DE3309598C2 - Verfahren zur Herstellung von Kristallen - Google Patents

Verfahren zur Herstellung von Kristallen

Info

Publication number
DE3309598C2
DE3309598C2 DE3309598A DE3309598A DE3309598C2 DE 3309598 C2 DE3309598 C2 DE 3309598C2 DE 3309598 A DE3309598 A DE 3309598A DE 3309598 A DE3309598 A DE 3309598A DE 3309598 C2 DE3309598 C2 DE 3309598C2
Authority
DE
Germany
Prior art keywords
group
pressure
range
crystals
solutions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3309598A
Other languages
German (de)
English (en)
Other versions
DE3309598A1 (de
Inventor
Günter Dipl.-Ing. Graz Engel
Hermenegild Dr. Mang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AVL List GmbH
Original Assignee
AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH filed Critical AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH
Publication of DE3309598A1 publication Critical patent/DE3309598A1/de
Application granted granted Critical
Publication of DE3309598C2 publication Critical patent/DE3309598C2/de
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/14Phosphates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
DE3309598A 1982-03-30 1983-03-17 Verfahren zur Herstellung von Kristallen Expired DE3309598C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0126082A AT379831B (de) 1982-03-30 1982-03-30 Verfahren zur herstellung von kristallen

Publications (2)

Publication Number Publication Date
DE3309598A1 DE3309598A1 (de) 1983-12-08
DE3309598C2 true DE3309598C2 (de) 1986-06-05

Family

ID=3510045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3309598A Expired DE3309598C2 (de) 1982-03-30 1983-03-17 Verfahren zur Herstellung von Kristallen

Country Status (7)

Country Link
US (1) US4678535A (enExample)
JP (1) JPS58181786A (enExample)
AT (1) AT379831B (enExample)
CH (1) CH658675A5 (enExample)
DE (1) DE3309598C2 (enExample)
FR (1) FR2524497B1 (enExample)
GB (1) GB2119778B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559166B1 (fr) * 1984-02-08 1986-06-13 Centre Nat Rech Scient Procede de croissance de cristaux d'arseniate d'aluminium
US4735806A (en) * 1984-04-13 1988-04-05 Union Carbide Corporation Gallium-aluminum-phosphorus-silicon-oxide molecular sieve compositions
US5032368A (en) * 1984-04-13 1991-07-16 Uop Gallium-aluminum-phosphorus-oxide molecular sieve compositions
US4663139A (en) * 1985-12-16 1987-05-05 Union Carbide Corporation Crystalline AlPO4 -39
US4799942A (en) * 1985-12-20 1989-01-24 Uop Crystalline gallophosphate compositions
FR2595344B1 (fr) * 1986-03-04 1988-06-24 Centre Nat Rech Scient Procede de preparation de cristaux de berlinite a haut coefficient de surtension
AT395439B (de) * 1987-09-04 1992-12-28 Avl Verbrennungskraft Messtech Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
DE3870812D1 (de) * 1987-11-11 1992-06-11 Avl Verbrennungskraft Messtech Verfahren zur verringerung des wassergehaltes in piezoelektrischen galliumphosphat-kristallelementen.
AT393182B (de) * 1987-11-11 1991-08-26 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement und verfahren zur herstellung
AT390853B (de) * 1988-11-25 1990-07-10 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement auf der basis von gapo4
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
JP5981781B2 (ja) 2012-06-20 2016-08-31 株式会社エム・アイ・ケー 食品炒め機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE913649C (de) * 1943-06-26 1954-06-18 Dr Immanuel Franke Verfahren und Vorrichtung zur Erzeugung von Einkristallen bzw. Kristallaggregaten, insbesondere aus schwer und sehr schwer loeslichen Stoffen
US4242358A (en) * 1979-01-24 1980-12-30 Societe De Recherches Industrielles (Sori) Method of treatment of algiae
US4247358A (en) * 1979-06-08 1981-01-27 The United States Of America As Represented By The Secretary Of The Army Method of growing single crystals of alpha aluminum phosphate
US4300979A (en) * 1980-11-03 1981-11-17 Bell Telephone Laboratories, Incorporated Growth of AlPO4 crystals
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus
US4579622A (en) * 1983-10-17 1986-04-01 At&T Bell Laboratories Hydrothermal crystal growth processes

Also Published As

Publication number Publication date
AT379831B (de) 1986-03-10
JPH0323516B2 (enExample) 1991-03-29
JPS58181786A (ja) 1983-10-24
GB8307388D0 (en) 1983-04-27
ATA126082A (de) 1985-07-15
DE3309598A1 (de) 1983-12-08
US4678535A (en) 1987-07-07
GB2119778B (en) 1985-05-01
CH658675A5 (de) 1986-11-28
GB2119778A (en) 1983-11-23
FR2524497B1 (fr) 1986-02-21
FR2524497A1 (fr) 1983-10-07

Similar Documents

Publication Publication Date Title
DE3309598C2 (de) Verfahren zur Herstellung von Kristallen
DE645128C (de) Verfahren zur Herstellung von Glasgegenstaenden
DE3782626T2 (de) Verfahren zur trennung und rueckgewinnung von borverbindungen aus einer geothermischen sole.
DE2407019B2 (de) Verfahren zur rueckgewinnung von nichtumgesetztem ammoniumcarbamat bei der harnstoffsynthese
DE2739267C2 (enExample)
DE2548470A1 (de) Verfahren zur herstellung einer komplexverbindung aus di-(4-hydroxyphenyl)-2,2-propan und phenol
DE3632623A1 (de) Verfahren zum aufkonzentrieren von schwefelsaeure
DE1567575C3 (de) Verfahren zur Herstellung von Chlor
DE2115094A1 (de) Verfahren zur kontinuierlichen Herstellung einer wäßrigen Cholinchloridlösung
DE1914242A1 (de) Verfahren zur Herstellung von Halbleiterverbindungen
DE2300349A1 (de) Verfahren zur isolation von diarylaminen in fester form
DE654395C (de) Verfahren zur Herstellung von 1, 2-Diaminobenzol
DE184144C (enExample)
AT236988B (de) Verfahren zur Herstellung von Ammoniumchlorid
DE747119C (de) Verfahren zur Herstellung einer von Verunreinigungen freien und besonders zur aeusserlichen Anwendung geeigneten Sulfanilamidverbindung
DE522061C (de) Verfahren zur Herstellung von Eiweissspaltprodukten
AT212278B (de) Verfahren zur Herstellung von Bariumbromit durch Disproportionierung von Bariumhypobromit
AT396947B (de) Verfahren zur herstellung von kristallen
DE670420C (de) Verfahren zur Herstellung von Sulfonaethylaminen
DE1468245A1 (de) Verfahren zur Rueckfuehrung von nicht umgesetztem Carbamat bei der Harnstoffsynthese aus Ammoniak und Kohlendioxyd
DE1493876A1 (de) Spaltung von d,l-Glutaminsaeure
DE875657C (de) Verfahren zur Darstellung von 16, 17-Diketonen der Oestran- und Androstanreihe
DE894557C (de) Verfahren zur Herstellung von reinstem Aluminiumacetat mit niedrigem Essigsaeuregehalt
DE535077C (de) Verfahren zur Darstellung der festen Ammonium- oder Alkalisalze des N-Nitrosophenylhydroxylamins
DE2119064C3 (de) Verfahren zur Gewinnung von Tetra cychn

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee