FR2524497B1 - Procede de preparation de cristaux de la classe de symetrie ponctuelle 32 et de formule brute chimique a bo4 - Google Patents

Procede de preparation de cristaux de la classe de symetrie ponctuelle 32 et de formule brute chimique a bo4

Info

Publication number
FR2524497B1
FR2524497B1 FR8304600A FR8304600A FR2524497B1 FR 2524497 B1 FR2524497 B1 FR 2524497B1 FR 8304600 A FR8304600 A FR 8304600A FR 8304600 A FR8304600 A FR 8304600A FR 2524497 B1 FR2524497 B1 FR 2524497B1
Authority
FR
France
Prior art keywords
crystals
chemical
formula
preparation
symmetry class
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8304600A
Other languages
English (en)
Other versions
FR2524497A1 (fr
Inventor
Hermenegild Mang
Gunter Engel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AVL List GmbH
Original Assignee
AVL List GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVL List GmbH filed Critical AVL List GmbH
Publication of FR2524497A1 publication Critical patent/FR2524497A1/fr
Application granted granted Critical
Publication of FR2524497B1 publication Critical patent/FR2524497B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
FR8304600A 1982-03-30 1983-03-21 Procede de preparation de cristaux de la classe de symetrie ponctuelle 32 et de formule brute chimique a bo4 Expired FR2524497B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0126082A AT379831B (de) 1982-03-30 1982-03-30 Verfahren zur herstellung von kristallen

Publications (2)

Publication Number Publication Date
FR2524497A1 FR2524497A1 (fr) 1983-10-07
FR2524497B1 true FR2524497B1 (fr) 1986-02-21

Family

ID=3510045

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8304600A Expired FR2524497B1 (fr) 1982-03-30 1983-03-21 Procede de preparation de cristaux de la classe de symetrie ponctuelle 32 et de formule brute chimique a bo4

Country Status (7)

Country Link
US (1) US4678535A (fr)
JP (1) JPS58181786A (fr)
AT (1) AT379831B (fr)
CH (1) CH658675A5 (fr)
DE (1) DE3309598C2 (fr)
FR (1) FR2524497B1 (fr)
GB (1) GB2119778B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559166B1 (fr) * 1984-02-08 1986-06-13 Centre Nat Rech Scient Procede de croissance de cristaux d'arseniate d'aluminium
US4735806A (en) * 1984-04-13 1988-04-05 Union Carbide Corporation Gallium-aluminum-phosphorus-silicon-oxide molecular sieve compositions
US5032368A (en) * 1984-04-13 1991-07-16 Uop Gallium-aluminum-phosphorus-oxide molecular sieve compositions
US4663139A (en) * 1985-12-16 1987-05-05 Union Carbide Corporation Crystalline AlPO4 -39
US4799942A (en) * 1985-12-20 1989-01-24 Uop Crystalline gallophosphate compositions
FR2595344B1 (fr) * 1986-03-04 1988-06-24 Centre Nat Rech Scient Procede de preparation de cristaux de berlinite a haut coefficient de surtension
AT395439B (de) * 1987-09-04 1992-12-28 Avl Verbrennungskraft Messtech Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
AT393182B (de) * 1987-11-11 1991-08-26 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement und verfahren zur herstellung
DE3870812D1 (de) * 1987-11-11 1992-06-11 Avl Verbrennungskraft Messtech Verfahren zur verringerung des wassergehaltes in piezoelektrischen galliumphosphat-kristallelementen.
AT390853B (de) * 1988-11-25 1990-07-10 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement auf der basis von gapo4
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
JP5981781B2 (ja) 2012-06-20 2016-08-31 株式会社エム・アイ・ケー 食品炒め機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE913649C (de) * 1943-06-26 1954-06-18 Dr Immanuel Franke Verfahren und Vorrichtung zur Erzeugung von Einkristallen bzw. Kristallaggregaten, insbesondere aus schwer und sehr schwer loeslichen Stoffen
US4242358A (en) * 1979-01-24 1980-12-30 Societe De Recherches Industrielles (Sori) Method of treatment of algiae
US4247358A (en) * 1979-06-08 1981-01-27 The United States Of America As Represented By The Secretary Of The Army Method of growing single crystals of alpha aluminum phosphate
US4300979A (en) * 1980-11-03 1981-11-17 Bell Telephone Laboratories, Incorporated Growth of AlPO4 crystals
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus
US4579622A (en) * 1983-10-17 1986-04-01 At&T Bell Laboratories Hydrothermal crystal growth processes

Also Published As

Publication number Publication date
GB2119778B (en) 1985-05-01
DE3309598A1 (de) 1983-12-08
AT379831B (de) 1986-03-10
JPH0323516B2 (fr) 1991-03-29
CH658675A5 (de) 1986-11-28
JPS58181786A (ja) 1983-10-24
GB8307388D0 (en) 1983-04-27
DE3309598C2 (de) 1986-06-05
GB2119778A (en) 1983-11-23
ATA126082A (de) 1985-07-15
US4678535A (en) 1987-07-07
FR2524497A1 (fr) 1983-10-07

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Legal Events

Date Code Title Description
ST Notification of lapse