 | 1994-04-05 | International Business Machines Corporation | Low leakage substrate plate DRAM cell |
| WO2002061806A2 (en) * | 2001-01-29 | 2002-08-08 | Monolithic System Technology, Inc. | Dram cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| US6570206B1 (en) * | 2000-03-29 | 2003-05-27 | Hitachi, Ltd. | Semiconductor device |
| US6677633B2 (en) | 2002-09-24 | 2004-01-13 | Hitachi, Ltd. | Semiconductor device |
| US6784048B2 (en) | 1998-08-14 | 2004-08-31 | Monolithic Systems Technology, Inc. | Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage |
| DE102004043858A1 (de) * | 2004-09-10 | 2006-03-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung |
| US7323379B2 (en) | 2005-02-03 | 2008-01-29 | Mosys, Inc. | Fabrication process for increased capacitance in an embedded DRAM memory |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61184861A (ja) * | 1985-02-12 | 1986-08-18 | Matsushita Electronics Corp | 半導体装置 |
| JP2767104B2 (ja) * | 1987-03-30 | 1998-06-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH05175452A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
| US7538371B2 (en) | 2005-09-01 | 2009-05-26 | United Microelectronics Corp. | CMOS image sensor integrated with 1-T SRAM and fabrication method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
| DE3414057A1 (de) * | 1983-04-15 | 1984-10-18 | Hitachi Ltd | Halbleiter-speichervorrichtung und verfahren zu deren herstellung |
-
1984
- 1984-12-12 JP JP59262207A patent/JPS61140168A/ja active Pending
-
1985
- 1985-11-27 KR KR1019850008857A patent/KR900000635B1/ko not_active IP Right Cessation
- 1985-12-12 DE DE19853543937 patent/DE3543937A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
| DE3414057A1 (de) * | 1983-04-15 | 1984-10-18 | Hitachi Ltd | Halbleiter-speichervorrichtung und verfahren zu deren herstellung |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223616A3 (en) * | 1985-11-20 | 1989-06-07 | Kabushiki Kaisha Toshiba | Semiconductor memory device and manufacturing method |
| EP0223616A2 (en) * | 1985-11-20 | 1987-05-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device and manufacturing method |
| EP0294840A2 (en) * | 1987-06-12 | 1988-12-14 | Nec Corporation | Semiconductor memory device |
| EP0294840A3 (en) * | 1987-06-12 | 1989-11-29 | Nec Corporation | Semiconductor memory device |
| DE3920646A1 (de) * | 1988-08-26 | 1990-03-08 | Mitsubishi Electric Corp | Halbleiterspeichereinrichtung |
| US5300800A (en) * | 1991-05-07 | 1994-04-05 | International Business Machines Corporation | Low leakage substrate plate DRAM cell |
| US6744676B2 (en) | 1998-08-14 | 2004-06-01 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| US6784048B2 (en) | 1998-08-14 | 2004-08-31 | Monolithic Systems Technology, Inc. | Method of fabricating a DRAM cell having a thin dielectric access transistor and a thick dielectric storage |
| US6570206B1 (en) * | 2000-03-29 | 2003-05-27 | Hitachi, Ltd. | Semiconductor device |
| WO2002061806A2 (en) * | 2001-01-29 | 2002-08-08 | Monolithic System Technology, Inc. | Dram cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| WO2002061806A3 (en) * | 2001-01-29 | 2003-09-18 | Monolithic System Tech Inc | Dram cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| US6677633B2 (en) | 2002-09-24 | 2004-01-13 | Hitachi, Ltd. | Semiconductor device |
| DE102004043858A1 (de) * | 2004-09-10 | 2006-03-16 | Infineon Technologies Ag | Verfahren zur Herstellung einer Speicherzelle, einer Speicherzellenanordnung und Speicherzellenanordnung |
| US7323379B2 (en) | 2005-02-03 | 2008-01-29 | Mosys, Inc. | Fabrication process for increased capacitance in an embedded DRAM memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61140168A (ja) | 1986-06-27 |
| KR900000635B1 (ko) | 1990-02-01 |
| KR860005447A (ko) | 1986-07-23 |
| DE3543937C2 (US06826419-20041130-M00005.png) | 1989-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) |