DE3215151A1 - Photoleitfaehiges element - Google Patents
Photoleitfaehiges elementInfo
- Publication number
- DE3215151A1 DE3215151A1 DE3215151A DE3215151A DE3215151A1 DE 3215151 A1 DE3215151 A1 DE 3215151A1 DE 3215151 A DE3215151 A DE 3215151A DE 3215151 A DE3215151 A DE 3215151A DE 3215151 A1 DE3215151 A1 DE 3215151A1
- Authority
- DE
- Germany
- Prior art keywords
- photo
- conductive element
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08235—Silicon-based comprising three or four silicon-based layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56062182A JPS57177156A (en) | 1981-04-24 | 1981-04-24 | Photoconductive material |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3215151A1 true DE3215151A1 (de) | 1982-11-11 |
DE3215151C2 DE3215151C2 (US20080293856A1-20081127-C00150.png) | 1988-03-17 |
Family
ID=13192728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3215151A Granted DE3215151A1 (de) | 1981-04-24 | 1982-04-23 | Photoleitfaehiges element |
Country Status (6)
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3340568A1 (de) * | 1983-01-26 | 1984-07-26 | Tokyo Shibaura Denki K.K., Kawasaki | Halbleiteranordnung |
DE3443823A1 (de) * | 1983-12-01 | 1985-06-13 | Ricoh Co., Ltd., Tokio/Tokyo | Elektrophotographischer photoleiter |
DE3541764A1 (de) * | 1984-11-26 | 1986-06-05 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Photoleiterelement |
DE3621270A1 (de) * | 1985-06-25 | 1987-01-08 | Toshiba Kk | Lichtempfindliches elektrophotographisches aufzeichnungsmaterial |
DE3621269A1 (de) * | 1985-06-25 | 1987-01-08 | Toshiba Kk | Lichtempfindliches elektrophotographisches aufzeichnungsmaterial |
DE3701488A1 (de) * | 1986-02-26 | 1987-08-27 | Toshiba Kawasaki Kk | Elektrophotographisches lichtempfindliches element |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8204056A (nl) * | 1982-10-21 | 1984-05-16 | Oce Nederland Bv | Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen. |
JPH0616178B2 (ja) * | 1983-07-19 | 1994-03-02 | 株式会社東芝 | 光導電部材 |
US4666808A (en) * | 1983-04-01 | 1987-05-19 | Kyocera Corp. | Amorphous silicon electrophotographic sensitive member |
JPS59184360A (ja) * | 1983-04-04 | 1984-10-19 | Fuji Photo Film Co Ltd | 電子写真用感光体 |
JPS59193463A (ja) * | 1983-04-18 | 1984-11-02 | Canon Inc | 電子写真用光導電部材 |
JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
JPS59204048A (ja) * | 1983-05-06 | 1984-11-19 | Kyocera Corp | 電子写真感光体 |
DE3420741C2 (de) * | 1983-06-02 | 1996-03-28 | Minolta Camera Kk | Elektrophotographisches Aufzeichnungsmaterial |
US4513073A (en) * | 1983-08-18 | 1985-04-23 | Minnesota Mining And Manufacturing Company | Layered photoconductive element |
US4659639A (en) * | 1983-09-22 | 1987-04-21 | Minolta Camera Kabushiki Kaisha | Photosensitive member with an amorphous silicon-containing insulating layer |
JPS6091360A (ja) * | 1983-10-25 | 1985-05-22 | Kyocera Corp | 光導電部材 |
US4544617A (en) * | 1983-11-02 | 1985-10-01 | Xerox Corporation | Electrophotographic devices containing overcoated amorphous silicon compositions |
JPS60104955A (ja) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | 電子写真像形成部材 |
JPS60104954A (ja) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | 電子写真像形成部材 |
JPS60125846A (ja) * | 1983-12-09 | 1985-07-05 | Hitachi Koki Co Ltd | 電子写真像形成部材 |
JPH067270B2 (ja) * | 1983-12-16 | 1994-01-26 | 株式会社日立製作所 | 電子写真用感光体 |
JPS60146251A (ja) * | 1984-01-10 | 1985-08-01 | Sharp Corp | 電子写真用感光体の製造方法 |
EP0151754B1 (en) * | 1984-02-14 | 1991-12-18 | Energy Conversion Devices, Inc. | An improved method of making a photoconductive member |
US4540647A (en) * | 1984-08-20 | 1985-09-10 | Eastman Kodak Company | Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range |
CA1249476A (en) * | 1984-08-20 | 1989-01-31 | Paul M. Borsenberger | Low field electrophotographic process |
US4619877A (en) * | 1984-08-20 | 1986-10-28 | Eastman Kodak Company | Low field electrophotographic process |
US4613556A (en) * | 1984-10-18 | 1986-09-23 | Xerox Corporation | Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide |
US4721663A (en) * | 1985-08-26 | 1988-01-26 | Energy Conversion Devices, Inc. | Enhancement layer for negatively charged electrophotographic devices |
US4713309A (en) * | 1985-08-26 | 1987-12-15 | Energy Conversion Devices, Inc. | Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer |
US4663258A (en) * | 1985-09-30 | 1987-05-05 | Xerox Corporation | Overcoated amorphous silicon imaging members |
JPH0785174B2 (ja) * | 1986-01-18 | 1995-09-13 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
JPS62258464A (ja) * | 1986-04-08 | 1987-11-10 | Canon Inc | 光受容部材 |
JPH07101317B2 (ja) * | 1986-11-17 | 1995-11-01 | 富士通株式会社 | アモルフアスシリコン電子写真感光体 |
US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
FR2631346B1 (fr) * | 1988-05-11 | 1994-05-20 | Air Liquide | Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications |
US4933246A (en) * | 1989-01-03 | 1990-06-12 | Xerox Corporation | Electrophotographic imaging member with a copolymer blocking layer |
JP3206916B2 (ja) * | 1990-11-28 | 2001-09-10 | 住友電気工業株式会社 | 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス |
EP2282234B1 (en) | 2008-05-21 | 2015-08-19 | Canon Kabushiki Kaisha | Electrophotographic photoreceptor for negative electrification, method for image formation, and electrophotographic apparatus |
DE102017001097A1 (de) * | 2017-02-07 | 2018-08-09 | Gentherm Gmbh | Elektrisch leitfähige Folie |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2746967A1 (de) * | 1977-10-19 | 1979-04-26 | Siemens Ag | Drucktrommel fuer elektrostatisches kopierverfahren |
DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
DE2933411A1 (de) * | 1978-08-18 | 1980-03-20 | Hitachi Ltd | Festkoerper-abbildungs-bauelement |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2018446B (en) * | 1978-03-03 | 1983-02-23 | Canon Kk | Image-forming member for electrophotography |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS564151A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
JPS574172A (en) * | 1980-06-09 | 1982-01-09 | Canon Inc | Light conductive member |
-
1981
- 1981-04-24 JP JP56062182A patent/JPS57177156A/ja active Granted
-
1982
- 1982-04-14 US US06/368,368 patent/US4443529A/en not_active Expired - Lifetime
- 1982-04-23 DE DE3215151A patent/DE3215151A1/de active Granted
- 1982-04-23 CA CA000401556A patent/CA1180220A/en not_active Expired
- 1982-04-23 GB GB8211797A patent/GB2099600B/en not_active Expired
- 1982-04-23 FR FR8207049A patent/FR2504697A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2746967A1 (de) * | 1977-10-19 | 1979-04-26 | Siemens Ag | Drucktrommel fuer elektrostatisches kopierverfahren |
DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
DE2933411A1 (de) * | 1978-08-18 | 1980-03-20 | Hitachi Ltd | Festkoerper-abbildungs-bauelement |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3340568A1 (de) * | 1983-01-26 | 1984-07-26 | Tokyo Shibaura Denki K.K., Kawasaki | Halbleiteranordnung |
DE3443823A1 (de) * | 1983-12-01 | 1985-06-13 | Ricoh Co., Ltd., Tokio/Tokyo | Elektrophotographischer photoleiter |
DE3541764A1 (de) * | 1984-11-26 | 1986-06-05 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Photoleiterelement |
US4716090A (en) * | 1984-11-26 | 1987-12-29 | Kabushiki Kaisha Toshiba | Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range |
US4724193A (en) * | 1984-11-26 | 1988-02-09 | Toshiba Kk | Photoconductive membrane for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range |
DE3621270A1 (de) * | 1985-06-25 | 1987-01-08 | Toshiba Kk | Lichtempfindliches elektrophotographisches aufzeichnungsmaterial |
DE3621269A1 (de) * | 1985-06-25 | 1987-01-08 | Toshiba Kk | Lichtempfindliches elektrophotographisches aufzeichnungsmaterial |
US4717637A (en) * | 1985-06-25 | 1988-01-05 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member using microcrystalline silicon |
DE3701488A1 (de) * | 1986-02-26 | 1987-08-27 | Toshiba Kawasaki Kk | Elektrophotographisches lichtempfindliches element |
Also Published As
Publication number | Publication date |
---|---|
JPH0150904B2 (US20080293856A1-20081127-C00150.png) | 1989-11-01 |
FR2504697A1 (fr) | 1982-10-29 |
DE3215151C2 (US20080293856A1-20081127-C00150.png) | 1988-03-17 |
US4443529A (en) | 1984-04-17 |
CA1180220A (en) | 1985-01-02 |
GB2099600A (en) | 1982-12-08 |
FR2504697B1 (US20080293856A1-20081127-C00150.png) | 1985-03-15 |
GB2099600B (en) | 1984-12-12 |
JPS57177156A (en) | 1982-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition |