DE69428393T2 - Apparat zur Speicherwiederherstellung mittels Redundanz - Google Patents

Apparat zur Speicherwiederherstellung mittels Redundanz

Info

Publication number
DE69428393T2
DE69428393T2 DE69428393T DE69428393T DE69428393T2 DE 69428393 T2 DE69428393 T2 DE 69428393T2 DE 69428393 T DE69428393 T DE 69428393T DE 69428393 T DE69428393 T DE 69428393T DE 69428393 T2 DE69428393 T2 DE 69428393T2
Authority
DE
Germany
Prior art keywords
redundancy
recovery apparatus
memory recovery
memory
recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428393T
Other languages
English (en)
Other versions
DE69428393D1 (de
Inventor
Michael James Griffus
Robert Gary Pollachek
Giao Ngoc Pham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Sharp Electronics Corp
Original Assignee
Sharp Corp
Sharp Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Sharp Electronics Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69428393D1 publication Critical patent/DE69428393D1/de
Publication of DE69428393T2 publication Critical patent/DE69428393T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/814—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for optimized yield
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
DE69428393T 1993-04-08 1994-04-08 Apparat zur Speicherwiederherstellung mittels Redundanz Expired - Lifetime DE69428393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/044,958 US5323353A (en) 1993-04-08 1993-04-08 Method and apparatus for repair of memory by redundancy

Publications (2)

Publication Number Publication Date
DE69428393D1 DE69428393D1 (de) 2001-10-31
DE69428393T2 true DE69428393T2 (de) 2002-07-04

Family

ID=21935238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428393T Expired - Lifetime DE69428393T2 (de) 1993-04-08 1994-04-08 Apparat zur Speicherwiederherstellung mittels Redundanz

Country Status (5)

Country Link
US (2) US5323353A (de)
EP (1) EP0619545B1 (de)
JP (1) JP3253446B2 (de)
KR (1) KR970002071B1 (de)
DE (1) DE69428393T2 (de)

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* Cited by examiner, † Cited by third party
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JPH06162784A (ja) * 1992-11-17 1994-06-10 Oki Micro Design Miyazaki:Kk 半導体集積回路装置
US5424672A (en) * 1994-02-24 1995-06-13 Micron Semiconductor, Inc. Low current redundancy fuse assembly
US5945840A (en) * 1994-02-24 1999-08-31 Micron Technology, Inc. Low current redundancy anti-fuse assembly
US5552743A (en) * 1994-09-27 1996-09-03 Micron Technology, Inc. Thin film transistor redundancy structure
US5768206A (en) * 1995-06-07 1998-06-16 Sgs-Thomson Microelectronics, Inc. Circuit and method for biasing bit lines
US5793942A (en) * 1996-03-26 1998-08-11 Lucent Technologies Inc. Memory chip architecture and packaging method for increased production yield
KR100248350B1 (ko) * 1996-12-31 2000-03-15 김영환 메모리 장치용 휴즈 옵션 회로
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5917763A (en) * 1997-09-12 1999-06-29 Micron Technology, Inc. Method and apparatus for repairing opens on global column lines
US6005813A (en) * 1997-11-12 1999-12-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
KR100519512B1 (ko) 1998-12-30 2005-11-25 주식회사 하이닉스반도체 앤티퓨즈를 이용한 저전력 칼럼 리페어 회로
US6240033B1 (en) 1999-01-11 2001-05-29 Hyundai Electronics Industries Co., Ltd. Antifuse circuitry for post-package DRAM repair
US6259309B1 (en) 1999-05-05 2001-07-10 International Business Machines Corporation Method and apparatus for the replacement of non-operational metal lines in DRAMS
US6288436B1 (en) * 1999-07-27 2001-09-11 International Business Machines Corporation Mixed fuse technologies
US6249464B1 (en) 1999-12-15 2001-06-19 Cypress Semiconductor Corp. Block redundancy in ultra low power memory circuits
US6967348B2 (en) * 2002-06-20 2005-11-22 Micron Technology, Inc. Signal sharing circuit with microelectric die isolation features
US7026646B2 (en) * 2002-06-20 2006-04-11 Micron Technology, Inc. Isolation circuit
US6879530B2 (en) * 2002-07-18 2005-04-12 Micron Technology, Inc. Apparatus for dynamically repairing a semiconductor memory
DE60238192D1 (de) * 2002-09-30 2010-12-16 St Microelectronics Srl Verfahren zur Ersetzung von ausgefallenen nichtflüchtigen Speicherzellen und dementsprechende Speicheranordnung
US7274607B2 (en) * 2005-06-15 2007-09-25 Micron Technology, Inc. Bitline exclusion in verification operation
US7215586B2 (en) * 2005-06-29 2007-05-08 Micron Technology, Inc. Apparatus and method for repairing a semiconductor memory
US20070081409A1 (en) * 2005-09-23 2007-04-12 Wuu John J Reduced bitline leakage current
DE102005046981B4 (de) * 2005-09-30 2010-04-15 Qimonda Ag Speicher und Verfahren zum Verbessern der Zuverlässigkeit eines Speichers mit einem benutzten Speicherbereich und einem unbenutzten Speicherbereich
DE102005061719B3 (de) 2005-12-22 2007-05-16 Infineon Technologies Ag Speichervorrichtung mit Fuse-Speicherelementen
US7679974B2 (en) * 2006-10-19 2010-03-16 Freescale Semiconductor, Inc. Memory device having selectively decoupleable memory portions and method thereof
US7639535B2 (en) * 2006-11-17 2009-12-29 Intel Corporation Detection and correction of defects in semiconductor memories
JP5106151B2 (ja) * 2008-01-28 2012-12-26 株式会社東芝 積層型スタックｎａｎｄメモリ及び半導体装置
CN105684086A (zh) * 2013-09-27 2016-06-15 慧与发展有限责任合伙企业 存储器模块上的存储器备用
WO2015084381A1 (en) * 2013-12-05 2015-06-11 Intel Corporation Memory cell with retention using resistive memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250570B1 (en) * 1976-07-15 1996-01-02 Intel Corp Redundant memory circuit
DE3485188D1 (de) * 1983-03-28 1991-11-28 Fujitsu Ltd Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen.
FR2576133B1 (fr) * 1985-01-15 1991-04-26 Eurotechnique Sa Memoire en circuit integre a haute fiabilite
US4758994A (en) * 1986-01-17 1988-07-19 Texas Instruments Incorporated On chip voltage regulator for common collector matrix programmable memory array
JP3001252B2 (ja) * 1990-11-16 2000-01-24 株式会社日立製作所 半導体メモリ
JP2782948B2 (ja) * 1990-11-16 1998-08-06 日本電気株式会社 半導体メモリ
JP3115623B2 (ja) * 1991-02-25 2000-12-11 株式会社日立製作所 スタティック型ｒａｍ
JP2629475B2 (ja) * 1991-04-04 1997-07-09 松下電器産業株式会社 半導体集積回路
JP2754953B2 (ja) * 1991-05-17 1998-05-20 日本電気株式会社 半導体メモリ装置
JPH05307899A (ja) * 1992-04-24 1993-11-19 Samsung Electron Co Ltd 半導体メモリ装置

Also Published As

Publication number Publication date
US5323353A (en) 1994-06-21
EP0619545A3 (de) 1996-10-16
JPH0773693A (ja) 1995-03-17
KR940024595A (ko) 1994-11-18
US5502674A (en) 1996-03-26
JP3253446B2 (ja) 2002-02-04
DE69428393D1 (de) 2001-10-31
EP0619545A2 (de) 1994-10-12
EP0619545B1 (de) 2001-09-26
KR970002071B1 (ko) 1997-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition