DE3381607D1 - Photoelektrischer umwandler mit halbleiter. - Google Patents

Photoelektrischer umwandler mit halbleiter.

Info

Publication number
DE3381607D1
DE3381607D1 DE8383902825T DE3381607T DE3381607D1 DE 3381607 D1 DE3381607 D1 DE 3381607D1 DE 8383902825 T DE8383902825 T DE 8383902825T DE 3381607 T DE3381607 T DE 3381607T DE 3381607 D1 DE3381607 D1 DE 3381607D1
Authority
DE
Germany
Prior art keywords
semiconductor
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383902825T
Other languages
English (en)
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3381607D1 publication Critical patent/DE3381607D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
DE8383902825T 1982-09-03 1983-09-02 Photoelektrischer umwandler mit halbleiter. Expired - Lifetime DE3381607D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57153429A JPS5943581A (ja) 1982-09-03 1982-09-03 半導体光電変換装置
PCT/JP1983/000295 WO1984001056A1 (en) 1982-09-03 1983-09-02 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
DE3381607D1 true DE3381607D1 (de) 1990-06-28

Family

ID=15562317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383902825T Expired - Lifetime DE3381607D1 (de) 1982-09-03 1983-09-02 Photoelektrischer umwandler mit halbleiter.

Country Status (5)

Country Link
US (1) US4613881A (de)
EP (1) EP0117874B1 (de)
JP (1) JPS5943581A (de)
DE (1) DE3381607D1 (de)
WO (1) WO1984001056A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59107688A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59188277A (ja) * 1983-04-08 1984-10-25 Hamamatsu Photonics Kk 半導体撮像装置
JPS60143668A (ja) * 1983-12-29 1985-07-29 Res Dev Corp Of Japan カラ−用イメ−ジセンサ
JPH0828526B2 (ja) * 1985-10-14 1996-03-21 新技術事業団 半導体光電変換装置の製造方法
JPH0641665B2 (ja) * 1986-06-09 1994-06-01 東レ株式会社 布帛の擦過処理方法および擦過処理装置
US5331164A (en) * 1991-03-19 1994-07-19 California Institute Of Technology Particle sensor array
US6992322B2 (en) * 2001-01-02 2006-01-31 Kavassery Sureswaran Narayan Photo-responsive organic field effect transistor
WO2004070849A1 (de) * 2003-02-06 2004-08-19 Siemens Aktiengesellschaft Sperrschicht-feldeffekttransistor
CN2788876Y (zh) * 2005-05-10 2006-06-21 张逸夫 模拟花开动作的仿真玩具花
WO2007094493A1 (ja) * 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
JPS6020910B2 (ja) * 1977-07-07 1985-05-24 財団法人半導体研究振興会 静電誘導トランジスタ及び半導体集積回路
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
US4326210A (en) * 1977-09-26 1982-04-20 Sharp Kabushiki Kaisha Light-responsive field effect mode semiconductor devices
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
JPS56107583A (en) * 1980-01-30 1981-08-26 Matsushita Electric Ind Co Ltd Field effect transistor
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
US4422087A (en) * 1980-06-03 1983-12-20 Xerox Corporation Self-aligned short channel MESFET
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置

Also Published As

Publication number Publication date
EP0117874A4 (de) 1987-01-20
US4613881A (en) 1986-09-23
JPS5943581A (ja) 1984-03-10
JPS6259902B2 (de) 1987-12-14
EP0117874A1 (de) 1984-09-12
WO1984001056A1 (en) 1984-03-15
EP0117874B1 (de) 1990-05-23

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Legal Events

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8364 No opposition during term of opposition