DE2826486A1 - Lichtemittierende halbleitervorrichtung und verfahren zu ihrer herstellung - Google Patents

Lichtemittierende halbleitervorrichtung und verfahren zu ihrer herstellung

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Publication number
DE2826486A1
DE2826486A1 DE19782826486 DE2826486A DE2826486A1 DE 2826486 A1 DE2826486 A1 DE 2826486A1 DE 19782826486 DE19782826486 DE 19782826486 DE 2826486 A DE2826486 A DE 2826486A DE 2826486 A1 DE2826486 A1 DE 2826486A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
manufacture
light
process
semiconductor device
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782826486
Other languages
English (en)
Other versions
DE2826486C2 (de )
Inventor
Hiroyuki Kobayashi
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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    • HELECTRICITY
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/161Disposition
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    • H01L2224/481Disposition
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/4823Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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DE19782826486 1977-06-17 1978-06-16 Expired DE2826486C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7241777A JPS5649468B2 (de) 1977-06-17 1977-06-17

Publications (2)

Publication Number Publication Date
DE2826486A1 true true DE2826486A1 (de) 1979-01-25
DE2826486C2 DE2826486C2 (de) 1987-11-26

Family

ID=13488675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782826486 Expired DE2826486C2 (de) 1977-06-17 1978-06-16

Country Status (4)

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US (1) US4316208A (de)
JP (1) JPS5649468B2 (de)
CA (1) CA1112749A (de)
DE (1) DE2826486C2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035118A2 (de) * 1980-02-28 1981-09-09 Kabushiki Kaisha Toshiba Lichtemittierendes Halbleiterelement der III-V-Verbindung und Verfahren zu seiner Herstellung
EP0303272A2 (de) * 1987-08-14 1989-02-15 Siemens Aktiengesellschaft Leiterplatte für die Elektronik
EP1624496A1 (de) * 2003-04-30 2006-02-08 Zakrytoe Aksionernoe Obschestvo "Innovatsionnaya Firma "Tetis" Leuchtdiode
DE19901916B4 (de) * 1998-01-29 2012-08-16 Rohm Co. Ltd. Halbleitende lichtemittierende Vorrichtung

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476620A (en) * 1979-10-19 1984-10-16 Matsushita Electric Industrial Co., Ltd. Method of making a gallium nitride light-emitting diode
US4396929A (en) * 1979-10-19 1983-08-02 Matsushita Electric Industrial Company, Ltd. Gallium nitride light-emitting element and method of manufacturing the same
JPS5866198U (de) * 1981-10-30 1983-05-06
DE3208638C2 (de) * 1982-03-10 1992-06-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JPS58213491A (en) * 1982-06-07 1983-12-12 Omron Tateisi Electronics Co Semiconductor laser
JPS5954065U (de) * 1982-10-04 1984-04-09
KR890002811B1 (ko) * 1986-11-04 1989-07-31 강진구 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지
JP2588213B2 (ja) * 1987-09-30 1997-03-05 株式会社東芝 半導体発光素子およびその製造方法
JP3022565B2 (ja) * 1988-09-13 2000-03-21 株式会社日立製作所 半導体装置
US5220199A (en) * 1988-09-13 1993-06-15 Hitachi, Ltd. Semiconductor integrated circuit device in which a semiconductor chip is mounted with solder bumps for mounting to a wiring substrate
JPH03292779A (en) * 1990-04-10 1991-12-24 Matsushita Electric Ind Co Ltd Light emitting element and manufacture thereof
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5149958A (en) * 1990-12-12 1992-09-22 Eastman Kodak Company Optoelectronic device component package
JPH04103666U (de) * 1991-02-18 1992-09-07
JP2666228B2 (ja) * 1991-10-30 1997-10-22 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子
JP2796919B2 (ja) * 1992-05-11 1998-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション メタライゼーション複合体および半導体デバイス
DE69433926D1 (de) * 1993-04-28 2004-09-02 Nichia Corp Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US5472886A (en) * 1994-12-27 1995-12-05 At&T Corp. Structure of and method for manufacturing an LED
JP3228858B2 (ja) * 1995-10-17 2001-11-12 アルプス電気株式会社 発光ダイオード装置
JPH08250770A (ja) * 1995-12-28 1996-09-27 Nichia Chem Ind Ltd 発光デバイスの製造方法
US6235141B1 (en) 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
GB9709096D0 (en) * 1997-05-07 1997-06-25 Mitel Corp Laser sub-mount
US6107122A (en) * 1997-08-04 2000-08-22 Micron Technology, Inc. Direct die contact (DDC) semiconductor package
US20070110361A1 (en) * 2003-08-26 2007-05-17 Digital Optics Corporation Wafer level integration of multiple optical elements
JPH11220170A (ja) * 1998-01-29 1999-08-10 Rohm Co Ltd 発光ダイオード素子
US6331450B1 (en) * 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
US6888171B2 (en) * 2000-12-22 2005-05-03 Dallan Luming Science & Technology Group Co., Ltd. Light emitting diode
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2003086843A (ja) * 2001-09-14 2003-03-20 Sharp Corp 半導体発光素子及び半導体発光装置
US7417220B2 (en) 2004-09-09 2008-08-26 Toyoda Gosei Co., Ltd. Solid state device and light-emitting element
WO2006071806A3 (en) * 2004-12-27 2008-10-30 Quantum Paper Inc Addressable and printable emissive display
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8456392B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) * 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
KR100986440B1 (ko) * 2009-04-28 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5197654B2 (ja) * 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
JP6107060B2 (ja) * 2011-12-26 2017-04-05 日亜化学工業株式会社 発光装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242660A (en) * 1968-09-30 1971-08-11 Siemens Ag Improvements in or relating to luminescence diodes
US4017881A (en) * 1974-09-20 1977-04-12 Hitachi, Ltd. Light emitting semiconductor device and a method for making the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation
US3384793A (en) * 1965-03-10 1968-05-21 Matsushita Electronics Corp Semiconductor device with novel isolated diffused region arrangement
NL6708955A (de) * 1966-07-07 1968-01-08
US3517278A (en) * 1967-10-02 1970-06-23 Teledyne Inc Flip chip structure
US3593070A (en) * 1968-12-17 1971-07-13 Texas Instruments Inc Submount for semiconductor assembly
US3761782A (en) * 1971-05-19 1973-09-25 Signetics Corp Semiconductor structure, assembly and method
US3950233A (en) * 1973-07-30 1976-04-13 Signetics Corporation Method for fabricating a semiconductor structure
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1242660A (en) * 1968-09-30 1971-08-11 Siemens Ag Improvements in or relating to luminescence diodes
US4017881A (en) * 1974-09-20 1977-04-12 Hitachi, Ltd. Light emitting semiconductor device and a method for making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"IEEE J. Of Quantum Electronics" QE-11(1975)421-426 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035118A2 (de) * 1980-02-28 1981-09-09 Kabushiki Kaisha Toshiba Lichtemittierendes Halbleiterelement der III-V-Verbindung und Verfahren zu seiner Herstellung
EP0035118A3 (en) * 1980-02-28 1983-06-22 Tokyo Shibaura Denki Kabushiki Kaisha Iii - v group compound semiconductor light-emitting element and method of producing the same
EP0303272A2 (de) * 1987-08-14 1989-02-15 Siemens Aktiengesellschaft Leiterplatte für die Elektronik
EP0303272A3 (de) * 1987-08-14 1990-05-09 Siemens Aktiengesellschaft Leiterplatte für die Elektronik
DE19901916B4 (de) * 1998-01-29 2012-08-16 Rohm Co. Ltd. Halbleitende lichtemittierende Vorrichtung
EP1624496A1 (de) * 2003-04-30 2006-02-08 Zakrytoe Aksionernoe Obschestvo "Innovatsionnaya Firma "Tetis" Leuchtdiode
EP1624496A4 (de) * 2003-04-30 2007-11-14 Zakrytoe Aksionernoe Obschestv Leuchtdiode

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US4316208A (en) 1982-02-16 grant
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CA1112749A (en) 1981-11-17 grant
JPS5649468B2 (de) 1981-11-21 grant

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