NL192900B - Foto-elektrische halfgeleideromzetter. - Google Patents

Foto-elektrische halfgeleideromzetter.

Info

Publication number
NL192900B
NL192900B NL8304254A NL8304254A NL192900B NL 192900 B NL192900 B NL 192900B NL 8304254 A NL8304254 A NL 8304254A NL 8304254 A NL8304254 A NL 8304254A NL 192900 B NL192900 B NL 192900B
Authority
NL
Netherlands
Prior art keywords
photoelectric semiconductor
semiconductor converter
converter
photoelectric
semiconductor
Prior art date
Application number
NL8304254A
Other languages
English (en)
Other versions
NL8304254A (nl
NL192900C (nl
Original Assignee
Nishizawa Junichi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nishizawa Junichi filed Critical Nishizawa Junichi
Publication of NL8304254A publication Critical patent/NL8304254A/nl
Publication of NL192900B publication Critical patent/NL192900B/nl
Application granted granted Critical
Publication of NL192900C publication Critical patent/NL192900C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NL8304254A 1982-12-11 1983-12-09 Foto-elektrische halfgeleideromzetter. NL192900C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21752782 1982-12-11
JP57217527A JPS59107578A (ja) 1982-12-11 1982-12-11 半導体光電変換装置

Publications (3)

Publication Number Publication Date
NL8304254A NL8304254A (nl) 1984-07-02
NL192900B true NL192900B (nl) 1997-12-01
NL192900C NL192900C (nl) 1998-04-02

Family

ID=16705636

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8304254A NL192900C (nl) 1982-12-11 1983-12-09 Foto-elektrische halfgeleideromzetter.

Country Status (4)

Country Link
US (1) US4651180A (nl)
JP (1) JPS59107578A (nl)
DE (1) DE3344637C2 (nl)
NL (1) NL192900C (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108372A (ja) * 1982-12-13 1984-06-22 Fuji Photo Film Co Ltd 半導体光検出装置及びその製造方法
JPH0666446B2 (ja) * 1984-03-29 1994-08-24 オリンパス光学工業株式会社 固体撮像素子
GB2176935B (en) * 1985-06-21 1988-11-23 Stc Plc Photoconductor
JPH0828526B2 (ja) * 1985-10-14 1996-03-21 新技術事業団 半導体光電変換装置の製造方法
JP2504504B2 (ja) * 1988-01-29 1996-06-05 財団法人半導体研究振興会 光電変換装置
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
WO1991011399A1 (en) * 1990-01-31 1991-08-08 Bando Kiko Co., Ltd. Machine for working glass plate
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
JPH05328225A (ja) * 1992-05-15 1993-12-10 Sony Corp 増幅型固体撮像装置
JPH08204191A (ja) * 1995-01-20 1996-08-09 Sony Corp 電界効果トランジスタ及びその製造方法
US6410970B1 (en) * 2000-03-22 2002-06-25 Ophir Rf, Inc. Semiconductor device having a P-N junction with a photosensitive region
US6359324B1 (en) * 2000-03-22 2002-03-19 Ophir Rf, Inc. Push-pull configurations for semiconductor device having a pn-junction with a photosensitive region
FR2852147B1 (fr) 2003-03-06 2005-09-30 Commissariat Energie Atomique Matrice de pixels detecteurs integree sur circuit de lecture de charges
WO2007094493A1 (ja) * 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
US7700975B2 (en) * 2006-03-31 2010-04-20 Intel Corporation Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
US20070235877A1 (en) * 2006-03-31 2007-10-11 Miriam Reshotko Integration scheme for semiconductor photodetectors on an integrated circuit chip
US20080001181A1 (en) * 2006-06-28 2008-01-03 Titash Rakshit Complementarily doped metal-semiconductor interfaces to reduce dark current in MSM photodetectors
TW200837965A (en) * 2007-03-05 2008-09-16 Univ Nat Taiwan Photodetector
EP2417832B1 (en) * 2009-04-09 2015-02-25 Koninklijke Philips N.V. Intelligent lighting control system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
US4326210A (en) * 1977-09-26 1982-04-20 Sharp Kabushiki Kaisha Light-responsive field effect mode semiconductor devices
JPS5513924A (en) * 1978-07-14 1980-01-31 Semiconductor Res Found Semiconductor photoelectronic conversion device
US4427990A (en) * 1978-07-14 1984-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor photo-electric converter with insulated gate over p-n charge storage region
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置
JPS5943581A (ja) * 1982-09-03 1984-03-10 Junichi Nishizawa 半導体光電変換装置

Also Published As

Publication number Publication date
DE3344637C2 (de) 1994-03-03
JPS6329425B2 (nl) 1988-06-14
NL8304254A (nl) 1984-07-02
JPS59107578A (ja) 1984-06-21
DE3344637A1 (de) 1984-06-14
NL192900C (nl) 1998-04-02
US4651180A (en) 1987-03-17

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20031209