GB2119778B - A process of producing crystals - Google Patents

A process of producing crystals

Info

Publication number
GB2119778B
GB2119778B GB08307388A GB8307388A GB2119778B GB 2119778 B GB2119778 B GB 2119778B GB 08307388 A GB08307388 A GB 08307388A GB 8307388 A GB8307388 A GB 8307388A GB 2119778 B GB2119778 B GB 2119778B
Authority
GB
United Kingdom
Prior art keywords
producing crystals
crystals
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08307388A
Other languages
English (en)
Other versions
GB2119778A (en
GB8307388D0 (en
Inventor
Hermengild Mang
Gunter Engel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AVL List GmbH
Original Assignee
AVL List GmbH
AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVL List GmbH, AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH filed Critical AVL List GmbH
Publication of GB8307388D0 publication Critical patent/GB8307388D0/en
Publication of GB2119778A publication Critical patent/GB2119778A/en
Application granted granted Critical
Publication of GB2119778B publication Critical patent/GB2119778B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
GB08307388A 1982-03-30 1983-03-17 A process of producing crystals Expired GB2119778B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0126082A AT379831B (de) 1982-03-30 1982-03-30 Verfahren zur herstellung von kristallen

Publications (3)

Publication Number Publication Date
GB8307388D0 GB8307388D0 (en) 1983-04-27
GB2119778A GB2119778A (en) 1983-11-23
GB2119778B true GB2119778B (en) 1985-05-01

Family

ID=3510045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08307388A Expired GB2119778B (en) 1982-03-30 1983-03-17 A process of producing crystals

Country Status (7)

Country Link
US (1) US4678535A (enExample)
JP (1) JPS58181786A (enExample)
AT (1) AT379831B (enExample)
CH (1) CH658675A5 (enExample)
DE (1) DE3309598C2 (enExample)
FR (1) FR2524497B1 (enExample)
GB (1) GB2119778B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559166B1 (fr) * 1984-02-08 1986-06-13 Centre Nat Rech Scient Procede de croissance de cristaux d'arseniate d'aluminium
US4735806A (en) * 1984-04-13 1988-04-05 Union Carbide Corporation Gallium-aluminum-phosphorus-silicon-oxide molecular sieve compositions
US5032368A (en) * 1984-04-13 1991-07-16 Uop Gallium-aluminum-phosphorus-oxide molecular sieve compositions
US4663139A (en) * 1985-12-16 1987-05-05 Union Carbide Corporation Crystalline AlPO4 -39
US4799942A (en) * 1985-12-20 1989-01-24 Uop Crystalline gallophosphate compositions
FR2595344B1 (fr) * 1986-03-04 1988-06-24 Centre Nat Rech Scient Procede de preparation de cristaux de berlinite a haut coefficient de surtension
AT395439B (de) * 1987-09-04 1992-12-28 Avl Verbrennungskraft Messtech Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
AT393182B (de) * 1987-11-11 1991-08-26 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement und verfahren zur herstellung
EP0316298B1 (de) * 1987-11-11 1992-05-06 AVL Gesellschaft für Verbrennungskraftmaschinen und Messtechnik mbH.Prof.Dr.Dr.h.c. Hans List Verfahren zur Verringerung des Wassergehaltes in piezoelektrischen Galliumphosphat-Kristallelementen
AT390853B (de) * 1988-11-25 1990-07-10 Avl Verbrennungskraft Messtech Piezoelektrisches kristallelement auf der basis von gapo4
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
JP5981781B2 (ja) 2012-06-20 2016-08-31 株式会社エム・アイ・ケー 食品炒め機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE913649C (de) * 1943-06-26 1954-06-18 Dr Immanuel Franke Verfahren und Vorrichtung zur Erzeugung von Einkristallen bzw. Kristallaggregaten, insbesondere aus schwer und sehr schwer loeslichen Stoffen
US4242358A (en) * 1979-01-24 1980-12-30 Societe De Recherches Industrielles (Sori) Method of treatment of algiae
US4247358A (en) * 1979-06-08 1981-01-27 The United States Of America As Represented By The Secretary Of The Army Method of growing single crystals of alpha aluminum phosphate
US4300979A (en) * 1980-11-03 1981-11-17 Bell Telephone Laboratories, Incorporated Growth of AlPO4 crystals
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus
US4579622A (en) * 1983-10-17 1986-04-01 At&T Bell Laboratories Hydrothermal crystal growth processes

Also Published As

Publication number Publication date
AT379831B (de) 1986-03-10
US4678535A (en) 1987-07-07
CH658675A5 (de) 1986-11-28
FR2524497A1 (fr) 1983-10-07
JPS58181786A (ja) 1983-10-24
JPH0323516B2 (enExample) 1991-03-29
GB2119778A (en) 1983-11-23
ATA126082A (de) 1985-07-15
GB8307388D0 (en) 1983-04-27
FR2524497B1 (fr) 1986-02-21
DE3309598C2 (de) 1986-06-05
DE3309598A1 (de) 1983-12-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000317