DE3300400C2 - - Google Patents

Info

Publication number
DE3300400C2
DE3300400C2 DE3300400A DE3300400A DE3300400C2 DE 3300400 C2 DE3300400 C2 DE 3300400C2 DE 3300400 A DE3300400 A DE 3300400A DE 3300400 A DE3300400 A DE 3300400A DE 3300400 C2 DE3300400 C2 DE 3300400C2
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
thin film
silicon thin
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3300400A
Other languages
German (de)
English (en)
Other versions
DE3300400A1 (de
Inventor
Katsumi Tokio/Tokyo Jp Nakagawa
Toshiyuki Yokohama Kanagawa Jp Komatsu
Yutaka Tokio/Tokyo Jp Hirai
Yoshiyuki Yokosuka Kanagawa Jp Osada
Satoshi Omata
Takashi Tokio/Tokyo Jp Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57000809A external-priority patent/JPS58118162A/ja
Priority claimed from JP57000807A external-priority patent/JPH0618268B2/ja
Priority claimed from JP57000808A external-priority patent/JPS58118161A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3300400A1 publication Critical patent/DE3300400A1/de
Application granted granted Critical
Publication of DE3300400C2 publication Critical patent/DE3300400C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE19833300400 1982-01-06 1983-01-07 Halbleiterbauelement Granted DE3300400A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57000809A JPS58118162A (ja) 1982-01-06 1982-01-06 半導体素子
JP57000807A JPH0618268B2 (ja) 1982-01-06 1982-01-06 半導体素子
JP57000808A JPS58118161A (ja) 1982-01-06 1982-01-06 半導体素子

Publications (2)

Publication Number Publication Date
DE3300400A1 DE3300400A1 (de) 1983-07-14
DE3300400C2 true DE3300400C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-10-19

Family

ID=27274613

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3347997A Expired - Lifetime DE3347997C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-01-06 1983-01-07
DE19833300400 Granted DE3300400A1 (de) 1982-01-06 1983-01-07 Halbleiterbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3347997A Expired - Lifetime DE3347997C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-01-06 1983-01-07

Country Status (2)

Country Link
US (1) US4719501A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3347997C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241959A1 (de) * 1981-11-13 1983-05-26 Canon K.K., Tokyo Halbleiterbauelement
JPH0628313B2 (ja) * 1982-01-19 1994-04-13 キヤノン株式会社 半導体素子
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
JP2560716B2 (ja) * 1987-03-25 1996-12-04 株式会社日本自動車部品総合研究所 半導体素子及びその製造方法
US4946514A (en) * 1987-03-27 1990-08-07 Canon Kabushiki Kaisha Thin film photoelectromotive force element having multi-thin films stacked semiconductor layer
US5019887A (en) * 1987-03-27 1991-05-28 Canon Kabushiki Kaisha Non-single crystalline photosensor with hydrogen and halogen
JPH0752778B2 (ja) * 1987-09-14 1995-06-05 三洋電機株式会社 光起電力装置
JPH0388321A (ja) * 1989-08-31 1991-04-12 Tonen Corp 多結晶シリコン薄膜
EP0492915B1 (en) * 1990-12-17 1996-09-04 Canon Kabushiki Kaisha Cantilever probe and apparatus using the same
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
WO1993019022A1 (fr) * 1992-03-25 1993-09-30 Kanegafuchi Chemical Industry Co., Ltd. Couche mince de polysilicium et sa fabrication
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
ZA956036B (en) * 1994-08-02 1996-02-23 Boc Group Inc Sputtering silicon dielectric films with noble gas mixtures
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6103138A (en) * 1998-01-21 2000-08-15 Canon Kabushiki Kaisha Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device
AUPP699798A0 (en) 1998-11-06 1998-12-03 Pacific Solar Pty Limited Thin films with light trapping
EP1032052B1 (en) * 1999-02-26 2010-07-21 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
JP3589581B2 (ja) 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
US6991999B2 (en) * 2001-09-07 2006-01-31 Applied Materials, Inc. Bi-layer silicon film and method of fabrication
US6730900B2 (en) * 2002-02-05 2004-05-04 E-Phocus, Inc. Camera with MOS or CMOS sensor array
US7593154B2 (en) * 2005-10-11 2009-09-22 Sage Electrochromics, Inc. Electrochromic devices having improved ion conducting layers
FR2948356B1 (fr) 2009-07-22 2011-08-19 Saint Gobain Dispositif electrochrome
JP2011077184A (ja) * 2009-09-29 2011-04-14 Fujifilm Corp 検出素子
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828731B2 (ja) * 1973-12-28 1983-06-17 テキサス インストルメンツ インコ−ポレ−テツド ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ
FR2354827A1 (fr) * 1976-06-16 1978-01-13 Mecasonic Sa Dispositif producteur d'ultra-sons utilisable notamment dans l'industrie des matieres thermoplastiques
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
DE2951915A1 (de) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Integrierbare halbleiterspeicherzelle
US4425379A (en) * 1981-02-11 1984-01-10 Fairchild Camera & Instrument Corporation Polycrystalline silicon Schottky diode array
US4434318A (en) * 1981-03-25 1984-02-28 Sera Solar Corporation Solar cells and method
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
JPH0620122B2 (ja) * 1982-01-19 1994-03-16 キヤノン株式会社 半導体素子

Also Published As

Publication number Publication date
DE3347997C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-24
DE3300400A1 (de) 1983-07-14
US4719501A (en) 1988-01-12

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