DE3200788C2 - - Google Patents

Info

Publication number
DE3200788C2
DE3200788C2 DE3200788A DE3200788A DE3200788C2 DE 3200788 C2 DE3200788 C2 DE 3200788C2 DE 3200788 A DE3200788 A DE 3200788A DE 3200788 A DE3200788 A DE 3200788A DE 3200788 C2 DE3200788 C2 DE 3200788C2
Authority
DE
Germany
Prior art keywords
layer
electrode
layers
aluminum
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3200788A
Other languages
German (de)
English (en)
Other versions
DE3200788A1 (de
Inventor
Katsumi Nara Jp Tsujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP449481A external-priority patent/JPS57117283A/ja
Priority claimed from JP449581A external-priority patent/JPS57117284A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3200788A1 publication Critical patent/DE3200788A1/de
Application granted granted Critical
Publication of DE3200788C2 publication Critical patent/DE3200788C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19823200788 1981-01-13 1982-01-13 Elektrode fuer halbleiterbauteile Granted DE3200788A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device
JP449581A JPS57117284A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Publications (2)

Publication Number Publication Date
DE3200788A1 DE3200788A1 (de) 1982-07-29
DE3200788C2 true DE3200788C2 (enExample) 1989-09-14

Family

ID=26338277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823200788 Granted DE3200788A1 (de) 1981-01-13 1982-01-13 Elektrode fuer halbleiterbauteile

Country Status (3)

Country Link
US (1) US4553154A (enExample)
DE (1) DE3200788A1 (enExample)
NL (1) NL186354C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19954319C1 (de) * 1999-11-11 2001-05-03 Vishay Semiconductor Gmbh Verfahren zum Herstellen von mehrschichtigen Kontaktelektroden für Verbindungshalbeiter und Anordnung
DE102004004780B4 (de) * 2003-01-31 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Bauelementes mit einem elektrischen Kontaktbereich und Bauelement mit einem elektrischen Kontaktbereich

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119867A (ja) * 1982-12-27 1984-07-11 Toshiba Corp 半導体装置
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
US5121174A (en) * 1987-10-23 1992-06-09 Vitesse Semiconductor Corporation Gate-to-ohmic metal contact scheme for III-V devices
FR2625585A1 (fr) * 1988-01-05 1989-07-07 Thomson Csf Panneau d'affichage point par point avec connecteur en or
DE3840410A1 (de) * 1988-11-30 1990-05-31 Fraunhofer Ges Forschung Integrierbare kondensatorstruktur
DE4129647B4 (de) * 1990-09-28 2009-02-12 Siemens Ag Vorderseiten-Metallisierung zum Drahtbonden für ein III-V Halbleiterbauelement und Verfahren
DE4129654B4 (de) * 1990-09-28 2004-11-25 Siemens Ag Rückseitenkontakt für einen Halbleiterkörper
DE59308636D1 (de) * 1992-08-28 1998-07-09 Siemens Ag Leuchtdiode
DE4401858C2 (de) * 1994-01-22 1996-07-18 Telefunken Microelectron Verfahren zur Herstellung eines ohmschen Kontaktes auf P-leitenden III-V-Verbindungshalbleiter
DE19537545A1 (de) 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute
JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
CA2316459A1 (en) * 1999-09-11 2001-03-11 Yves Tremblay Ccd wafers with titanium refractory metal
GB2354109B (en) * 1999-09-11 2004-07-14 Mitel Corp CCD Wafers with titanium refractory metal
JP2004235649A (ja) 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
CN102709409B (zh) * 2012-05-31 2015-06-03 东莞洲磊电子有限公司 一种四元系led芯片的切割方法
JP7344937B2 (ja) * 2021-07-30 2023-09-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032872B2 (de) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
US3923559A (en) * 1975-01-13 1975-12-02 Bell Telephone Labor Inc Use of trapped hydrogen for annealing metal-oxide-semiconductor devices
DE2613630C2 (de) * 1976-01-28 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Halbleiter-Lumineszenzdiode
JPS6034827B2 (ja) * 1977-06-28 1985-08-10 株式会社東芝 リン化ガリウム発光素子
JPS5439573A (en) * 1977-09-05 1979-03-27 Toshiba Corp Compound semiconductor device
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
DE3172935D1 (en) * 1980-02-28 1986-01-02 Toshiba Kk Iii - v group compound semiconductor light-emitting element and method of producing the same
EP0039174B1 (en) * 1980-04-17 1983-10-19 The Post Office Gold metallisation in semiconductor devices
US4316201A (en) * 1980-05-08 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Low-barrier-height epitaxial Ge-GaAs mixer diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19954319C1 (de) * 1999-11-11 2001-05-03 Vishay Semiconductor Gmbh Verfahren zum Herstellen von mehrschichtigen Kontaktelektroden für Verbindungshalbeiter und Anordnung
DE102004004780B4 (de) * 2003-01-31 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Bauelementes mit einem elektrischen Kontaktbereich und Bauelement mit einem elektrischen Kontaktbereich
DE102004004780B9 (de) * 2003-01-31 2019-04-25 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Bauelementes mit einem elektrischen Kontaktbereich und Bauelement mit einem elektrischen Kontaktbereich

Also Published As

Publication number Publication date
NL8200038A (nl) 1982-08-02
NL186354B (nl) 1990-06-01
DE3200788A1 (de) 1982-07-29
NL186354C (nl) 1990-11-01
US4553154A (en) 1985-11-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN