NL186354C - Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode. - Google Patents

Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode.

Info

Publication number
NL186354C
NL186354C NLAANVRAGE8200038,A NL8200038A NL186354C NL 186354 C NL186354 C NL 186354C NL 8200038 A NL8200038 A NL 8200038A NL 186354 C NL186354 C NL 186354C
Authority
NL
Netherlands
Prior art keywords
connections
iii
semiconductor device
composite electrode
composite
Prior art date
Application number
NLAANVRAGE8200038,A
Other languages
English (en)
Dutch (nl)
Other versions
NL186354B (nl
NL8200038A (nl
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP449581A external-priority patent/JPS57117284A/ja
Priority claimed from JP449481A external-priority patent/JPS57117283A/ja
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of NL8200038A publication Critical patent/NL8200038A/nl
Publication of NL186354B publication Critical patent/NL186354B/xx
Application granted granted Critical
Publication of NL186354C publication Critical patent/NL186354C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
NLAANVRAGE8200038,A 1981-01-13 1982-01-07 Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode. NL186354C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP449581 1981-01-13
JP449481 1981-01-13
JP449581A JPS57117284A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Publications (3)

Publication Number Publication Date
NL8200038A NL8200038A (nl) 1982-08-02
NL186354B NL186354B (nl) 1990-06-01
NL186354C true NL186354C (nl) 1990-11-01

Family

ID=26338277

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8200038,A NL186354C (nl) 1981-01-13 1982-01-07 Halfgeleiderinrichting die uit iii-v verbindingen bestaat, met een samengestelde elektrode.

Country Status (3)

Country Link
US (1) US4553154A (enExample)
DE (1) DE3200788A1 (enExample)
NL (1) NL186354C (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119867A (ja) * 1982-12-27 1984-07-11 Toshiba Corp 半導体装置
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
US5121174A (en) * 1987-10-23 1992-06-09 Vitesse Semiconductor Corporation Gate-to-ohmic metal contact scheme for III-V devices
FR2625585A1 (fr) * 1988-01-05 1989-07-07 Thomson Csf Panneau d'affichage point par point avec connecteur en or
DE3840410A1 (de) * 1988-11-30 1990-05-31 Fraunhofer Ges Forschung Integrierbare kondensatorstruktur
DE4129654B4 (de) * 1990-09-28 2004-11-25 Siemens Ag Rückseitenkontakt für einen Halbleiterkörper
DE4129647B4 (de) * 1990-09-28 2009-02-12 Siemens Ag Vorderseiten-Metallisierung zum Drahtbonden für ein III-V Halbleiterbauelement und Verfahren
DE59308636D1 (de) * 1992-08-28 1998-07-09 Siemens Ag Leuchtdiode
DE4401858C2 (de) * 1994-01-22 1996-07-18 Telefunken Microelectron Verfahren zur Herstellung eines ohmschen Kontaktes auf P-leitenden III-V-Verbindungshalbleiter
DE19537544A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lumineszenzdiode mit verbesserter Lichtausbeute
DE19537545A1 (de) 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
CA2316459A1 (en) * 1999-09-11 2001-03-11 Yves Tremblay Ccd wafers with titanium refractory metal
GB2354109B (en) * 1999-09-11 2004-07-14 Mitel Corp CCD Wafers with titanium refractory metal
DE19954319C1 (de) * 1999-11-11 2001-05-03 Vishay Semiconductor Gmbh Verfahren zum Herstellen von mehrschichtigen Kontaktelektroden für Verbindungshalbeiter und Anordnung
DE102004004780B9 (de) * 2003-01-31 2019-04-25 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Bauelementes mit einem elektrischen Kontaktbereich und Bauelement mit einem elektrischen Kontaktbereich
JP2004235649A (ja) 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール
CN102709409B (zh) * 2012-05-31 2015-06-03 东莞洲磊电子有限公司 一种四元系led芯片的切割方法
JP7344937B2 (ja) * 2021-07-30 2023-09-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032872B2 (de) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen weichlötfähiger Kontakte zum Einbau von Halbleiterbauelementen in Gehäuse
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
US3923559A (en) * 1975-01-13 1975-12-02 Bell Telephone Labor Inc Use of trapped hydrogen for annealing metal-oxide-semiconductor devices
DE2613630C2 (de) * 1976-01-28 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Halbleiter-Lumineszenzdiode
JPS6034827B2 (ja) * 1977-06-28 1985-08-10 株式会社東芝 リン化ガリウム発光素子
JPS5439573A (en) * 1977-09-05 1979-03-27 Toshiba Corp Compound semiconductor device
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
EP0035118B1 (en) * 1980-02-28 1985-11-21 Kabushiki Kaisha Toshiba Iii - v group compound semiconductor light-emitting element and method of producing the same
EP0039174B1 (en) * 1980-04-17 1983-10-19 The Post Office Gold metallisation in semiconductor devices
US4316201A (en) * 1980-05-08 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Low-barrier-height epitaxial Ge-GaAs mixer diode

Also Published As

Publication number Publication date
US4553154A (en) 1985-11-12
NL186354B (nl) 1990-06-01
DE3200788C2 (enExample) 1989-09-14
NL8200038A (nl) 1982-08-02
DE3200788A1 (de) 1982-07-29

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

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