DE3382802T2 - Halbleiterspeichergerät - Google Patents

Halbleiterspeichergerät

Info

Publication number
DE3382802T2
DE3382802T2 DE3382802T DE3382802T DE3382802T2 DE 3382802 T2 DE3382802 T2 DE 3382802T2 DE 3382802 T DE3382802 T DE 3382802T DE 3382802 T DE3382802 T DE 3382802T DE 3382802 T2 DE3382802 T2 DE 3382802T2
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3382802T
Other languages
English (en)
Other versions
DE3382802D1 (de
Inventor
Hiroshi Iwahashi
Kiyofumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3382802D1 publication Critical patent/DE3382802D1/de
Application granted granted Critical
Publication of DE3382802T2 publication Critical patent/DE3382802T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
DE3382802T 1982-05-28 1983-05-25 Halbleiterspeichergerät Expired - Fee Related DE3382802T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57089891A JPS58208998A (ja) 1982-05-28 1982-05-28 半導体ｃｍｏｓメモリ

Publications (2)

Publication Number Publication Date
DE3382802D1 DE3382802D1 (de) 1996-03-28
DE3382802T2 true DE3382802T2 (de) 1996-07-25

Family

ID=13983359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3382802T Expired - Fee Related DE3382802T2 (de) 1982-05-28 1983-05-25 Halbleiterspeichergerät

Country Status (4)

Country Link
US (1) US4639895A (de)
EP (1) EP0095721B1 (de)
JP (1) JPS58208998A (de)
DE (1) DE3382802T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178691A (ja) * 1983-03-29 1984-10-09 Fujitsu Ltd 半導体記憶装置
DE3485188D1 (de) * 1983-03-28 1991-11-28 Fujitsu Ltd Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen.
JPS60191500A (ja) * 1984-03-08 1985-09-28 Sharp Corp 冗長回路
JPS60195797A (ja) * 1984-03-16 1985-10-04 Mitsubishi Electric Corp 半導体記憶装置の冗長回路
JPS6177946A (ja) * 1984-09-26 1986-04-21 Hitachi Ltd 半導体記憶装置
EP0186175A3 (de) * 1984-12-24 1989-02-08 Nec Corporation Halbleiterspeichergerät mit Redundanzstruktur
FR2576133B1 (fr) * 1985-01-15 1991-04-26 Eurotechnique Sa Memoire en circuit integre a haute fiabilite
JPS62157400A (ja) * 1985-12-27 1987-07-13 Fujitsu Ltd 半導体記憶回路
US4689494A (en) * 1986-09-18 1987-08-25 Advanced Micro Devices, Inc. Redundancy enable/disable circuit
JPS6376189A (ja) * 1986-09-19 1988-04-06 Nec Corp 半導体記憶回路
JPS6390094A (ja) * 1986-10-01 1988-04-20 Nec Corp 半導体記憶回路
US4837747A (en) * 1986-11-29 1989-06-06 Mitsubishi Denki Kabushiki Kaisha Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
JPS63197091A (ja) * 1987-02-12 1988-08-15 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0766675B2 (ja) * 1987-07-14 1995-07-19 株式会社東芝 プログラマブルｒｏｍ
JPH0682807B2 (ja) * 1988-09-12 1994-10-19 株式会社東芝 半導体メモリ
JPH02146185A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体メモリ装置
WO1990012401A1 (en) * 1989-04-13 1990-10-18 Dallas Semiconductor Corporation Memory with power supply intercept and redundancy logic
US5235548A (en) * 1989-04-13 1993-08-10 Dallas Semiconductor Corp. Memory with power supply intercept in redundancy logic
JPH03245400A (ja) * 1990-02-21 1991-10-31 Mitsubishi Electric Corp 半導体メモリ装置
US5173905A (en) * 1990-03-29 1992-12-22 Micron Technology, Inc. Parity and error correction coding on integrated circuit addresses
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
JP2782948B2 (ja) * 1990-11-16 1998-08-06 日本電気株式会社 半導体メモリ
JP3354231B2 (ja) * 1993-09-29 2002-12-09 三菱電機エンジニアリング株式会社 半導体装置
KR0157344B1 (ko) * 1995-05-25 1998-12-01 김광호 반도체 메모리 장치의 퓨즈소자 회로
KR0157339B1 (ko) * 1995-06-28 1998-12-01 김광호 반도체 메모리의 불량셀 구제회로
KR100247920B1 (ko) 1996-12-31 2000-03-15 윤종용 반도체메모리장치의로우리던던시구조및불량셀구제방법
KR100339024B1 (ko) * 1998-03-28 2002-09-18 주식회사 하이닉스반도체 플래쉬메모리장치의센스앰프회로
KR100320683B1 (ko) * 2000-02-03 2002-01-17 윤종용 스탠바이 전류불량 구제기능을 가지는 반도체 메모리 장치
US7437632B2 (en) * 2003-06-24 2008-10-14 Micron Technology, Inc. Circuits and methods for repairing defects in memory devices
KR100550634B1 (ko) * 2003-10-31 2006-02-10 주식회사 하이닉스반도체 셀프리프레쉬 주기 발생 장치
US20060097339A1 (en) * 2004-11-10 2006-05-11 Sullivan Thomas J Integrated circuits including auxiliary resources
JP4614775B2 (ja) * 2005-01-14 2011-01-19 パナソニック株式会社 電気ヒューズ回路
JP5104123B2 (ja) * 2007-08-17 2012-12-19 富士通セミコンダクター株式会社 半導体メモリ
US8194481B2 (en) * 2008-12-18 2012-06-05 Mosaid Technologies Incorporated Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
TW201029012A (en) * 2009-01-23 2010-08-01 Nanya Technology Corp Operation method of suppressing current leakage in a memory and access method for the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758761A (en) * 1971-08-17 1973-09-11 Texas Instruments Inc Self-interconnecting/self-repairable electronic systems on a slice
JPS5373088A (en) * 1976-12-13 1978-06-29 Fujitsu Ltd Semiconductor element
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
DE3071955D1 (en) * 1979-06-15 1987-05-27 Fujitsu Ltd Semiconductor memory device
JPS563499A (en) * 1979-06-25 1981-01-14 Fujitsu Ltd Semiconductor memory device
JPS5683899A (en) * 1979-12-12 1981-07-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
US4354217A (en) * 1980-07-07 1982-10-12 Burroughs Corporation Automatic power disconnect system for wafer scale integrated circuits

Also Published As

Publication number Publication date
EP0095721A3 (en) 1987-05-06
JPS58208998A (ja) 1983-12-05
EP0095721B1 (de) 1996-02-14
DE3382802D1 (de) 1996-03-28
EP0095721A2 (de) 1983-12-07
JPS6240795B2 (de) 1987-08-31
US4639895A (en) 1987-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee